GeneSiC Semiconductor MBRT30080R

Name: MBRT30080R
Brand: GeneSiC Semiconductor
SKU: 2420108-MBRT30080R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBRT30080R

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2420108-MBRT30080R

Description:: DIODE MODULE 80V 300A 3TOWER

ECAD Model:

Datasheet:: MBRT30080R

Specifications

GeneSiC Semiconductor MBRT30080R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBRT30080R.

Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
880mV @ 150A
Case Connection
ISOLATED
Forward Current
300A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
2.5kA
Output Current-Max
150A
Application
POWER
Current - Average Rectified (Io)
300A DC
Max Reverse Voltage (DC)
80V
Average Rectified Current
300A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
80V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant

Description

MBRT30080R Overview
150A is the maximum output voltage array can support.Array is important to monArrayor the surge current and make sure that Array does not exceed 2.5kA.In the case of 300A forward voltage, the device will operate.Powered by reverse voltage, this device has a peak voltage of 1A.This semiconductor device's maximal reverse leakage current is 1μA kA, which is its reverse leakage current when reverse biased.

MBRT30080R Features
a maximum output voltage of 150A
a peak voltage of 1A
a reverse voltage peak of 1A

MBRT30080R Applications
There are a lot of GeneSiC Semiconductor
MBRT30080R applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

MBRT30080R More Descriptions

80 V 300 A Three Tower Silicon Schottky Rectifier
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 300A 80P57RV
DIODE MODULE 80V 300A 3TOWER
Contact for details

Product Comparison

The three parts on the right have similar specifications to MBRT30080R.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Output Current-Max

Application

Current - Average Rectified (Io)

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Diode Configuration

RoHS Status

Element Configuration

View Compare
MBRT30080R

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Three Tower

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

3

EAR99

150°C

-40°C

8541.10.00.80

UPPER

UNSPECIFIED

R-PUFM-X3

2

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 20V

880mV @ 150A

ISOLATED

300A

1μA

-55°C~150°C

2.5kA

150A

POWER

300A DC

80V

300A

1

1A

80V

1 Pair Common Anode

RoHS Compliant

-

-
MBRT20030

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Three Tower

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

3

EAR99

150°C

-40°C

8541.10.00.80

UPPER

UNSPECIFIED

R-PUFM-X3

2

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 20V

750mV @ 100A

ISOLATED

200A

1μA

-

1.5kA

100A

POWER

200A DC

30V

200A

1

1A

30V

1 Pair Common Cathode

RoHS Compliant

-

MBRT30080R vs MBRT20030
MBRT30040R

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Three Tower

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

3

-

150°C

-40°C

-

UPPER

UNSPECIFIED

R-PUFM-X3

2

Fast Recovery =< 500ns, > 200mA (Io)

Schottky, Reverse Polarity

1mA @ 20V

750mV @ 150A

ISOLATED

300A

1μA

-55°C~150°C

2.5kA

150A

POWER

300A DC

40V

300A

1

1A

40V

1 Pair Common Anode

RoHS Compliant

Common Anode

MBRT30080R vs MBRT30040R
MBRT20040

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Three Tower

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

3

EAR99

150°C

-40°C

8541.10.00.80

UPPER

UNSPECIFIED

R-PUFM-X3

2

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 20V

750mV @ 100A

ISOLATED

200A

1μA

-55°C~150°C

1.5kA

100A

POWER

200A DC

40V

200A

1

1A

40V

1 Pair Common Cathode

RoHS Compliant

Common Cathode

MBRT30080R vs MBRT20040