MJ15016G

ON Semiconductor MJ15016G

Part Number:
MJ15016G
Manufacturer:
ON Semiconductor
Ventron No:
2465503-MJ15016G
Description:
TRANS PNP 120V 15A TO3
ECAD Model:
Datasheet:
MJ15016G

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Specifications
ON Semiconductor MJ15016G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ15016G.
  • Lifecycle Status
    ACTIVE (Last Updated: 14 hours ago)
  • Factory Lead Time
    2 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Surface Mount
    NO
  • Number of Pins
    2
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Tray
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -120V
  • Max Power Dissipation
    180W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -15A
  • Frequency
    18MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    180W
  • Case Connection
    COLLECTOR
  • Power - Max
    115W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    18MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    120V
  • Max Collector Current
    15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 4A 2V
  • Current - Collector Cutoff (Max)
    100μA
  • Vce Saturation (Max) @ Ib, Ic
    5V @ 7A, 15A
  • Collector Emitter Breakdown Voltage
    120V
  • Transition Frequency
    2.2MHz
  • Collector Emitter Saturation Voltage
    1.1V
  • Collector Base Voltage (VCBO)
    200V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    10
  • Height
    8.51mm
  • Length
    39.37mm
  • Width
    26.67mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJ15016G Overview
In this device, the DC current gain is 10 @ 4A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 7A, 15A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2.2MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.

MJ15016G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.2MHz


MJ15016G Applications
There are a lot of ON Semiconductor
MJ15016G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJ15016G More Descriptions
Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
15 A, 120 V, PNP Bipolar Power Transistor
Trans GP BJT PNP 120V 15A 115000mW 3-Pin(2 Tab) TO-3 Tray / TRANS PNP 120V 15A TO3
MJ Series 120 V 15 A PNP Complementary Silicon High Power Transistor - TO-204AA
Transistor MJ15016 High-Power PNP 200Volt 15Amp TO-204AA
Transistor, Bipolar, Si, PNP, High Power, VCEO 120VDC, IC 15A, PD 180W, VCBO 200VDC | ON Semiconductor MJ15016G
TRANSISTOR, PNP, TO-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 120V; Transition Frequency ft: 18MHz; Power Dissipation Pd: 180W; DC Collector Current: 15A; DC Current Gain hFE: 70hFE; Transistor Case Styl
. . . PowerBase complementary transistors designed for high power audio stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers dc-to-dc converters inverters or for inductive loads requiring higher safe operating area than the 2N3055.
Product Comparison
The three parts on the right have similar specifications to MJ15016G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Power - Max
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Number of Terminals
    Terminal Finish
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    JEDEC-95 Code
    Collector Current-Max (IC)
    DC Current Gain-Min (hFE)
    Collector-Emitter Voltage-Max
    Mount
    View Compare
  • MJ15016G
    MJ15016G
    ACTIVE (Last Updated: 14 hours ago)
    2 Weeks
    Tin
    Through Hole
    TO-204AA, TO-3
    NO
    2
    4.535924g
    SILICON
    -65°C~200°C TJ
    Tray
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -120V
    180W
    BOTTOM
    PIN/PEG
    260
    -15A
    18MHz
    40
    2
    1
    Single
    180W
    COLLECTOR
    115W
    SWITCHING
    18MHz
    PNP
    PNP
    120V
    15A
    10 @ 4A 2V
    100μA
    5V @ 7A, 15A
    120V
    2.2MHz
    1.1V
    200V
    7V
    10
    8.51mm
    39.37mm
    26.67mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJ15019
    MOTOROLA
    -
    -
    -
    -
    -
    NO
    -
    -
    SILICON
    -
    -
    -
    e0
    no
    -
    -
    -
    EAR99
    -
    -
    -
    BOTTOM
    PIN/PEG
    225
    -
    -
    NOT SPECIFIED
    2
    1
    -
    -
    COLLECTOR
    -
    AMPLIFIER
    -
    PNP
    -
    -
    -
    -
    -
    -
    -
    20MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    2
    TIN LEAD
    compliant
    O-MBFM-P2
    Not Qualified
    200°C
    SINGLE
    TO-204AA
    4A
    10
    200V
    -
  • MJ15001
    -
    -
    -
    Through Hole
    TO-204AA, TO-3
    -
    3
    -
    SILICON
    -65°C~200°C TJ
    Tray
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    140V
    200W
    BOTTOM
    PIN/PEG
    240
    15A
    -
    30
    2
    1
    Single
    -
    COLLECTOR
    -
    AMPLIFIER
    2MHz
    NPN
    NPN
    140V
    15A
    25 @ 4A 2V
    250μA
    1V @ 400mA, 4A
    140V
    2MHz
    1V
    140V
    5V
    25
    -
    -
    -
    -
    No
    Non-RoHS Compliant
    Contains Lead
    -
    Tin/Lead (Sn80Pb20)
    -
    O-MBFM-P2
    -
    -
    -
    -
    -
    -
    -
    Through Hole
  • MJ15011G
    LAST SHIPMENTS (Last Updated: 4 days ago)
    -
    -
    Through Hole
    TO-204AA, TO-3
    -
    2
    -
    SILICON
    -65°C~200°C TJ
    Tray
    2005
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    250V
    200W
    BOTTOM
    PIN/PEG
    260
    10A
    -
    40
    2
    1
    Single
    200W
    COLLECTOR
    -
    SWITCHING
    -
    NPN
    NPN
    250V
    10A
    20 @ 2A 2V
    1mA
    1V @ 400mA, 4A
    250V
    -
    1V
    250V
    5V
    20
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    Lead Free
    -
    Tin (Sn)
    -
    -
    Not Qualified
    -
    -
    -
    -
    -
    -
    Through Hole
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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