MMBD353LT1G

ON Semiconductor MMBD353LT1G

Part Number:
MMBD353LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2830054-MMBD353LT1G
Description:
DIODE SWITCH DUAL 7V SOT23
ECAD Model:
Datasheet:
MMBD353LT1G

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Specifications
ON Semiconductor MMBD353LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBD353LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    4 Weeks
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.10.00.60
  • Capacitance
    1pF
  • Subcategory
    Microwave Mixer Diodes
  • Voltage - Rated DC
    7V
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    80mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBD353
  • Pin Count
    3
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Diode Type
    Schottky - 1 Pair Series Connection
  • Power Dissipation
    225mW
  • Forward Current
    10mA
  • Halogen Free
    Halogen Free
  • Forward Voltage
    600mV
  • Reverse Recovery Time
    5 ns
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    7V
  • Capacitance @ Vr, F
    1pF @ 0V 1MHz
  • Reverse Voltage
    7V
  • Max Forward Surge Current (Ifsm)
    600mA
  • Frequency Band
    ULTRA HIGH FREQUENCY
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBD353LT1G Overview
A forward voltage higher than 600mV is recommended for systems.We are here referring to capacitance, which is 1pF in this case.Part rating is currently 80mA.

MMBD353LT1G Features
1pF capacitance


MMBD353LT1G Applications
There are a lot of ON Semiconductor
MMBD353LT1G applications of RF diodes.


RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
UHF mixer
Sampling circuits
MMBD353LT1G More Descriptions
MMBD353LT1G Series 7 V 10 uA SMT Dual Hot Carrier Mixer Diode - SOT-23-3
7.0 V Schottky Diode, dual, series reverse
DIODE SCHOTTKY 7V 225MW SOT23-3
Diode Switching 7V Automotive 3-Pin SOT-23 T/R
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits.
MIXER DIODE, SERIES, 0.01A, SOT-23; Diod; MIXER DIODE, SERIES, 0.01A, SOT-23; Diode Type:Schottky; Diode Configuration:Dual Pair Series; Repetitive Reverse Voltage Vrrm Max:7V; Forward Current If(AV):10mA; Forward Voltage VF Max:600mV; Reverse Recovery Time trr Max:5ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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