Microsemi Corporation JAN2N3741
- Part Number:
- JAN2N3741
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466393-JAN2N3741
- Description:
- TRANS PNP 80V 4A TO-66
- ECAD Model:
-
- Datasheet:
- JAN2N3741
Microsemi Corporation JAN2N3741 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N3741.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time22 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-213AA, TO-66-2
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/441
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation25W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation25W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 250mA 1V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic600mV @ 125mA, 1A
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N3741 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 250mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 125mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 4A volts at its maximum.
JAN2N3741 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 125mA, 1A
the emitter base voltage is kept at 7V
JAN2N3741 Applications
There are a lot of Microsemi Corporation
JAN2N3741 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 250mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 125mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 4A volts at its maximum.
JAN2N3741 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 125mA, 1A
the emitter base voltage is kept at 7V
JAN2N3741 Applications
There are a lot of Microsemi Corporation
JAN2N3741 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N3741 More Descriptions
Power Silicon Transistor 80V 4A 2-Pin TO-213AA
Trans GP BJT PNP 80V 4A 3-Pin(2 Tab) TO-66
Power Bjt To-66 Rohs Compliant: Yes |Microchip JAN2N3741
Trans GP BJT PNP 80V 4A 3-Pin(2 Tab) TO-66
Power Bjt To-66 Rohs Compliant: Yes |Microchip JAN2N3741
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
09 April 2024
TPS82085SILR Characteristics, Specifications, Application Cases and More
Ⅰ. What is TPS82085SILR?Ⅱ. Characteristics of TPS82085SILRⅢ. Device functional modesⅣ. Specifications of TPS82085SILRⅤ. Thermal consideration of TPS82085SILRⅥ. What advanced technologies does TPS82085SILR use?Ⅶ. Competitive product analysis of TPS82085SILRⅧ.... -
09 April 2024
INA826AIDR Layout and Selection Guide
Ⅰ. Description of INA826AIDRⅡ. Pin configuration and functionsⅢ. Functional features of INA826AIDRⅣ. What impact does external resistance have on the stability of INA826AIDR?Ⅴ. Schematic diagram and working principle... -
10 April 2024
LM2904DT Dual Operational Amplifier: Features, Package and Specifications
Ⅰ. Overview of LM2904DTⅡ. Electrical characteristic curvesⅢ. Features of LM2904DTⅣ. Package of LM2904DTⅤ. Supply voltage and current requirements of LM2904DTⅥ. Specifications of LM2904DTⅦ. How to use LM2904DT in... -
10 April 2024
STM32F103CBT6 Microcontroller Features, Application and STM32F103CBT6 vs CKS32F103C8T6
Ⅰ. Description of STM32F103CBT6Ⅱ. Low-power modes of STM32F103CBT6Ⅲ. Functional features of STM32F103CBT6Ⅳ. Application fields of STM32F103CBT6Ⅴ. GPIO attributes and configuration process of STM32F103CBT6Ⅵ. How to program and debug...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.