GeneSiC Semiconductor MBR40035CTR
- Part Number:
- MBR40035CTR
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2420037-MBR40035CTR
- Description:
- DIODE MODULE 35V 400A 2TOWER
- ECAD Model:
-
- Datasheet:
- MBR40035CTR
GeneSiC Semiconductor MBR40035CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR40035CTR.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingBulk
- Published2003
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements2
- Element ConfigurationCommon Anode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky, Reverse Polarity
- Current - Reverse Leakage @ Vr1mA @ 35V
- Voltage - Forward (Vf) (Max) @ If700mV @ 200A
- Forward Current200A
- Max Reverse Leakage Current1μA
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current3kA
- ApplicationPOWER
- Current - Average Rectified (Io)400A DC
- Forward Voltage650mV
- Max Reverse Voltage (DC)35V
- Average Rectified Current400A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)35V
- Diode Configuration1 Pair Common Anode
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
MBR40035CTR Overview
Devices that have a forward voltage of 650mV will operate.Keeping the surge current under 3kA and preventing it from exceeding it should be the rule.Devices that have a forward voltage of 200A will operate.The reverse voltage peak of this device is 1A.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.
MBR40035CTR Features
650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A
MBR40035CTR Applications
There are a lot of GeneSiC Semiconductor
MBR40035CTR applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
Devices that have a forward voltage of 650mV will operate.Keeping the surge current under 3kA and preventing it from exceeding it should be the rule.Devices that have a forward voltage of 200A will operate.The reverse voltage peak of this device is 1A.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.
MBR40035CTR Features
650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A
MBR40035CTR Applications
There are a lot of GeneSiC Semiconductor
MBR40035CTR applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR40035CTR More Descriptions
35V 400A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
Schottky Rectifier, 35V, 400A, Twin Tower; Repetitive Peak Reverse Voltage:35V; Average Forward Current:200A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Module; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Genesic Semiconductor MBR40035CTR
DIODE, RECTIF, 35V, 400A, TWIN TOWER; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:35V; Forward Current If(AV):200A; Forward Voltage VF Max:650mV; Forward Surge Current Ifsm Max:3kA; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; Diode Case Style:Twin Tower; No. of Pins:2; MSL:-; Operating Temperature Range:-40°C to 175°C
Schottky Rectifier, 35V, 400A, Twin Tower; Repetitive Peak Reverse Voltage:35V; Average Forward Current:200A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Module; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Genesic Semiconductor MBR40035CTR
DIODE, RECTIF, 35V, 400A, TWIN TOWER; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:35V; Forward Current If(AV):200A; Forward Voltage VF Max:650mV; Forward Surge Current Ifsm Max:3kA; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; Diode Case Style:Twin Tower; No. of Pins:2; MSL:-; Operating Temperature Range:-40°C to 175°C
The three parts on the right have similar specifications to MBR40035CTR.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentApplicationCurrent - Average Rectified (Io)Forward VoltageMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationREACH SVHCRoHS StatusVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):JESD-30 CodeOperating Temperature (Max)Non-rep Pk Forward Current-MaxReverse Current-MaxView Compare
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MBR40035CTRPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin Tower2SILICONBulk2003yesActive1 (Unlimited)2EAR99175°C-40°C8541.10.00.80UPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIED2Common AnodeFast Recovery =< 500ns, > 200mA (Io)Schottky, Reverse Polarity1mA @ 35V700mV @ 200A200A1μA-55°C~150°C3kAPOWER400A DC650mV35V400A11A35V1 Pair Common AnodeNo SVHCRoHS Compliant------------------ -
------------------------------------------600mV @ 20A45VTO-220ABFast Recovery = 200mA (Io)-TubeTO-220-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode1mA @ 45V20A----
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------------------------------------------700mV @ 20A35VTO-3PFast Recovery = 200mA (Io)-TubeTO-3P-3, SC-65-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode1mA @ 35V40A----
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PRODUCTION (Last Updated: 5 months ago)6 WeeksChassis MountChassis MountTwin Tower-SILICONBulk-yesActive1 (Unlimited)2EAR99--8541.10.00.80UPPERUNSPECIFIED--2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 200V920mV @ 200A---55°C~150°C-POWER--200V200A1--1 Pair Common Cathode-RoHS Compliant-------------R-PUFM-X2150°C3000A3000μA
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