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MBR8060

GeneSiC Semiconductor MBR8060

Part Number:
MBR8060
Manufacturer:
GeneSiC Semiconductor
Ventron No:
3064131-MBR8060
Description:
DIODE SCHOTTKY 60V 80A DO5
ECAD Model:
Datasheet:
MBR8060

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Specifications
GeneSiC Semiconductor MBR8060 technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR8060.
  • Lifecycle Status
    PRODUCTION (Last Updated: 5 months ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Chassis, Stud, Through Hole
  • Mounting Type
    Chassis, Stud Mount
  • Package / Case
    DO-203AB, DO-5, Stud
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2013
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    1
  • Termination
    Solder
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Gender
    Female
  • HTS Code
    8541.10.00.80
  • Pitch
    2.54mm
  • Terminal Position
    UPPER
  • Orientation
    Straight
  • JESD-30 Code
    O-MUPM-D1
  • Number of Contacts
    11
  • Number of Elements
    1
  • Contact Resistance
    20mOhm
  • Configuration
    SINGLE
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    5mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    750mV @ 80A
  • Case Connection
    CATHODE
  • Forward Current
    80A
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    1kA
  • Application
    POWER
  • Max Reverse Voltage (DC)
    60V
  • Average Rectified Current
    80A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    60V
  • Natural Thermal Resistance
    1 °C/W
  • RoHS Status
    RoHS Compliant
Description
MBR8060 Overview
Phase diode rectifier produces a maximum reverse leakage current of 1μA volts.As a result, this device has a rectified current of 80A volts on average.Phase diode rectifier is permissible for forward current to reach 80A.As a measure of resistance to heat flow, thermal resistance measures the temperature difference at which a material or object resists a heat flow. The natural thermal resistance is 1 °C/W.There is no maximum value for 1kA surge current.Based on the data charts in the datasheets, the peak reverse is 1A.

MBR8060 Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 80A volts
the peak reverse is 1A


MBR8060 Applications
There are a lot of GeneSiC Semiconductor
MBR8060 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
MBR8060 More Descriptions
60V 80A DO-5 Silicon Stud Rectifier - Schottky (Standard Configuration)
DIODE SCHOTTKY 60V 80A DO5
Schottky Rectifier, Single, 60V, 80A, Do-203Ab; Repetitive Peak Reverse Voltage:60V; Average Forward Current:80A; Forward Voltage Max:750Mv; Diode Module Configuration:Single; Diode Case Style:Do-5; No. Of Pins:2Pins; Product Range:-Rohs Compliant: Yes |Genesic Semiconductor MBR8060
Product Comparison
The three parts on the right have similar specifications to MBR8060.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    Gender
    HTS Code
    Pitch
    Terminal Position
    Orientation
    JESD-30 Code
    Number of Contacts
    Number of Elements
    Contact Resistance
    Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Max Reverse Leakage Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Natural Thermal Resistance
    RoHS Status
    Supplier Device Package
    Voltage - DC Reverse (Vr) (Max)
    Current - Average Rectified (Io)
    Capacitance @ Vr, F
    Terminal Form
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Element Configuration
    Output Current-Max
    Forward Voltage
    Peak Non-Repetitive Surge Current
    View Compare
  • MBR8060
    MBR8060
    GeneSiC Semiconductor
    PRODUCTION (Last Updated: 5 months ago)
    10 Weeks
    Chassis, Stud, Through Hole
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    SILICON
    Bulk
    2013
    yes
    Active
    1 (Unlimited)
    1
    Solder
    EAR99
    150°C
    -65°C
    Female
    8541.10.00.80
    2.54mm
    UPPER
    Straight
    O-MUPM-D1
    11
    1
    20mOhm
    SINGLE
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    5mA @ 20V
    750mV @ 80A
    CATHODE
    80A
    1μA
    -55°C~150°C
    1kA
    POWER
    60V
    80A
    1
    1A
    60V
    1 °C/W
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR860STR
    MBR860STR
    SMC Diode Solutions
    -
    6 Weeks
    -
    Surface Mount
    TO-277, 3-PowerDFN
    -
    Tape & Reel (TR)
    2015
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    1mA @ 60V
    650mV @ 8A
    -
    -
    -
    -55°C~150°C
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    TO-277B
    60V
    8A
    400pF @ 5V 1MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MBR8060 vs MBR860STR
  • MBR8080
    MBR8080
    GeneSiC Semiconductor
    PRODUCTION (Last Updated: 5 months ago)
    10 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    SILICON
    Bulk
    2013
    yes
    Active
    1 (Unlimited)
    1
    -
    EAR99
    150°C
    -65°C
    -
    8541.10.00.80
    -
    UPPER
    -
    O-MUPM-D1
    -
    1
    -
    SINGLE
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    1mA @ 80V
    840mV @ 80A
    CATHODE
    80A
    1μA
    -55°C~150°C
    1kA
    POWER
    80V
    80A
    1
    1A
    80V
    1 °C/W
    RoHS Compliant
    -
    -
    -
    -
    SOLDER LUG
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MBR8060 vs MBR8080
  • MBR830MFST3G
    MBR830MFST3G
    ON Semiconductor
    -
    8 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN, 5 Leads
    SILICON
    Tape & Reel (TR)
    2013
    yes
    Active
    1 (Unlimited)
    5
    -
    EAR99
    150°C
    -40°C
    -
    -
    -
    DUAL
    -
    R-PDSO-F5
    -
    1
    -
    -
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    200μA @ 30V
    700mV @ 8A
    CATHODE
    -
    -
    -40°C~150°C
    -
    EFFICIENCY
    30V
    8A
    1
    200μA
    30V
    -
    ROHS3 Compliant
    -
    -
    -
    -
    FLAT
    e3
    Tin (Sn)
    LOW POWER LOSS
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Single
    8A
    700mV
    150A
    MBR8060 vs MBR830MFST3G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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