Diodes Incorporated MMBTA42-7-F
- Part Number:
- MMBTA42-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3553893-MMBTA42-7-F
- Description:
- TRANS NPN 300V 0.5A SOT23-3
- Datasheet:
- MMBTA42
Diodes Incorporated MMBTA42-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBTA42-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA42
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min25
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current500mA
- Height1.1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA42-7-F More Descriptions
MMBTA42 Series NPN 300 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
Trans GP BJT NPN 300V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
300V 300mW 40@30mA,10V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS
MMBTA42-7-F,BIPOLAR TRANSISTOR NPN SOT-23 RING TERMINALSmall Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
Transistor NPN 300V 0.5A SOT23 | Diodes Inc MMBTA42-7-F
BIPOLAR TRANSISTOR NPN SOT-23 ROHS 3K
TRANSISTOR, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:40; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; Package / Case:SOT-23; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Small Signal
Trans GP BJT NPN 300V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
300V 300mW 40@30mA,10V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS
MMBTA42-7-F,BIPOLAR TRANSISTOR NPN SOT-23 RING TERMINAL
Transistor NPN 300V 0.5A SOT23 | Diodes Inc MMBTA42-7-F
BIPOLAR TRANSISTOR NPN SOT-23 ROHS 3K
TRANSISTOR, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:40; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; Package / Case:SOT-23; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Small Signal
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