MJF127

ON Semiconductor MJF127

Part Number:
MJF127
Manufacturer:
ON Semiconductor
Ventron No:
2466860-MJF127
Description:
TRANS PNP DARL 100V 5A TO220FP
ECAD Model:
Datasheet:
MJF127

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Specifications
ON Semiconductor MJF127 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJF127.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e0
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Additional Feature
    UL RECOGNIZED
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    240
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
  • Case Connection
    ISOLATED
  • Power - Max
    2W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP - Darlington
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    2000 @ 3A 3V
  • Current - Collector Cutoff (Max)
    10μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    3.5V @ 20mA, 5A
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Current - Collector (Ic) (Max)
    5A
  • Transition Frequency
    4MHz
  • RoHS Status
    Non-RoHS Compliant
Description
MJF127 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 3A 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 20mA, 5A.Parts of this part have transition frequencies of 4MHz.This device displays a 100V maximum voltage - Collector Emitter Breakdown.

MJF127 Features
the DC current gain for this device is 2000 @ 3A 3V
the vce saturation(Max) is 3.5V @ 20mA, 5A
a transition frequency of 4MHz


MJF127 Applications
There are a lot of Rochester Electronics, LLC
MJF127 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJF127 More Descriptions
Tube Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 2000 @ 3A 3V 5A 2W 4MHz
5.0 A, 100 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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