ON Semiconductor MMUN2113LT1G
- Part Number:
- MMUN2113LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2471111-MMUN2113LT1G
- Description:
- TRANS PREBIAS PNP 0.4W SOT23-3
- Datasheet:
- MMUN2113LT1G
ON Semiconductor MMUN2113LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2113LT1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO 1
- HTS Code8541.21.00.95
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC-50V
- Max Power Dissipation246mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMUN21**L
- Pin Count3
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation246mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)47 k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47 k Ω
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMUN2213LT1G Description
The ON Semiconductor MMUN2213LT1G is an NPN digital transistor in 3 pin SOT-23 (TO?236) package. The digital transistor is designed to replace a single device and its external resistor bias network.
MMUN2213LT1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
MMUN2213LT1G Applications
Portable Devices
Consumer Electronics
Industrial
Power Management
The ON Semiconductor MMUN2213LT1G is an NPN digital transistor in 3 pin SOT-23 (TO?236) package. The digital transistor is designed to replace a single device and its external resistor bias network.
MMUN2213LT1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
MMUN2213LT1G Applications
Portable Devices
Consumer Electronics
Industrial
Power Management
MMUN2113LT1G More Descriptions
MMUN Series 50 V 100 mA 47 kOhm PNP Silicon Bias Resistor Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MMUN2113LT1G PNP Digi Transistor; 100mA50 V 47 kOhm; Ratio Of 1; 3-Pin SOT-23
Trans Digital BJT PNP 50V 100mA 300mW Automotive 3-Pin SOT-23 T/R
PNP Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50Vdc, 47K/47K, Sot-23; Transistor Polarity:Single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:47Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMUN2113LT1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MMUN2113LT1G PNP Digi Transistor; 100mA50 V 47 kOhm; Ratio Of 1; 3-Pin SOT-23
Trans Digital BJT PNP 50V 100mA 300mW Automotive 3-Pin SOT-23 T/R
PNP Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50Vdc, 47K/47K, Sot-23; Transistor Polarity:Single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:47Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMUN2113LT1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.
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