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MMDF3N04HDR2

ON Semiconductor MMDF3N04HDR2

Part Number:
MMDF3N04HDR2
Manufacturer:
ON Semiconductor
Ventron No:
2477721-MMDF3N04HDR2
Description:
MOSFET 2N-CH 40V 3.4A 8-SOIC
ECAD Model:
Datasheet:
MMDF3N04HDR2

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Specifications
ON Semiconductor MMDF3N04HDR2 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMDF3N04HDR2.
  • Lifecycle Status
    OBSOLETE (Last Updated: 2 weeks ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Packaging
    Cut Tape (CT)
  • Published
    2006
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    40V
  • Max Power Dissipation
    1.39W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    3A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MMDF3N04HD
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    80m Ω @ 3.4A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    900pF @ 32V
  • Current - Continuous Drain (Id) @ 25°C
    3.4A
  • Gate Charge (Qg) (Max) @ Vgs
    28nC @ 10V
  • Rise Time
    15ns
  • Fall Time (Typ)
    19 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    3A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    3.4A
  • Drain to Source Breakdown Voltage
    40V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Feedback Cap-Max (Crss)
    96 pF
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MMDF3N04HDR2 Overview
This product is manufactured by ON Semiconductor and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet MMDF3N04HDR2 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDF3N04HDR2. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMDF3N04HDR2 More Descriptions
Power MOSFET 40V 3.4A 80 mOhm Dual N-Channel SO-8
MOSFETs- Power and Small Signal 40V 3A N-Channel No-Cancel/No-Return
Small Signal Field-Effect Transistor, 3.4A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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