ON Semiconductor MJ15016G
- Part Number:
- MJ15016G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465503-MJ15016G
- Description:
- TRANS PNP 120V 15A TO3
- Datasheet:
- MJ15016G
ON Semiconductor MJ15016G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ15016G.
- Lifecycle StatusACTIVE (Last Updated: 14 hours ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-120V
- Max Power Dissipation180W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating-15A
- Frequency18MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation180W
- Case ConnectionCOLLECTOR
- Power - Max115W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product18MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)120V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 4A 2V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic5V @ 7A, 15A
- Collector Emitter Breakdown Voltage120V
- Transition Frequency2.2MHz
- Collector Emitter Saturation Voltage1.1V
- Collector Base Voltage (VCBO)200V
- Emitter Base Voltage (VEBO)7V
- hFE Min10
- Height8.51mm
- Length39.37mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJ15016G Overview
In this device, the DC current gain is 10 @ 4A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 7A, 15A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2.2MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
MJ15016G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.2MHz
MJ15016G Applications
There are a lot of ON Semiconductor
MJ15016G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 4A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 5V @ 7A, 15A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2.2MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
MJ15016G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 2.2MHz
MJ15016G Applications
There are a lot of ON Semiconductor
MJ15016G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJ15016G More Descriptions
Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
15 A, 120 V, PNP Bipolar Power Transistor
Trans GP BJT PNP 120V 15A 115000mW 3-Pin(2 Tab) TO-3 Tray / TRANS PNP 120V 15A TO3
MJ Series 120 V 15 A PNP Complementary Silicon High Power Transistor - TO-204AA
Transistor MJ15016 High-Power PNP 200Volt 15Amp TO-204AA
Transistor, Bipolar, Si, PNP, High Power, VCEO 120VDC, IC 15A, PD 180W, VCBO 200VDC | ON Semiconductor MJ15016G
TRANSISTOR, PNP, TO-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 120V; Transition Frequency ft: 18MHz; Power Dissipation Pd: 180W; DC Collector Current: 15A; DC Current Gain hFE: 70hFE; Transistor Case Styl
. . . PowerBase complementary transistors designed for high power audio stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers dc-to-dc converters inverters or for inductive loads requiring higher safe operating area than the 2N3055.
15 A, 120 V, PNP Bipolar Power Transistor
Trans GP BJT PNP 120V 15A 115000mW 3-Pin(2 Tab) TO-3 Tray / TRANS PNP 120V 15A TO3
MJ Series 120 V 15 A PNP Complementary Silicon High Power Transistor - TO-204AA
Transistor MJ15016 High-Power PNP 200Volt 15Amp TO-204AA
Transistor, Bipolar, Si, PNP, High Power, VCEO 120VDC, IC 15A, PD 180W, VCBO 200VDC | ON Semiconductor MJ15016G
TRANSISTOR, PNP, TO-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 120V; Transition Frequency ft: 18MHz; Power Dissipation Pd: 180W; DC Collector Current: 15A; DC Current Gain hFE: 70hFE; Transistor Case Styl
. . . PowerBase complementary transistors designed for high power audio stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers dc-to-dc converters inverters or for inductive loads requiring higher safe operating area than the 2N3055.
The three parts on the right have similar specifications to MJ15016G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeNumber of TerminalsTerminal FinishReach Compliance CodeJESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationJEDEC-95 CodeCollector Current-Max (IC)DC Current Gain-Min (hFE)Collector-Emitter Voltage-MaxMountView Compare
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MJ15016GACTIVE (Last Updated: 14 hours ago)2 WeeksTinThrough HoleTO-204AA, TO-3NO24.535924gSILICON-65°C~200°C TJTray2006e3yesActive1 (Unlimited)2EAR99Other Transistors-120V180WBOTTOMPIN/PEG260-15A18MHz4021Single180WCOLLECTOR115WSWITCHING18MHzPNPPNP120V15A10 @ 4A 2V100μA5V @ 7A, 15A120V2.2MHz1.1V200V7V108.51mm39.37mm26.67mmNo SVHCNoROHS3 CompliantLead Free-------------
-
MOTOROLA-----NO--SILICON---e0no---EAR99---BOTTOMPIN/PEG225--NOT SPECIFIED21--COLLECTOR-AMPLIFIER-PNP-------20MHz---------Non-RoHS Compliant-2TIN LEADcompliantO-MBFM-P2Not Qualified200°CSINGLETO-204AA4A10200V-
-
---Through HoleTO-204AA, TO-3-3-SILICON-65°C~200°C TJTray2005e0-Obsolete1 (Unlimited)2EAR99Other Transistors140V200WBOTTOMPIN/PEG24015A-3021Single-COLLECTOR-AMPLIFIER2MHzNPNNPN140V15A25 @ 4A 2V250μA1V @ 400mA, 4A140V2MHz1V140V5V25----NoNon-RoHS CompliantContains Lead-Tin/Lead (Sn80Pb20)-O-MBFM-P2-------Through Hole
-
LAST SHIPMENTS (Last Updated: 4 days ago)--Through HoleTO-204AA, TO-3-2-SILICON-65°C~200°C TJTray2005e3yesObsolete1 (Unlimited)2EAR99Other Transistors250V200WBOTTOMPIN/PEG26010A-4021Single200WCOLLECTOR-SWITCHING-NPNNPN250V10A20 @ 2A 2V1mA1V @ 400mA, 4A250V-1V250V5V20---No SVHC-RoHS CompliantLead Free-Tin (Sn)--Not Qualified------Through Hole
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