GeneSiC Semiconductor MBR8030R

Name: MBR8030R
Brand: GeneSiC Semiconductor
SKU: 3582200-MBR8030R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBR8030R

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 3582200-MBR8030R

Description:: DIODE SCHOTTKY REV 30V DO5

ECAD Model:

Datasheet:: MBR8030R

Specifications

GeneSiC Semiconductor MBR8030R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR8030R.

Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Factory Lead Time
10 Weeks
Mount
Chassis, Stud
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AB, DO-5, Stud
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
1
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
SOLDER LUG
JESD-30 Code
O-MUPM-D1
Number of Elements
1
Configuration
SINGLE
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr
1mA @ 30V
Voltage - Forward (Vf) (Max) @ If
750mV @ 80A
Case Connection
ANODE
Forward Current
80A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
1kA
Application
POWER
Max Reverse Voltage (DC)
30V
Average Rectified Current
80A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
30V
Natural Thermal Resistance
1 °C/W
RoHS Status
RoHS Compliant

Description

MBR8030R Overview
Phase diode rectifier produces a maximum reverse leakage current of 1μA volts.As a result, this device has a rectified current of 80A volts on average.Phase diode rectifier is permissible for forward current to reach 80A.As a measure of resistance to heat flow, thermal resistance measures the temperature difference at which a material or object resists a heat flow. The natural thermal resistance is 1 °C/W.There is no maximum value for 1kA surge current.Based on the data charts in the datasheets, the peak reverse is 1A.

MBR8030R Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 80A volts
the peak reverse is 1A

MBR8030R Applications
There are a lot of GeneSiC Semiconductor
MBR8030R applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

MBR8030R More Descriptions

30V 80A DO-5 Silicon Stud Rectifier - Schottky (Reverse Configuration)
DIODE SCHOTTKY REV 30V 80A DO5
Schottky Rectifier, Single, 30V, 80A, Do-203Ab; Repetitive Peak Reverse Voltage:30V; Average Forward Current:80A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Do-5; No. Of Pins:2Pins; Product Range:-Rohs Compliant: Yes |Genesic Semiconductor MBR8030R

Product Comparison

The three parts on the right have similar specifications to MBR8030R.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Application

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Natural Thermal Resistance

RoHS Status

Termination

Gender

Pitch

Orientation

Number of Contacts

Contact Resistance

JESD-609 Code

Terminal Finish

Additional Feature

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Element Configuration

Output Current-Max

Peak Non-Repetitive Surge Current

Surface Mount

Pin Count

Qualification Status

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Rep Pk Reverse Voltage-Max

JEDEC-95 Code

Non-rep Pk Forward Current-Max

View Compare
MBR8030R

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

10 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2013

yes

Active

1 (Unlimited)

1

EAR99

150°C

-65°C

8541.10.00.80

UPPER

SOLDER LUG

O-MUPM-D1

1

SINGLE

Fast Recovery =< 500ns, > 200mA (Io)

Schottky, Reverse Polarity

1mA @ 30V

750mV @ 80A

ANODE

80A

1μA

-55°C~150°C

1kA

POWER

30V

80A

1

1A

30V

1 °C/W

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MBR8060

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

10 Weeks

Chassis, Stud, Through Hole

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2013

yes

Active

1 (Unlimited)

1

EAR99

150°C

-65°C

8541.10.00.80

UPPER

-

O-MUPM-D1

1

SINGLE

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

5mA @ 20V

750mV @ 80A

CATHODE

80A

1μA

-55°C~150°C

1kA

POWER

60V

80A

1

1A

60V

1 °C/W

RoHS Compliant

Solder

Female

2.54mm

Straight

11

20mOhm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MBR8030R vs MBR8060
MBR830MFST1G

ON Semiconductor

-

8 Weeks

Surface Mount

Surface Mount

8-PowerTDFN, 5 Leads

SILICON

Tape & Reel (TR)

2013

yes

Active

1 (Unlimited)

5

EAR99

150°C

-40°C

-

DUAL

FLAT

R-PDSO-F5

1

-

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

200μA @ 30V

700mV @ 8A

CATHODE

-

-

-40°C~150°C

-

EFFICIENCY

30V

8A

1

200μA

30V

-

ROHS3 Compliant

-

-

-

-

-

-

e3

Tin (Sn)

LOW POWER LOSS

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Single

8A

150A

-

-

-

-

-

-

-

-

MBR8030R vs MBR830MFST1G
MBR840RL

ON Semiconductor

-

-

-

Through Hole

DO-201AA, DO-27, Axial

SILICON

Tape & Reel (TR)

-

yes

Obsolete

1 (Unlimited)

2

-

-

-

-

-

WIRE

R-PALF-W2

1

SINGLE

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 40V

550mV @ 8A

ISOLATED

-

-

-65°C~125°C

-

EFFICIENCY

-

-

1

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

e3

TIN

LOW POWER LOSS, FREE WHEELING DIODE

NOT SPECIFIED

-

NOT SPECIFIED

-

8A

-

NO

2

COMMERCIAL

40V

8A

40V

DO-201AD

140A

MBR8030R vs MBR840RL