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JANS1N5806US

Microsemi Corporation JANS1N5806US

Part Number:
JANS1N5806US
Manufacturer:
Microsemi Corporation
Ventron No:
2825224-JANS1N5806US
Description:
DIODE GEN PURP 150V 1A D5A
ECAD Model:
Datasheet:
JANS1N5806US

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Specifications
Microsemi Corporation JANS1N5806US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANS1N5806US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    24 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, A
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/477
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.10.00.80
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Reference Standard
    MIL-19500
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    3W
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    1μA @ 150V
  • Voltage - Forward (Vf) (Max) @ If
    875mV @ 1A
  • Case Connection
    ISOLATED
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    1A
  • Forward Voltage
    975mV
  • Max Reverse Voltage (DC)
    150V
  • Average Rectified Current
    1A
  • Reverse Recovery Time
    25 ns
  • Peak Reverse Current
    1μA
  • Max Repetitive Reverse Voltage (Vrrm)
    150V
  • Capacitance @ Vr, F
    25pF @ 10V 1MHz
  • Peak Non-Repetitive Surge Current
    35A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANS1N5806US Overview
As a result, this device has a rectified current of 1A volts on average.Using the output current as an example, 1A is the maximum value.Based on the data charts in the datasheets, the peak reverse is 1μA.

JANS1N5806US Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 1μA


JANS1N5806US Applications
There are a lot of Microsemi Corporation
JANS1N5806US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JANS1N5806US More Descriptions
Rectifier Diode Switching 150V 2.5A 25ns 2-Pin A-MELF Waffle
Diode Ultra Fast Recovery 150V 1A 2-Pin Case A Waffle Pack
Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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