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MMBD355LT1G

ON Semiconductor MMBD355LT1G

Part Number:
MMBD355LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2435456-MMBD355LT1G
Description:
DIODE SCHOTTKY DUAL CA 7V SOT-23
ECAD Model:
Datasheet:
MMBD355LT1G

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Specifications
ON Semiconductor MMBD355LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBD355LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    2 Weeks
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.10.00.60
  • Subcategory
    Microwave Mixer Diodes
  • Voltage - Rated DC
    7V
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    80mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBD355
  • Pin Count
    3
  • Number of Elements
    2
  • Power Dissipation-Max
    225mW
  • Element Configuration
    Common Anode
  • Diode Type
    Schottky - 1 Pair Common Anode
  • Halogen Free
    Halogen Free
  • Forward Voltage
    600mV
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    7V
  • Capacitance @ Vr, F
    1pF @ 0V 1MHz
  • Reverse Voltage
    7V
  • Frequency Band
    ULTRA HIGH FREQUENCY
  • Diode Capacitance-Max
    1pF
  • Height
    1.01mm
  • Length
    3.04mm
  • Width
    1.4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBD355LT1G Overview
A forward voltage of over 600mV is recommended for the system.This part has a current rating of 80mA.

MMBD355LT1G Features


MMBD355LT1G Applications
There are a lot of ON Semiconductor
MMBD355LT1G applications of RF diodes.


Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
MMBD355LT1G More Descriptions
7V 1 Pair Common Anode SOT-23-3 Schottky Barrier Diodes (SBD) ROHS
7.0 V Dual Common Anode Schottky Diode
DIODE SCHOTTKY 7V 225MW SOT23-3
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits.
Diode Configuration:Dual Series; Repetitive Peak Reverse Voltage:7V; Average Forward Current:-; Forward Voltage Max:600Mv; Reverse Recovery Time:-; Forward Surge Current:-; Operating Temperature Max:150°C; Diode Case Style:Sot-23 Rohs Compliant: Yes |Onsemi MMBD355LT1G.
Product Comparison
The three parts on the right have similar specifications to MMBD355LT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Package / Case
    Surface Mount
    Number of Pins
    Diode Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Voltage - Rated DC
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Diode Type
    Halogen Free
    Forward Voltage
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Capacitance @ Vr, F
    Reverse Voltage
    Frequency Band
    Diode Capacitance-Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Capacitance
    Power Dissipation
    Forward Current
    Reverse Recovery Time
    Max Forward Surge Current (Ifsm)
    REACH SVHC
    Output Current
    Polarity
    Number of Circuits
    View Compare
  • MMBD355LT1G
    MMBD355LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.10.00.60
    Microwave Mixer Diodes
    7V
    DUAL
    GULL WING
    260
    80mA
    40
    MMBD355
    3
    2
    225mW
    Common Anode
    Schottky - 1 Pair Common Anode
    Halogen Free
    600mV
    10μA
    7V
    1pF @ 0V 1MHz
    7V
    ULTRA HIGH FREQUENCY
    1pF
    1.01mm
    3.04mm
    1.4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBD353LT1G
    MMBD353LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    4 Weeks
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.10.00.60
    Microwave Mixer Diodes
    7V
    -
    GULL WING
    260
    80mA
    40
    MMBD353
    3
    2
    -
    Dual
    Schottky - 1 Pair Series Connection
    Halogen Free
    600mV
    10μA
    7V
    1pF @ 0V 1MHz
    7V
    ULTRA HIGH FREQUENCY
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    1pF
    225mW
    10mA
    5 ns
    600mA
    No SVHC
    -
    -
    -
    MMBD355LT1G vs MMBD353LT1G
  • MMBD301LT3G
    MMBD301LT3G
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~125°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.10.00.60
    Rectifier Diodes
    30V
    DUAL
    GULL WING
    260
    100mA
    40
    MMBD301
    3
    1
    -
    Single
    Schottky - Single
    Halogen Free
    600mV
    200nA
    30V
    1.5pF @ 15V 1MHz
    -
    ULTRA HIGH FREQUENCY
    1.5pF
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    200mW
    -
    -
    -
    -
    100mA
    -
    -
    MMBD355LT1G vs MMBD301LT3G
  • MMBD101LT1G
    MMBD101LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    2 Weeks
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    -
    Microwave Mixer Diodes
    7V
    DUAL
    GULL WING
    260
    225mA
    40
    MMBD101
    3
    1
    -
    Single
    Schottky - Single
    Halogen Free
    600mV
    250nA
    7V
    1pF @ 0V 1MHz
    -
    ULTRA HIGH FREQUENCY
    -
    1.01mm
    3.04mm
    1.4mm
    No
    ROHS3 Compliant
    Lead Free
    1pF
    225mW
    10mA
    -
    -
    No SVHC
    60mA
    Standard
    1
    MMBD355LT1G vs MMBD101LT1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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