IXYS IXFM35N30

Name: IXFM35N30
Brand: IXYS
SKU: 5524371-IXFM35N30
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXFM35N30

Manufacturer:: IXYS

Ventron No:: 5524371-IXFM35N30

Description:: HiPerFET Power MOSFETs

ECAD Model:

Datasheet:: IXFM35N30

Specifications

IXYS IXFM35N30 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFM35N30.

Mounting Type
Through Hole
Package / Case
TO-204AE
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HiPerFET™
Published
2000
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds
4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
35A Tc
Gate Charge (Qg) (Max) @ Vgs
200nC @ 10V
Drain to Source Voltage (Vdss)
300V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
35A
Drain-source On Resistance-Max
0.1Ohm
Pulsed Drain Current-Max (IDM)
140A
DS Breakdown Voltage-Min
300V
RoHS Status
ROHS3 Compliant

Description

IXFM35N30 Overview
A device's maximum input capacitance is 4800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 35A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 140A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 300V.To operate this transistor, you need to apply a 300V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFM35N30 Features
based on its rated peak drain current 140A.
a 300V drain to source voltage (Vdss)

IXFM35N30 Applications
There are a lot of IXYS
IXFM35N30 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

IXFM35N30 More Descriptions

Power Field-Effect Transistor, 35A I(D), 300V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
POWER MOSFET TO-3

Certification