Microsemi Corporation JANS2N3637UB

Name: JANS2N3637UB
Brand: Microsemi Corporation
SKU: 2848442-JANS2N3637UB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANS2N3637UB

Manufacturer:: Microsemi Corporation

Ventron No:: 2848442-JANS2N3637UB

Description:: TRANS PNP 175V 1A

ECAD Model:

Datasheet:: JANS2N3637UB

Specifications

Microsemi Corporation JANS2N3637UB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANS2N3637UB.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/357
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
1.5W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
175V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Collector Base Voltage (VCBO)
175V
Turn Off Time-Max (toff)
650ns
Turn On Time-Max (ton)
200ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

JANS2N3637UB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.During maximum operation, collector current can be as low as 1A volts.

JANS2N3637UB Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA

JANS2N3637UB Applications
There are a lot of Microsemi Corporation
JANS2N3637UB applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JANS2N3637UB More Descriptions

Trans GP BJT PNP 175V 1A 3-Pin SMD Waffle Pack
Small-Signal BJT _ UB
Compliant Surface Mount Bulk 3 Production (Last Updated: 2 months ago) No 1 A 1 W
JANS2N3637UB --

Product Comparison

The three parts on the right have similar specifications to JANS2N3637UB.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Max Power Dissipation

Terminal Position

Pin Count

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Base Voltage (VCBO)

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Radiation Hardening

RoHS Status

Factory Lead Time

Diode Element Material

Published

Tolerance

Additional Feature

Technology

Terminal Form

Reference Standard

JESD-30 Code

Power Dissipation-Max

Element Configuration

Diode Type

Current - Reverse Leakage @ Vr

Case Connection

Max Reverse Leakage Current

Impedance-Max

Reference Voltage

Voltage - Zener (Nom) (Vz)

Voltage Tol-Max

Voltage Temp Coeff-Max

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Polarity

Voltage - Forward (Vf) (Max) @ If

Zener Voltage

Working Test Current

Voltage Tolerance

Max Operating Temperature

Min Operating Temperature

Speed

Operating Temperature - Junction

Output Current-Max

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

View Compare
JANS2N3637UB

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

Surface Mount

Surface Mount

3-SMD, No Lead

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/357

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

8541.29.00.95

Other Transistors

1W

DUAL

3

Qualified

1

SINGLE

1.5W

SWITCHING

PNP

PNP

175V

1A

100 @ 50mA 10V

10μA

600mV @ 5mA, 50mA

175V

650ns

200ns

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
JANS1N4568AUR-1

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

Surface Mount

Surface Mount

DO-213AA

-

-

-65°C~175°C

Bulk

-

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

8541.10.00.50

-

-

END

2

Qualified

1

-

500mW

-

-

-

-

-

-

-

-

-

-

-

No

Non-RoHS Compliant

40 Weeks

SILICON

1999

±5%

METALLURGICALLY BONDED

ZENER

WRAP AROUND

MIL-19500/452

O-LELF-R2

0.5W

Single

ZENER DIODE

2μA @ 3V

ISOLATED

2μA

200Ohm

6.4V

6.4V

5%

0.064mV/°C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

JANS2N3637UB vs JANS1N4568AUR-1
JANS1N4962US

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

Surface Mount

Surface Mount

SQ-MELF, B

2

-

-65°C~175°C

Bulk

-

e0

-

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

8541.10.00.50

-

5W

END

-

Qualified

1

-

-

-

-

-

-

-

-

-

-

-

-

-

No

Non-RoHS Compliant

40 Weeks

SILICON

1999

±5%

-

ZENER

WRAP AROUND

MIL-19500/356H

-

-

Single

ZENER DIODE

5μA @ 11.4V

ISOLATED

5μA

3.5Ohm

15V

-

5%

-

225

20

UNIDIRECTIONAL

1.5V @ 1A

15V

75mA

5%

-

-

-

-

-

-

-

-

-

-

-

-

-

JANS2N3637UB vs JANS1N4962US
JANS1N5806US

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

Surface Mount

Surface Mount

SQ-MELF, A

2

-

-

Bulk

Military, MIL-PRF-19500/477

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

8541.10.00.80

-

-

END

-

Qualified

1

-

-

-

-

-

-

-

-

-

-

-

-

-

No

Non-RoHS Compliant

24 Weeks

SILICON

1997

-

HIGH RELIABILITY

-

WRAP AROUND

MIL-19500

-

3W

Single

Standard

1μA @ 150V

ISOLATED

-

-

-

-

-

-

-

-

-

875mV @ 1A

-

-

-

175°C

-65°C

Fast Recovery =< 500ns, > 200mA (Io)

-65°C~175°C

1A

975mV

150V

1A

25 ns

1μA

150V

25pF @ 10V 1MHz

35A

JANS2N3637UB vs JANS1N5806US