ON Semiconductor MC1413DR2G
- Part Number:
- MC1413DR2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2461050-MC1413DR2G
- Description:
- TRANS 7NPN DARL 50V 0.5A 16SO
- Datasheet:
- MC1413DR2G
ON Semiconductor MC1413DR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MC1413DR2G.
- Lifecycle StatusACTIVE (Last Updated: 15 hours ago)
- Factory Lead Time7 Weeks
- Contact PlatingTin
- MountSurface Mount, Through Hole
- Mounting TypeSurface Mount
- Package / Case16-SOIC (0.154, 3.90mm Width)
- Number of Pins16
- Weight665.986997mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations16
- ECCN CodeEAR99
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Voltage - Rated DC50V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMC1413
- Pin Count16
- Output Voltage50V
- Number of Elements7
- PolarityNPN
- ConfigurationCOMPLEX
- Output Current500mA
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor Type7 NPN Darlington
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 350mA 2V
- Vce Saturation (Max) @ Ib, Ic1.6V @ 500μA, 350mA
- Collector Emitter Breakdown Voltage1.1V
- Collector Emitter Saturation Voltage1.6V
- hFE Min1000
- Height1.5mm
- Length10mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The ON Semiconductor MC1413DR2G is a 7-channel Darlington transistor array in a SOIC-14 package. It is designed for use in a wide range of applications, including power switching, motor control, and signal amplification. The MC1413DR2G features a maximum collector-emitter voltage of 50V, a maximum collector current of 500mA, and a maximum power dissipation of 1.5W. It also has a high current gain of 1000, making it ideal for applications requiring high current gain. The MC1413DR2G is a reliable and cost-effective solution for a variety of applications.
MC1413DR2G More Descriptions
MC Series 500 mA 50 V NPN High Current Darlington Transistor Array - SOIC-16
Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, Plastic/Epoxy, 16 Pin
Trans Darlington NPN 50V 0.5A 16-Pin SOIC T/R / TRANS 7NPN DARL 50V 0.5A 16SO
Transistor Polarity:NPN; Collector Emitter Voltage Max NPN:1.1V; Collector Emitter Voltage Max PNP:-; Continuous Collector Current NPN:500mA; Continuous Collector Current PNP:-; Power Dissipation NPN:-; Power Dissipation PNP:- RoHS Compliant: Yes
High Voltage, High Current Darlington Transistor Driver Array
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
High Voltage, High Current Darlington Transistor Array, SOIC16, Pb-Free | ON Semiconductor MC1413DR2G
Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, Plastic/Epoxy, 16 Pin
Trans Darlington NPN 50V 0.5A 16-Pin SOIC T/R / TRANS 7NPN DARL 50V 0.5A 16SO
Transistor Polarity:NPN; Collector Emitter Voltage Max NPN:1.1V; Collector Emitter Voltage Max PNP:-; Continuous Collector Current NPN:500mA; Continuous Collector Current PNP:-; Power Dissipation NPN:-; Power Dissipation PNP:- RoHS Compliant: Yes
High Voltage, High Current Darlington Transistor Driver Array
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
High Voltage, High Current Darlington Transistor Array, SOIC16, Pb-Free | ON Semiconductor MC1413DR2G
The three parts on the right have similar specifications to MC1413DR2G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureVoltage - Rated DCTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountOutput VoltageNumber of ElementsPolarityConfigurationOutput CurrentTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltagehFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishJESD-30 CodeQualification StatusPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Supplier Device PackageView Compare
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MC1413DR2GACTIVE (Last Updated: 15 hours ago)7 WeeksTinSurface Mount, Through HoleSurface Mount16-SOIC (0.154, 3.90mm Width)16665.986997mgSILICON150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)16EAR99LOGIC LEVEL COMPATIBLE50VDUALGULL WING260500mA40MC14131650V7NPNCOMPLEX500mASWITCHINGHalogen Free7 NPN Darlington50V500mA1000 @ 350mA 2V1.6V @ 500μA, 350mA1.1V1.6V10001.5mm10mm4mmNo SVHCNoROHS3 CompliantLead Free---------
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----Through Hole16-DIP (0.300, 7.62mm)--SILICON150°C TJTube-e3noObsolete1 (Unlimited)16-LOGIC LEVEL COMPATIBLE-DUAL-260-40-16-7-COMPLEX-SWITCHING-7 NPN Darlington--1000 @ 350mA 2V1.6V @ 500μA, 350mA--------ROHS3 Compliant-NOMATTE TINR-PDIP-T16COMMERCIALNPN50V500mA-
-
----Surface Mount16-SOIC (0.154, 3.90mm Width)---150°C TJTube---Last Time Buy1 (Unlimited)------------------7 NPN Darlington--1000 @ 350mA 2V1.6V @ 500μA, 350mA--------ROHS3 Compliant------50V500mA16-SOIC
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----Surface Mount16-SOIC (0.154, 3.90mm Width)---150°C TJTube---Last Time Buy1 (Unlimited)------------------7 NPN Darlington--1000 @ 350mA 2V1.6V @ 500μA, 350mA--------ROHS3 Compliant------50V500mA16-SOIC
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