GeneSiC Semiconductor MBR40030CT
- Part Number:
- MBR40030CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 3581674-MBR40030CT
- Description:
- DIODE MODULE 30V 400A 2TOWER
- ECAD Model:
-
- Datasheet:
- MBR40030CT
GeneSiC Semiconductor MBR40030CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR40030CT.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount, Through Hole
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Diode Element MaterialSILICON
- PackagingBulk
- Published2010
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSolder
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- Pitch4.2mm
- Terminal PositionUPPER
- OrientationStraight
- Terminal FormUNSPECIFIED
- JESD-30 CodeR-PUFM-X2
- Number of Contacts10
- Number of Elements2
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr5mA @ 20V
- Voltage - Forward (Vf) (Max) @ If650mV @ 200A
- Max Voltage Rating (DC)600.6kV
- Forward Current400A
- Max Reverse Leakage Current1μA
- Max Surge Current3kA
- Output Current-Max200A
- ApplicationPOWER
- Current - Average Rectified (Io)400A DC
- Max Reverse Voltage (DC)30V
- Average Rectified Current400A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)30V
- Diode Configuration1 Pair Common Cathode
- RoHS StatusRoHS Compliant
MBR40030CT Overview
The maximum output voltage can be set to 200A.A surge current should be monitored and should not exceed 3kA.As long as the forward voltage is set to 400A, the device will operate.There is a reverse voltage peak of 1A on devices like this one.When reverse biased, its maximum reverse leakage current is 1μA, which is the current coming from that semiconductor device.
MBR40030CT Features
a maximum output voltage of 200A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR40030CT Applications
There are a lot of GeneSiC Semiconductor
MBR40030CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
The maximum output voltage can be set to 200A.A surge current should be monitored and should not exceed 3kA.As long as the forward voltage is set to 400A, the device will operate.There is a reverse voltage peak of 1A on devices like this one.When reverse biased, its maximum reverse leakage current is 1μA, which is the current coming from that semiconductor device.
MBR40030CT Features
a maximum output voltage of 200A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR40030CT Applications
There are a lot of GeneSiC Semiconductor
MBR40030CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR40030CT More Descriptions
30V 400A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
DIODE MOD SCHOTT 30V 200A 2TOWER
SCHOTTKY RECTIFIER, COMN CTHD, 30V, 400A, 2-TOWER; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(AV):400A; Forward Voltage VF Max:650mV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:30V
DIODE MOD SCHOTT 30V 200A 2TOWER
SCHOTTKY RECTIFIER, COMN CTHD, 30V, 400A, 2-TOWER; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(AV):400A; Forward Voltage VF Max:650mV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:30V
The three parts on the right have similar specifications to MBR40030CT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeMax Operating TemperatureMin Operating TemperaturePitchTerminal PositionOrientationTerminal FormJESD-30 CodeNumber of ContactsNumber of ElementsSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfMax Voltage Rating (DC)Forward CurrentMax Reverse Leakage CurrentMax Surge CurrentOutput Current-MaxApplicationCurrent - Average Rectified (Io)Max Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationRoHS StatusAdditional FeatureHTS CodeSubcategoryPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusElement ConfigurationOperating Temperature - JunctionForward VoltageMax Forward Surge Current (Ifsm)Voltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):Operating Temperature (Max)Non-rep Pk Forward Current-MaxReverse Current-MaxView Compare
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MBR40030CTPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis Mount, Through HoleChassis MountTwin TowerSILICONBulk2010yesActive1 (Unlimited)2SolderEAR99175°C-40°C4.2mmUPPERStraightUNSPECIFIEDR-PUFM-X2102Fast Recovery =< 500ns, > 200mA (Io)Schottky5mA @ 20V650mV @ 200A600.6kV400A1μA3kA200APOWER400A DC30V400A11A30V1 Pair Common CathodeRoHS Compliant------------------------------ -
--Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AASILICONTube2009-Obsolete1 (Unlimited)3-EAR99150°C-65°C-SINGLE--R-PSIP-T3-2Fast Recovery =< 500ns, > 200mA (Io)Schottky1mA @ 45V600mV @ 20A-40A---GENERAL PURPOSE-45V20A11mA45V1 Pair Common CathodeNon-RoHS CompliantFREE WHEELING DIODE, HIGH RELIABILITY8541.10.00.80Rectifier DiodesNOT SPECIFIEDunknownNOT SPECIFIEDMBR4045CT3Not QualifiedCommon Cathode-65°C~150°C780mV900A----------------
-
------------------------------------------------------600mV @ 20A45VTO-220ABFast Recovery = 200mA (Io)-TubeTO-220-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode1mA @ 45V20A---
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PRODUCTION (Last Updated: 5 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulk-yesActive1 (Unlimited)2-EAR99---UPPER-UNSPECIFIEDR-PUFM-X2-2Fast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 200V920mV @ 200A-----POWER-200V200A1--1 Pair Common CathodeRoHS Compliant-8541.10.00.80-------Common Cathode-55°C~150°C---------------150°C3000A3000μA
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