IXYS IXFM67N10

Name: IXFM67N10
Brand: IXYS
SKU: 5524359-IXFM67N10
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXFM67N10

Manufacturer:: IXYS

Ventron No:: 5524359-IXFM67N10

Description:: HIPERFET Power MOSFTETs

ECAD Model:

Datasheet:: IXFM67N10

Specifications

IXYS IXFM67N10 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFM67N10.

Mounting Type
Through Hole
Package / Case
TO-204AE
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HiPerFET™
Published
2012
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
25m Ω @ 33.5A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds
4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
67A Tc
Gate Charge (Qg) (Max) @ Vgs
260nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
67A
Drain-source On Resistance-Max
0.025Ohm
Pulsed Drain Current-Max (IDM)
268A
DS Breakdown Voltage-Min
100V
RoHS Status
ROHS3 Compliant

Description

IXFM67N10 Overview
A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 67A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 268A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFM67N10 Features
based on its rated peak drain current 268A.
a 100V drain to source voltage (Vdss)

IXFM67N10 Applications
There are a lot of IXYS
IXFM67N10 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IXFM67N10 More Descriptions

POWER MOSFET TO-3

Certification