IXYS IXTH160N10T
- Part Number:
- IXTH160N10T
- Manufacturer:
- IXYS
- Ventron No:
- 2848870-IXTH160N10T
- Description:
- MOSFET N-CH 100V 160A TO-247
- Datasheet:
- IXTH160N10T
IXYS IXTH160N10T technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTH160N10T.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesTrenchMV™
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance7MOhm
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max430W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation430W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds6600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C160A Tc
- Gate Charge (Qg) (Max) @ Vgs132nC @ 10V
- Rise Time61ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)42 ns
- Turn-Off Delay Time49 ns
- Continuous Drain Current (ID)160A
- JEDEC-95 CodeTO-247AD
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)430A
- Avalanche Energy Rating (Eas)500 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXTH160N10T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6600pF @ 25V.This device conducts a continuous drain current (ID) of 160A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 49 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 430A.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH160N10T Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 430A.
IXTH160N10T Applications
There are a lot of IXYS
IXTH160N10T applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6600pF @ 25V.This device conducts a continuous drain current (ID) of 160A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 49 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 430A.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH160N10T Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 430A.
IXTH160N10T Applications
There are a lot of IXYS
IXTH160N10T applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXTH160N10T More Descriptions
Trans MOSFET N-CH 100V 160A Automotive 3-Pin(3 Tab) TO-247
Single N-Channel 100 V 430 W 132 nC Power Mosfet Flange Mount - TO-247
OEMs, CMs ONLY (NO BROKERS)
Contact for details
Single N-Channel 100 V 430 W 132 nC Power Mosfet Flange Mount - TO-247
OEMs, CMs ONLY (NO BROKERS)
Contact for details
The three parts on the right have similar specifications to IXTH160N10T.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeTerminal PositionConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinMax Power DissipationDrain to Source ResistanceNumber of PinsGate to Source Voltage (Vgs)View Compare
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IXTH160N10T8 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~175°C TJTubeTrenchMV™2006e1yesActive1 (Unlimited)3EAR997MOhmTin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowersMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3R-PSFM-T3Not Qualified1430W TcSingleENHANCEMENT MODE430WDRAINN-ChannelSWITCHING7m Ω @ 25A, 10V4.5V @ 250μA6600pF @ 25V160A Tc132nC @ 10V61ns10V±30V42 ns49 ns160ATO-247AD100V430A500 mJROHS3 CompliantLead Free----------
-
28 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeTrenchP™2012--Active1 (Unlimited)3EAR99--AVALANCHE RATEDOther TransistorsMOSFET (Metal Oxide)--3R-PSFM-T3-1568W Tc-ENHANCEMENT MODE-DRAINP-ChannelSWITCHING12m Ω @ 70A, 10V4V @ 250μA31400pF @ 25V140A Tc400nC @ 10V-10V±15V--140ATO-247AD-400A2000 mJROHS3 Compliant-SINGLESINGLE WITH BUILT-IN DIODE100V0.012Ohm100V----
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-Through HoleThrough HoleTO-247-3--Tube-2010--Active1 (Unlimited)------MOSFET (Metal Oxide)-------Single-300W-N-Channel----12A Tc------12A-1kV--ROHS3 Compliant---1000V--300W1.05Ohm--
-
53 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTube-2002-yesActive1 (Unlimited)3----FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED--Not Qualified160W TcSingleENHANCEMENT MODE60WDRAINN-ChannelSWITCHING11 Ω @ 1A, 10V4.5V @ 25μA480pF @ 25V1.5A Tc23nC @ 10V19ns10V±20V18 ns20 ns1.5ATO-247AD1kV6A200 mJROHS3 Compliant---1000V----320V
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