Fairchild/ON Semiconductor MJE350STU
- Part Number:
- MJE350STU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2465422-MJE350STU
- Description:
- TRANS PNP 300V 0.5A TO-126
- ECAD Model:
-
- Datasheet:
- MJE350STU
Fairchild/ON Semiconductor MJE350STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MJE350STU.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Factory Lead Time7 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Weight761mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation20W
- Current Rating-500mA
- Base Part NumberMJE350
- Number of Elements1
- PolarityPNP, NPN
- Element ConfigurationSingle
- Power Dissipation20W
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA 10V
- Current - Collector Cutoff (Max)100μA ICBO
- Collector Emitter Breakdown Voltage300V
- Collector Base Voltage (VCBO)-300V
- Emitter Base Voltage (VEBO)-5V
- hFE Min30
- Height11mm
- Length8mm
- Width3.25mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE350STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.Collector current can be as low as 500mA volts at its maximum.
MJE350STU Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
MJE350STU Applications
There are a lot of ON Semiconductor
MJE350STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 50mA 10V.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.Collector current can be as low as 500mA volts at its maximum.
MJE350STU Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
MJE350STU Applications
There are a lot of ON Semiconductor
MJE350STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE350STU More Descriptions
0.5 A, 300 V PNP Bipolar Power Transistor
100Ã×A 300V 20W 500mA 30@50mA10V PNP 150¡Í@(Tj) TO-126 Bipolar Transistors - BJT ROHS
MJE350 Series 300 V CE Breakdown .5 A PNP Epitaxial Silicon Transistor TO-126
Trans GP BJT PNP 300V 0.5A 20000mW 3-Pin(3 Tab) TO-126 Tube
Bipolar Transistors - BJT PNP Epitaxial Sil
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Transistor, BIPOL, PNP, -300V, TO-126-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:-; Power
TRANSISTOR, BIPOL, PNP, -300V, TO-126-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: -500mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
100Ã×A 300V 20W 500mA 30@50mA10V PNP 150¡Í@(Tj) TO-126 Bipolar Transistors - BJT ROHS
MJE350 Series 300 V CE Breakdown .5 A PNP Epitaxial Silicon Transistor TO-126
Trans GP BJT PNP 300V 0.5A 20000mW 3-Pin(3 Tab) TO-126 Tube
Bipolar Transistors - BJT PNP Epitaxial Sil
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Transistor, BIPOL, PNP, -300V, TO-126-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:-; Power
TRANSISTOR, BIPOL, PNP, -300V, TO-126-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: -500mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
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