Microsemi Corporation JANS2N5416UA

Name: JANS2N5416UA
Brand: Microsemi Corporation
SKU: 2470534-JANS2N5416UA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANS2N5416UA

Manufacturer:: Microsemi Corporation

Ventron No:: 2470534-JANS2N5416UA

Description:: TRANS PNP 300V 1A

ECAD Model:

Datasheet:: JANS2N5416UA

Specifications

Microsemi Corporation JANS2N5416UA technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANS2N5416UA.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
33 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
4-SMD, No Lead
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/485
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
750mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
1A
Turn Off Time-Max (toff)
10000ns
Turn On Time-Max (ton)
1000ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JANS2N5416UA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 300V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

JANS2N5416UA Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA

JANS2N5416UA Applications
There are a lot of Microsemi Corporation
JANS2N5416UA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANS2N5416UA More Descriptions

Trans GP BJT PNP 4-Pin UA Tray
TRANS PNP 300V 1A UA
Power BJT _ UA
JANS2N5416UA --

Product Comparison

The three parts on the right have similar specifications to JANS2N5416UA.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Terminal Position

Qualification Status

Number of Elements

Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Radiation Hardening

RoHS Status

Diode Element Material

Tolerance

Additional Feature

HTS Code

Technology

Terminal Form

Pin Count

Reference Standard

JESD-30 Code

Power Dissipation-Max

Element Configuration

Diode Type

Current - Reverse Leakage @ Vr

Max Reverse Leakage Current

Impedance-Max

Reference Voltage

Voltage - Zener (Nom) (Vz)

Voltage Tol-Max

Voltage Temp Coeff-Max

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Polarity

Voltage - Forward (Vf) (Max) @ If

Zener Voltage

Working Test Current

Voltage Tolerance

Max Operating Temperature

Min Operating Temperature

Speed

Operating Temperature - Junction

Output Current-Max

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

View Compare
JANS2N5416UA

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

33 Weeks

Surface Mount

Surface Mount

4-SMD, No Lead

4

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/485

2007

e0

no

Discontinued

1 (Unlimited)

4

EAR99

Tin/Lead (Sn/Pb)

DUAL

Qualified

1

SINGLE

COLLECTOR

750mW

SWITCHING

PNP

PNP

30 @ 50mA 10V

1mA

2V @ 5mA, 50mA

300V

1A

10000ns

1000ns

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
JANS1N4568AUR-1

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

40 Weeks

Surface Mount

Surface Mount

DO-213AA

-

-

-65°C~175°C

Bulk

-

1999

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

END

Qualified

1

-

ISOLATED

500mW

-

-

-

-

-

-

-

-

-

-

No

Non-RoHS Compliant

SILICON

±5%

METALLURGICALLY BONDED

8541.10.00.50

ZENER

WRAP AROUND

2

MIL-19500/452

O-LELF-R2

0.5W

Single

ZENER DIODE

2μA @ 3V

2μA

200Ohm

6.4V

6.4V

5%

0.064mV/°C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

JANS2N5416UA vs JANS1N4568AUR-1
JANS1N4962US

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

40 Weeks

Surface Mount

Surface Mount

SQ-MELF, B

2

-

-65°C~175°C

Bulk

-

1999

e0

-

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

END

Qualified

1

-

ISOLATED

-

-

-

-

-

-

-

-

-

-

-

No

Non-RoHS Compliant

SILICON

±5%

-

8541.10.00.50

ZENER

WRAP AROUND

-

MIL-19500/356H

-

-

Single

ZENER DIODE

5μA @ 11.4V

5μA

3.5Ohm

15V

-

5%

-

5W

225

20

UNIDIRECTIONAL

1.5V @ 1A

15V

75mA

5%

-

-

-

-

-

-

-

-

-

-

-

-

-

JANS2N5416UA vs JANS1N4962US
JANS1N5806US

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

24 Weeks

Surface Mount

Surface Mount

SQ-MELF, A

2

-

-

Bulk

Military, MIL-PRF-19500/477

1997

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

END

Qualified

1

-

ISOLATED

-

-

-

-

-

-

-

-

-

-

-

No

Non-RoHS Compliant

SILICON

-

HIGH RELIABILITY

8541.10.00.80

-

WRAP AROUND

-

MIL-19500

-

3W

Single

Standard

1μA @ 150V

-

-

-

-

-

-

-

-

-

-

875mV @ 1A

-

-

-

175°C

-65°C

Fast Recovery =< 500ns, > 200mA (Io)

-65°C~175°C

1A

975mV

150V

1A

25 ns

1μA

150V

25pF @ 10V 1MHz

35A

JANS2N5416UA vs JANS1N5806US