IXYS IXFM10N90 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFM10N90.
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.1 Ω @ 5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds4200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs155nC @ 10V
- Drain to Source Voltage (Vdss)900V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)10A
- Pulsed Drain Current-Max (IDM)40A
- DS Breakdown Voltage-Min900V
- RoHS StatusROHS3 Compliant
IXFM10N90 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4200pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 10A.There is a peak drain current of 40A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 900V, it should remain above the 900V level.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFM10N90 Features
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)
IXFM10N90 Applications
There are a lot of IXYS
IXFM10N90 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4200pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 10A.There is a peak drain current of 40A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 900V, it should remain above the 900V level.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFM10N90 Features
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)
IXFM10N90 Applications
There are a lot of IXYS
IXFM10N90 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IXFM10N90 More Descriptions
POWER MOSFET TO-3
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