ON Semiconductor MJF127
- Part Number:
- MJF127
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466860-MJF127
- Description:
- TRANS PNP DARL 100V 5A TO220FP
- Datasheet:
- MJF127
ON Semiconductor MJF127 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF127.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- JESD-609 Codee0
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Additional FeatureUL RECOGNIZED
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Case ConnectionISOLATED
- Power - Max2W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 3A 3V
- Current - Collector Cutoff (Max)10μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic3.5V @ 20mA, 5A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)5A
- Transition Frequency4MHz
- RoHS StatusNon-RoHS Compliant
MJF127 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 3A 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 20mA, 5A.Parts of this part have transition frequencies of 4MHz.This device displays a 100V maximum voltage - Collector Emitter Breakdown.
MJF127 Features
the DC current gain for this device is 2000 @ 3A 3V
the vce saturation(Max) is 3.5V @ 20mA, 5A
a transition frequency of 4MHz
MJF127 Applications
There are a lot of Rochester Electronics, LLC
MJF127 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 3A 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 20mA, 5A.Parts of this part have transition frequencies of 4MHz.This device displays a 100V maximum voltage - Collector Emitter Breakdown.
MJF127 Features
the DC current gain for this device is 2000 @ 3A 3V
the vce saturation(Max) is 3.5V @ 20mA, 5A
a transition frequency of 4MHz
MJF127 Applications
There are a lot of Rochester Electronics, LLC
MJF127 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJF127 More Descriptions
Tube Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 2000 @ 3A 3V 5A 2W 4MHz
5.0 A, 100 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
5.0 A, 100 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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