ON Semiconductor MMBT4403LT1G
- Part Number:
- MMBT4403LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462822-MMBT4403LT1G
- Description:
- TRANS PNP 40V 0.6A SOT23
- Datasheet:
- MMBT4403LT1G
ON Semiconductor MMBT4403LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT4403LT1G.
- Lifecycle StatusACTIVE (Last Updated: 19 hours ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Voltage - Rated DC-40V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-600mA
- Frequency200MHz
- Base Part NumberMMBT4403
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-750mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Turn Off Time-Max (toff)255ns
- Collector-Base Capacitance-Max8.5pF
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT4403LT1G Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -750mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.In this part, there is a transition frequency of 200MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 600mA volts.
MMBT4403LT1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT4403LT1G Applications
There are a lot of ON Semiconductor
MMBT4403LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -750mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.In this part, there is a transition frequency of 200MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 600mA volts.
MMBT4403LT1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT4403LT1G Applications
There are a lot of ON Semiconductor
MMBT4403LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT4403LT1G More Descriptions
Transistor: PNP; bipolar; -40V; -0.6A; 225mW; -55 150 deg.C; SMD; SOT23
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Transistor, Bipolar, Si, PNP, Switching, VCEO -40VDC, IC -600mA, PD 225mW, SOT-23 | ON Semiconductor MMBT4403LT1G
TRANSISTOR, PNP, -40V, -600MA, SOT-23-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 225mW; DC Collector Current: -600mA; DC Current Gain hFE: 30hF
Rf Transistor, Pnp, -40V, 200Mhz, Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MMBT4403LT1G.
Trans GP BJT PNP 40V 0.6A 300mW Automotive 3-Pin SOT-23 T/R
40V 300mW 100@150mA,2V 600mA PNP SOT-23(TO-236) Bipolar Transistors - BJT ROHS
MMBT Series 40 V 600 mA Surface Mount PNP Silicon Switching Transistor - SOT-23
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Transistor, Bipolar, Si, PNP, Switching, VCEO -40VDC, IC -600mA, PD 225mW, SOT-23 | ON Semiconductor MMBT4403LT1G
TRANSISTOR, PNP, -40V, -600MA, SOT-23-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 225mW; DC Collector Current: -600mA; DC Current Gain hFE: 30hF
Rf Transistor, Pnp, -40V, 200Mhz, Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MMBT4403LT1G.
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