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FREESCALE MRF6S20010GNR1
- Part Number:
- MRF6S20010GNR1
- Manufacturer:
- FREESCALE
- Ventron No:
- 5418436-MRF6S20010GNR1
- Description:
- RF Power Field Effect Transistors
- ECAD Model:
-
- Datasheet:
- MRF6S20010GNR1
part No. MRF6S20010GNR1 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
MRF6S20010GNR1 More Descriptions
RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1731
GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, FM2NXP Semiconductors SCT
Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270G T/R
MRF6S20010 Series 28 V 2170 MHz RF Power Field Effect Transistor - TO-270G-2
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA
MOSFET RF N-CH 28V 10W TO2702 GW
RF MOSFET Transistors HV6 2GHZ 10W
RF MOSFET LDMOS 28V TO270-2 GULL
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G
RF S BAND, N-CHANNEL POWER MOSFE
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of
GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, FM2NXP Semiconductors SCT
Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270G T/R
MRF6S20010 Series 28 V 2170 MHz RF Power Field Effect Transistor - TO-270G-2
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA
MOSFET RF N-CH 28V 10W TO2702 GW
RF MOSFET Transistors HV6 2GHZ 10W
RF MOSFET LDMOS 28V TO270-2 GULL
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G
RF S BAND, N-CHANNEL POWER MOSFE
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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