ON Semiconductor MPSA20G
- Part Number:
- MPSA20G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465990-MPSA20G
- Description:
- TRANS NPN 40V 0.1A TO92
- ECAD Model:
-
- Datasheet:
- MPSA20G
ON Semiconductor MPSA20G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA20G.
- Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Frequency125MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMPSA20
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.5W
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product125MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 5mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage250mV
- Collector Base Voltage (VCBO)4V
- Emitter Base Voltage (VEBO)4V
- hFE Min40
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MPSA20G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5mA 10V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 125MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
MPSA20G Features
the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
a transition frequency of 125MHz
MPSA20G Applications
There are a lot of ON Semiconductor
MPSA20G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5mA 10V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 125MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
MPSA20G Features
the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
a transition frequency of 125MHz
MPSA20G Applications
There are a lot of ON Semiconductor
MPSA20G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA20G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Transistor, Bipolar,Si,NPN,Amplifier,VCEO 40VDC,IC 100mA,PD 1.5W,TO-92,VCBO 4VDC | ON Semiconductor MPSA20G
Trans GP BJT NPN 40V 0.1A 3-Pin TO-92 Bulk
RF Bipolar Transistor; Transistor Polarity:N Channel; Package/Case:TO-92; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):40; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; C-E Breakdown Voltage:40V ;RoHS Compliant: Yes
Transistor, Bipolar,Si,NPN,Amplifier,VCEO 40VDC,IC 100mA,PD 1.5W,TO-92,VCBO 4VDC | ON Semiconductor MPSA20G
Trans GP BJT NPN 40V 0.1A 3-Pin TO-92 Bulk
RF Bipolar Transistor; Transistor Polarity:N Channel; Package/Case:TO-92; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):40; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; C-E Breakdown Voltage:40V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MPSA20G.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):PolarityView Compare
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MPSA20GOBSOLETE (Last Updated: 1 day ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3SILICON-55°C~150°C TJBulk2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other Transistors40V625mWBOTTOM260100mA125MHz40MPSA203Not Qualified1Single1.5WAMPLIFIER125MHzNPNNPN40V100mA40 @ 5mA 10V100nA ICBO250mV @ 1mA, 10mA40V125MHz250mV4V4V40RoHS CompliantLead Free---------------- -
------------------------------------------------100V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWOriginal-Reel®TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-55°C ~ 150°C (TJ)Through Hole125MHz10000 @ 100mA, 5V500nA800mA-
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OBSOLETE (Last Updated: 2 weeks ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3SILICON-55°C~150°C TJBulk2002e1yesObsolete1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)-Other Transistors20V625mWBOTTOMNOT SPECIFIED--NOT SPECIFIEDMPSA123Not Qualified1Single625mW---NPN - Darlington20V100nA20000 @ 10mA 5V100nA ICBO1V @ 10μA, 10mA20V-1V-10V20000RoHS CompliantLead Free--------------NPN
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LAST SHIPMENTS (Last Updated: 1 week ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3SILICON-55°C~150°C TJTape & Reel (TR)2002e1yesObsolete1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)-Other Transistors20V625mWBOTTOMNOT SPECIFIED--NOT SPECIFIEDMPSA123Not Qualified1Single625mW---NPN - Darlington20V100nA20000 @ 10mA 5V100nA ICBO1V @ 10μA, 10mA20V-1V-10V20000RoHS CompliantLead Free--------------NPN
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