GeneSiC Semiconductor MBR20080CT
- Part Number:
- MBR20080CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2419938-MBR20080CT
- Description:
- DIODE MODULE 80V 200A 2TOWER
- ECAD Model:
-
- Datasheet:
- MBR20080CT
GeneSiC Semiconductor MBR20080CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR20080CT.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Diode Element MaterialSILICON
- PackagingBulk
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- JESD-30 CodeR-PUFM-X2
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr5mA @ 20V
- Voltage - Forward (Vf) (Max) @ If840mV @ 100A
- Forward Current200A
- Max Reverse Leakage Current1μA
- Max Surge Current1.5kA
- Output Current-Max100A
- ApplicationPOWER
- Current - Average Rectified (Io)200A DC
- Max Reverse Voltage (DC)80V
- Average Rectified Current200A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)80V
- Diode Configuration1 Pair Common Cathode
- RoHS StatusRoHS Compliant
MBR20080CT Overview
100A is its maximum output voltage.In order to prevent the surge current from exceeding 1.5kA, it should be monitored.There will be no operation of this device when the forward voltage is set to 200A.In devices such as this one, reverse voltage peak is set at 1A.As a reverse biased semiconductor device, its maximal reverse leakage current is 1μA.
MBR20080CT Features
a maximum output voltage of 100A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR20080CT Applications
There are a lot of GeneSiC Semiconductor
MBR20080CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
100A is its maximum output voltage.In order to prevent the surge current from exceeding 1.5kA, it should be monitored.There will be no operation of this device when the forward voltage is set to 200A.In devices such as this one, reverse voltage peak is set at 1A.As a reverse biased semiconductor device, its maximal reverse leakage current is 1μA.
MBR20080CT Features
a maximum output voltage of 100A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR20080CT Applications
There are a lot of GeneSiC Semiconductor
MBR20080CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR20080CT More Descriptions
80V 200A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
DIODE MOD SCHOTT 80V 200A 2TOWER
SCHOTTKY RECTIFIER, COMN CTHD, 80V, 200A, 2-TOWER; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(AV):200A; Forward Voltage VF Max:840mV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:80V
DIODE MOD SCHOTT 80V 200A 2TOWER
SCHOTTKY RECTIFIER, COMN CTHD, 80V, 200A, 2-TOWER; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(AV):200A; Forward Voltage VF Max:840mV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:80V
The three parts on the right have similar specifications to MBR20080CT.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureHTS CodeTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentMax Surge CurrentOutput Current-MaxApplicationCurrent - Average Rectified (Io)Max Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationRoHS StatusAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Operating Temperature (Max)Operating Temperature - JunctionNon-rep Pk Forward Current-MaxReverse Current-MaxVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):Number of PinsWeightJESD-609 CodeTerminal FinishSubcategoryBase Part NumberPin CountForward VoltageJEDEC-95 CodePeak Non-Repetitive Surge CurrentMax Forward Surge Current (Ifsm)HeightLengthWidthRadiation HardeningView Compare
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MBR20080CTPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulk2013yesActive1 (Unlimited)2EAR99175°C-40°C8541.10.00.80UPPERUNSPECIFIEDR-PUFM-X22Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky5mA @ 20V840mV @ 100A200A1μA1.5kA100APOWER200A DC80V200A11A80V1 Pair Common CathodeRoHS Compliant------------------------------------ -
-12 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AASILICONTape & Reel (TR)2017-Active1 (Unlimited)3EAR99--8541.10.00.80SINGLE-R-PSIP-T32Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 35V840mV @ 10A----GENERAL PURPOSE-35V10A1--1 Pair Common CathodeROHS3 CompliantFREE WHEELING DIODE26040150°C-65°C~150°C150A100μA----------------------------
-
---------------------------------------------840mV @ 20A35VTO-220-3Fast Recovery = 200mA (Io)-TubeTO-220-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode100µA @ 35V20A---------------
-
--Through HoleThrough HoleTO-220-3SILICONTube2005noObsolete1 (Unlimited)3EAR99150°C-65°C8541.10.00.80SINGLE--2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 30V840mV @ 20A20A---EFFICIENCY-30V20A1100μA30V1 Pair Common CathodeROHS3 CompliantLOW POWER LOSS, FREE WHEELING DIODE26040--55°C~150°C---------------36.000006ge3Matte Tin (Sn)Rectifier DiodesMBR2030CT3840mVTO-220AB150A150A8.89mm10.4mm4.82mmNo
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