GeneSiC Semiconductor MBR50080CT
- Part Number:
- MBR50080CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2420189-MBR50080CT
- Description:
- DIODE MODULE 80V 500A 2TOWER
- Datasheet:
- MBR50080CT
GeneSiC Semiconductor MBR50080CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR50080CT.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Diode Element MaterialSILICON
- PackagingBulk
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- JESD-30 CodeR-PUFM-X2
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr1mA @ 20V
- Voltage - Forward (Vf) (Max) @ If880mV @ 250A
- Forward Current500A
- Max Reverse Leakage Current1μA
- Max Surge Current3.5kA
- Output Current-Max250A
- ApplicationPOWER
- Current - Average Rectified (Io)500A DC
- Max Reverse Voltage (DC)80V
- Average Rectified Current500A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)80V
- Diode Configuration1 Pair Common Cathode
- RoHS StatusRoHS Compliant
MBR50080CT Overview
A maximum output voltage of 250A can be supported.Surge currents should be monitored and prevented from exceeding 3.5kA.This device will operate when the forward voltage is set to 500A.A reverse voltage peak of 1A is used to power devices like this one.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
MBR50080CT Features
a maximum output voltage of 250A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR50080CT Applications
There are a lot of GeneSiC Semiconductor
MBR50080CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
A maximum output voltage of 250A can be supported.Surge currents should be monitored and prevented from exceeding 3.5kA.This device will operate when the forward voltage is set to 500A.A reverse voltage peak of 1A is used to power devices like this one.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
MBR50080CT Features
a maximum output voltage of 250A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR50080CT Applications
There are a lot of GeneSiC Semiconductor
MBR50080CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR50080CT More Descriptions
Diode Array 1 Pair Common Cathode Schottky 80V 500A (DC) Chassis Mount Twin Tower
80 V 500 A Twin Tower Silicon Schottky Rectifier
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 80P56RV
SCHOTTKY RECTIFIER, COMN CTHD, 80V, 500A, 2-TOWER; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:80V; Forward Current If(AV):500A; Forward Voltage VF Max:880mV; Diode Module Configuration:1 Pair Common Cathode
80 V 500 A Twin Tower Silicon Schottky Rectifier
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 80P56RV
SCHOTTKY RECTIFIER, COMN CTHD, 80V, 500A, 2-TOWER; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:80V; Forward Current If(AV):500A; Forward Voltage VF Max:880mV; Diode Module Configuration:1 Pair Common Cathode
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