Fairchild/ON Semiconductor MMBF5485

Name: MMBF5485
Brand: Fairchild/ON Semiconductor
SKU: 2474805-MMBF5485
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBF5485

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2474805-MMBF5485

Description:: JFET N-CH 25V 10MA SOT23

ECAD Model:

Datasheet:: MMBF5485

Part Pictures

Specifications

Fairchild/ON Semiconductor MMBF5485 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBF5485.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
42 Weeks
Mount
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
10mA
Frequency
400MHz
Base Part Number
MMBF5485
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
225mW
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
25V
Transistor Type
N-Channel JFET
Continuous Drain Current (ID)
10mA
Gate to Source Voltage (Vgs)
-25V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Noise Figure
4dB
Voltage - Test
15V
Feedback Cap-Max (Crss)
1 pF
Height
930μm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMBF5485 Description
RF power transistors with duty cycles between 1% and 12% that operate between 1200 MHz and 1400 MHz. These devices work well for pulsed applications. This development aims to improve switching performance, dv/dt rate, conduction loss, and avalanche energy. This item can be applied in a variety of circumstances and is meant for general use.

MMBF5485 Features
These assume a junction temperature of no more than 150 °C.
These limitations are true in a steady state. Consult ON Semiconductor before employing pulsed or low duty-cycle activities.

MMBF5485 Applications
Switching applications

MMBF5485 More Descriptions

MMBF5485 Series 25 V 10 mA Surface Mount N-Channel RF Amplifier - SOT-23-3
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

Product Comparison

The three parts on the right have similar specifications to MMBF5485.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Package / Case

Number of Pins

Weight

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Current Rating

Frequency

Base Part Number

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Transistor Application

Drain to Source Voltage (Vdss)

Transistor Type

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

FET Technology

Noise Figure

Voltage - Test

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Mounting Type

Transistor Element Material

Operating Temperature

Termination

Resistance

FET Type

Input Capacitance (Ciss) (Max) @ Vds

Breakdown Voltage

Drain to Source Resistance

Current - Drain (Idss) @ Vds (Vgs=0)

Voltage - Cutoff (VGS off) @ Id

Resistance - RDS(On)

Surface Mount

Voltage - Rated

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Operating Temperature (Max)

Polarity/Channel Type

Drain to Source Breakdown Voltage

Power Dissipation-Max (Abs)

Highest Frequency Band

Power Gain-Min (Gp)

View Compare
MMBF5485

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

42 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

150°C

-55°C

8541.21.00.95

Other Transistors

25V

225mW

DUAL

GULL WING

10mA

400MHz

MMBF5485

1

Single

DEPLETION MODE

225mW

AMPLIFIER

25V

N-Channel JFET

10mA

-25V

METAL-OXIDE SEMICONDUCTOR

4dB

15V

1 pF

930μm

2.92mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMBF4391

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

14 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

Tape & Reel (TR)

2000

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

-

-

8541.21.00.95

Other Transistors

30V

350mW

DUAL

GULL WING

50mA

-

MBF4391

1

Single

DEPLETION MODE

350mW

SWITCHING

30V

-

150mA

-30V

JUNCTION

-

-

-

930μm

2.92mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

Surface Mount

SILICON

-55°C~150°C TJ

SMD/SMT

30Ohm

N-Channel

14pF @ 20V

-30V

30Ohm

50mA @ 20V

4V @ 1nA

30Ohm

-

-

-

-

-

-

-

-

-

-

-

-

-

MMBF5485 vs MMBF4391
MMBFJ270

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 13 hours ago)

42 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

Tape & Reel (TR)

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

-

-

-

8541.21.00.95

-

-30V

225mW

DUAL

GULL WING

-50mA

-

MBFJ270

1

Single

ENHANCEMENT MODE

225mW

SWITCHING

30V

-

-15mA

30V

METAL-OXIDE SEMICONDUCTOR

-

-

-

1.04mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

Surface Mount

SILICON

-55°C~150°C TJ

-

-

P-Channel

-

-

-

2mA @ 15V

500mV @ 1nA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MMBF5485 vs MMBFJ270
MMBF4416LT1

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

-

SOT-23-3

3

-

Cut Tape (CT)

2006

e0

no

Obsolete

1 (Unlimited)

3

-

Tin/Lead (Sn/Pb)

-

-

-

Other Transistors

30V

-

DUAL

GULL WING

10mA

-

-

1

Single

DEPLETION MODE

-

AMPLIFIER

30V

-

-

30V

JUNCTION

-

-

0.8 pF

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

SILICON

-

-

-

-

-

-

-

-

-

-

YES

30V

240

not_compliant

30

3

Not Qualified

150°C

N-CHANNEL

30V

0.225W

ULTRA HIGH FREQUENCY B

10dB

MMBF5485 vs MMBF4416LT1