ON Semiconductor MMBD353LT1G
- Part Number:
- MMBD353LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2830054-MMBD353LT1G
- Description:
- DIODE SWITCH DUAL 7V SOT23
- Datasheet:
- MMBD353LT1G
ON Semiconductor MMBD353LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBD353LT1G.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time4 Weeks
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Diode Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.10.00.60
- Capacitance1pF
- SubcategoryMicrowave Mixer Diodes
- Voltage - Rated DC7V
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating80mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBD353
- Pin Count3
- Number of Elements2
- Element ConfigurationDual
- Diode TypeSchottky - 1 Pair Series Connection
- Power Dissipation225mW
- Forward Current10mA
- Halogen FreeHalogen Free
- Forward Voltage600mV
- Reverse Recovery Time5 ns
- Peak Reverse Current10μA
- Max Repetitive Reverse Voltage (Vrrm)7V
- Capacitance @ Vr, F1pF @ 0V 1MHz
- Reverse Voltage7V
- Max Forward Surge Current (Ifsm)600mA
- Frequency BandULTRA HIGH FREQUENCY
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBD353LT1G Overview
A forward voltage higher than 600mV is recommended for systems.We are here referring to capacitance, which is 1pF in this case.Part rating is currently 80mA.
MMBD353LT1G Features
1pF capacitance
MMBD353LT1G Applications
There are a lot of ON Semiconductor
MMBD353LT1G applications of RF diodes.
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
UHF mixer
Sampling circuits
A forward voltage higher than 600mV is recommended for systems.We are here referring to capacitance, which is 1pF in this case.Part rating is currently 80mA.
MMBD353LT1G Features
1pF capacitance
MMBD353LT1G Applications
There are a lot of ON Semiconductor
MMBD353LT1G applications of RF diodes.
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
UHF mixer
Sampling circuits
MMBD353LT1G More Descriptions
MMBD353LT1G Series 7 V 10 uA SMT Dual Hot Carrier Mixer Diode - SOT-23-3
7.0 V Schottky Diode, dual, series reverse
DIODE SCHOTTKY 7V 225MW SOT23-3
Diode Switching 7V Automotive 3-Pin SOT-23 T/R
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits.
MIXER DIODE, SERIES, 0.01A, SOT-23; Diod; MIXER DIODE, SERIES, 0.01A, SOT-23; Diode Type:Schottky; Diode Configuration:Dual Pair Series; Repetitive Reverse Voltage Vrrm Max:7V; Forward Current If(AV):10mA; Forward Voltage VF Max:600mV; Reverse Recovery Time trr Max:5ns
7.0 V Schottky Diode, dual, series reverse
DIODE SCHOTTKY 7V 225MW SOT23-3
Diode Switching 7V Automotive 3-Pin SOT-23 T/R
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits.
MIXER DIODE, SERIES, 0.01A, SOT-23; Diod; MIXER DIODE, SERIES, 0.01A, SOT-23; Diode Type:Schottky; Diode Configuration:Dual Pair Series; Repetitive Reverse Voltage Vrrm Max:7V; Forward Current If(AV):10mA; Forward Voltage VF Max:600mV; Reverse Recovery Time trr Max:5ns
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