Fairchild/ON Semiconductor MMBT2369

Name: MMBT2369
Brand: Fairchild/ON Semiconductor
SKU: 2845696-MMBT2369
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBT2369

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2845696-MMBT2369

Description:: TRANS NPN 15V 0.2A SOT23

ECAD Model:

Datasheet:: MMBT2369

Specifications

Fairchild/ON Semiconductor MMBT2369 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT2369.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
15V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
200mA
Base Part Number
MMBT2369
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 1V
Current - Collector Cutoff (Max)
30μA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
15V
Transition Frequency
500MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
15V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
4.5V
hFE Min
40
Height
6.35mm
Length
6.35mm
Width
6.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

MMBT2369 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 1V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.In the part, the transition frequency is 500MHz.This device can take an input voltage of 15V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.

MMBT2369 Features
the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz

MMBT2369 Applications
There are a lot of ON Semiconductor
MMBT2369 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MMBT2369 More Descriptions

Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
MMBT2369 Series 15 V 200 mA NPN Surface Mount Switching Transistor - SOT-23-3
Trans GP BJT NPN 15V 0.2A 3-Pin SOT-23 T/R - Tape and Reel
Bipolar Transistors - BJT NPN HIGH SPD SW
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:15V; Power Dissipation, Pd:350mW; DC Collector Current:200mA; DC Current Gain Max (hfe):40; Operating Temperature Range:-55°C to 150°C ;RoHS Compliant: Yes

Certification