Microsemi Corporation JANTXV1N649-1
- Part Number:
- JANTXV1N649-1
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2435041-JANTXV1N649-1
- Description:
- DIODE GEN PURP 600V 400MA DO35
- Datasheet:
- JANTXV1N649-1
Microsemi Corporation JANTXV1N649-1 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV1N649-1.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time13 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseDO-204AH, DO-35, Axial
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/240
- Published1997
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- Additional FeatureMETALLURGICALLY BONDED
- HTS Code8541.10.00.70
- Max Power Dissipation1.5W
- Terminal FormWIRE
- Pin Count2
- Reference StandardMIL-19500
- Qualification StatusQualified
- Number of Elements1
- Element ConfigurationSingle
- SpeedStandard Recovery >500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr50nA @ 600V
- Voltage - Forward (Vf) (Max) @ If1V @ 400mA
- Case ConnectionISOLATED
- Max Reverse Leakage Current500nA
- Operating Temperature - Junction-65°C~175°C
- Output Current-Max0.4A
- Voltage - DC Reverse (Vr) (Max)600V
- Current - Average Rectified (Io)400mA
- Zener Voltage5.6V
- Rep Pk Reverse Voltage-Max600V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTXV1N649-1 Overview
Reverse leakage current from this device is 500nA volts at its maximum.Electrical or electronic devices generate the least amount of 1.5W heat (energy loss).0.4A represents the maximum output current.
JANTXV1N649-1 Features
a maximal reverse leakage current of 500nA volts
the least amount of 1.5W heat (energy loss)
0.4A is the maximum value
JANTXV1N649-1 Applications
There are a lot of Microsemi Corporation
JANTXV1N649-1 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
Reverse leakage current from this device is 500nA volts at its maximum.Electrical or electronic devices generate the least amount of 1.5W heat (energy loss).0.4A represents the maximum output current.
JANTXV1N649-1 Features
a maximal reverse leakage current of 500nA volts
the least amount of 1.5W heat (energy loss)
0.4A is the maximum value
JANTXV1N649-1 Applications
There are a lot of Microsemi Corporation
JANTXV1N649-1 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JANTXV1N649-1 More Descriptions
Diode Silicon Rectifier 600V 0.4A 2-Pin DO-35 Bag
Non-Compliant Through Hole Bulk 5.6 V 2 Production (Last Updated: 1 month ago) No
Diode Zener Single 5.6V 5% 1500mW 2-Pin DO-41 Bag
Signal or Computer Diode _ DO-35
DIODE GEN PURP 600V 400MA DO35
Non-Compliant Through Hole Bulk 5.6 V 2 Production (Last Updated: 1 month ago) No
Diode Zener Single 5.6V 5% 1500mW 2-Pin DO-41 Bag
Signal or Computer Diode _ DO-35
DIODE GEN PURP 600V 400MA DO35
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