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FREESCALE MRF6P24190HR6
- Part Number:
- MRF6P24190HR6
- Manufacturer:
- FREESCALE
- Ventron No:
- 5413747-MRF6P24190HR6
- Description:
- RF Power Field Effect Transistor
- ECAD Model:
-
- Datasheet:
- MRF6P24190H Series
We can supply Freescale Semiconductor, Inc. (NXP Semiconductors) MRF6P24190HR6, use the request quote form to request MRF6P24190HR6 pirce, Freescale Semiconductor, Inc. (NXP Semiconductors) Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MRF6P24190HR6.The price and lead time for MRF6P24190HR6 depending on the quantity required, availability and warehouse location.
MRF6P24190HR6 More Descriptions
CW Lateral N-Channel RF Power MOSFET, 2450 MHz, 190 W, 28 V
RF Power Transistor, 2.4 to 2.5 GHz, 190 W, Typ Gain in dB is 13.2 @ 2450 MHz, 28 V, SOT1787-1, LDMOS
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:68V; Continuous Drain Current, Id:10µA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:2V; Package/Case:Case 375D ;RoHS Compliant: Yes
RF Power Transistor, 2.4 to 2.5 GHz, 190 W, Typ Gain in dB is 13.2 @ 2450 MHz, 28 V, SOT1787-1, LDMOS
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:68V; Continuous Drain Current, Id:10µA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:2V; Package/Case:Case 375D ;RoHS Compliant: Yes
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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