Vishay Semiconductor Diodes Division LL4448-GS08
- Part Number:
- LL4448-GS08
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2420347-LL4448-GS08
- Description:
- DIODE GEN PURP 75V 150MA SOD80
- Datasheet:
- LL4448-GS08
Vishay Semiconductor Diodes Division LL4448-GS08 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division LL4448-GS08.
- Factory Lead Time11 Weeks
- Contact PlatingSilver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseDO-213AC, MINI-MELF, SOD-80
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee0
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- HTS Code8541.10.00.70
- Capacitance4pF
- Max Power Dissipation500mW
- Terminal PositionEND
- Terminal FormWRAP AROUND
- Base Part NumberLL4448
- Pin Count2
- Number of Elements1
- Voltage75V
- Element ConfigurationSingle
- SpeedSmall Signal =< 200mA (Io), Any Speed
- Current500mA
- Diode TypeStandard
- Current - Reverse Leakage @ Vr5μA @ 75V
- Power Dissipation500mW
- Voltage - Forward (Vf) (Max) @ If720mV @ 5mA
- Case ConnectionISOLATED
- Forward Current300mA
- Max Reverse Leakage Current5μA
- Operating Temperature - Junction-65°C~175°C
- Max Surge Current2A
- Forward Voltage1V
- Max Reverse Voltage (DC)75V
- Average Rectified Current150mA
- Reverse Recovery Time8 ns
- Peak Reverse Current5μA
- Max Repetitive Reverse Voltage (Vrrm)100V
- Capacitance @ Vr, F4pF @ 0V 1MHz
- Peak Non-Repetitive Surge Current2A
- Reverse Voltage75V
- Max Forward Surge Current (Ifsm)2A
- Recovery Time8 ns
- Max Junction Temperature (Tj)175°C
- Diameter1.6mm
- Height1.6mm
- Length3.683mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
LL4448-GS08 Overview
An acceptable reverse voltage would be 75V.Phase diode rectifier produces a maximum reverse leakage current of 5μA volts.As a result, this device has a rectified current of 150mA volts on average.A device like this produces no heat as a secondary effect of its primary operation.Phase diode rectifier is permissible for forward current to reach 300mA.500mW heat is lost most efficiently by electronic or electrical devices.There is no maximum value for 2A surge current.Phase diode rectifier is possible for a capacPhase diode rectifierance-based device to output a value of 4pF.Based on the data charts in the datasheets, the peak reverse is 5μA.
LL4448-GS08 Features
a maximal reverse leakage current of 5μA volts
an average rectified current of 150mA volts
the least amount of 500mW heat (energy loss)
the peak reverse is 5μA
LL4448-GS08 Applications
There are a lot of Vishay Semiconductor Diodes Division
LL4448-GS08 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
An acceptable reverse voltage would be 75V.Phase diode rectifier produces a maximum reverse leakage current of 5μA volts.As a result, this device has a rectified current of 150mA volts on average.A device like this produces no heat as a secondary effect of its primary operation.Phase diode rectifier is permissible for forward current to reach 300mA.500mW heat is lost most efficiently by electronic or electrical devices.There is no maximum value for 2A surge current.Phase diode rectifier is possible for a capacPhase diode rectifierance-based device to output a value of 4pF.Based on the data charts in the datasheets, the peak reverse is 5μA.
LL4448-GS08 Features
a maximal reverse leakage current of 5μA volts
an average rectified current of 150mA volts
the least amount of 500mW heat (energy loss)
the peak reverse is 5μA
LL4448-GS08 Applications
There are a lot of Vishay Semiconductor Diodes Division
LL4448-GS08 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
LL4448-GS08 More Descriptions
Rectifier Diode Small Signal Switching Si 100V 0.3A 8ns 2-Pin Mini-MELF SOD-80 T/R
Diode,Rectifier,Standard,Vr 75V,If 300mA,Pkg Mini-Melf (SOD-80),Vf 930mV,Trr 8ns
VISHAY SEMICONDUCTOR LL4448-GS08 Small Signal Diode, Single, 100 V, 150 mA, 1 V, 8 ns, 2 A
Rectifier Diode, 1 Phase, 1 Element, 0.15A, 100V V(RRM), Silicon
100 V 150 mA Small Signal Fast Switching Diode - MiniMELF SOD-80
DIODE, SWITCHING, MINIMELF; Diode Type:Small Signal; Forward Current If(AV):150mA; Repetitive Reverse Voltage Vrrm Max:100V; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:8ns; Forward Surge Current Ifsm Max:2A; Diode Case Style:MiniMELF; No. of Pins:2; Current Ifsm:2A; Junction Temperature Tj Max:175°C; Package / Case:MiniMELF; Termination Type:SMD
Diode,Rectifier,Standard,Vr 75V,If 300mA,Pkg Mini-Melf (SOD-80),Vf 930mV,Trr 8ns
VISHAY SEMICONDUCTOR LL4448-GS08 Small Signal Diode, Single, 100 V, 150 mA, 1 V, 8 ns, 2 A
Rectifier Diode, 1 Phase, 1 Element, 0.15A, 100V V(RRM), Silicon
100 V 150 mA Small Signal Fast Switching Diode - MiniMELF SOD-80
DIODE, SWITCHING, MINIMELF; Diode Type:Small Signal; Forward Current If(AV):150mA; Repetitive Reverse Voltage Vrrm Max:100V; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:8ns; Forward Surge Current Ifsm Max:2A; Diode Case Style:MiniMELF; No. of Pins:2; Current Ifsm:2A; Junction Temperature Tj Max:175°C; Package / Case:MiniMELF; Termination Type:SMD
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