ISSI, Integrated Silicon Solution Inc IS61WV25616EDBLL-10TLI-TR
- Part Number:
- IS61WV25616EDBLL-10TLI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3232017-IS61WV25616EDBLL-10TLI-TR
- Description:
- IC SRAM 4MBIT 10NS 44TSOP
- ECAD Model:
-
- Datasheet:
- IS61WV25616EDBLL-10TLI-TR
ISSI, Integrated Silicon Solution Inc IS61WV25616EDBLL-10TLI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61WV25616EDBLL-10TLI-TR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Number of Pins44
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Terminal FinishMATTE TIN
- TechnologySRAM - Asynchronous
- Voltage - Supply2.4V~3.6V
- Peak Reflow Temperature (Cel)225
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Memory Size4Mb 256K x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page10ns
- RoHS StatusROHS3 Compliant
IS61WV25616EDBLL-10TLI-TR Overview
The package or case of the component is 44-TSOP with dimensions of 0.400 and a width of 10.16mm. It is also important to note that the component is Pbfree, meaning it does not contain any lead. The Moisture Sensitivity Level (MSL) of the component is 3, which indicates that it can withstand exposure to moisture for up to 168 hours without any damage. The terminal finish of the component is MATTE TIN, which provides a smooth and durable surface for the component. The technology used for this component is SRAM - Asynchronous, which allows for high-speed data transfer. The voltage supply for this component ranges from 2.4V to 3.6V, making it suitable for various applications. The memory type is volatile, meaning it requires power to retain data. The memory interface is parallel, allowing for efficient communication with other components. The write cycle time for this component is 10ns, ensuring fast and reliable data transfer. Lastly, it is important to note that this component is ROHS3 compliant, meaning it is environmentally friendly and does not contain any hazardous substances.
IS61WV25616EDBLL-10TLI-TR Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
IS61WV25616EDBLL-10TLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV25616EDBLL-10TLI-TR Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
The package or case of the component is 44-TSOP with dimensions of 0.400 and a width of 10.16mm. It is also important to note that the component is Pbfree, meaning it does not contain any lead. The Moisture Sensitivity Level (MSL) of the component is 3, which indicates that it can withstand exposure to moisture for up to 168 hours without any damage. The terminal finish of the component is MATTE TIN, which provides a smooth and durable surface for the component. The technology used for this component is SRAM - Asynchronous, which allows for high-speed data transfer. The voltage supply for this component ranges from 2.4V to 3.6V, making it suitable for various applications. The memory type is volatile, meaning it requires power to retain data. The memory interface is parallel, allowing for efficient communication with other components. The write cycle time for this component is 10ns, ensuring fast and reliable data transfer. Lastly, it is important to note that this component is ROHS3 compliant, meaning it is environmentally friendly and does not contain any hazardous substances.
IS61WV25616EDBLL-10TLI-TR Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
IS61WV25616EDBLL-10TLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61WV25616EDBLL-10TLI-TR Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
IS61WV25616EDBLL-10TLI-TR More Descriptions
4Mb, High-Speed/Low Power, Async with ECC, 256K x 16, 10ns, 2.4V-3.6V, 44 Pin TSOP II,
Active Volatile ROHS3Compliant Parallel ic memory -40C~85C TA 2.4V~3.6V 4Mb 256K x 16 10ns
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II T/R
IC SRAM 4MBIT PARALLEL 44TSOP II
SRAM 4Mb 512K x 8 10ns Async SRAM
Active Volatile ROHS3Compliant Parallel ic memory -40C~85C TA 2.4V~3.6V 4Mb 256K x 16 10ns
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II T/R
IC SRAM 4MBIT PARALLEL 44TSOP II
SRAM 4Mb 512K x 8 10ns Async SRAM
The three parts on the right have similar specifications to IS61WV25616EDBLL-10TLI-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Terminal FinishTechnologyVoltage - SupplyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Memory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSurface MountNumber of TerminationsECCN CodeAdditional FeatureHTS CodeTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchPin CountSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Clock FrequencyOrganizationMemory WidthMemory DensityAccess Time (Max)LengthHeight Seated (Max)WidthSupplier Device PackageMax Operating TemperatureMin Operating TemperatureOperating Supply VoltageInterfaceMax Supply VoltageMin Supply VoltageNumber of PortsNominal Supply CurrentAccess TimeAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningView Compare
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IS61WV25616EDBLL-10TLI-TR8 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)44-40°C~85°C TATape & Reel (TR)e3yesActive3 (168 Hours)MATTE TINSRAM - Asynchronous2.4V~3.6V225NOT SPECIFIED4Mb 256K x 16VolatileSRAMParallel10nsROHS3 Compliant------------------------------------ -
12 WeeksSurface Mount165-LBGA1650°C~70°C TATray--Active3 (168 Hours)-SRAM - Synchronous, DDR II1.71V~1.89VNOT SPECIFIEDNOT SPECIFIED72Mb 4M x 18VolatileSRAMParallel-ROHS3 CompliantYES1653A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41BOTTOM11.8V1mm1651.89V1.71V250MHz4MX181875497472 bit0.45 ns17mm1.4mm15mm---------------
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12 WeeksSurface Mount165-LBGA1650°C~70°C TATray--Active3 (168 Hours)-SRAM - Synchronous, DDR II1.71V~1.89VNOT SPECIFIEDNOT SPECIFIED72Mb 4M x 18VolatileSRAMParallel-ROHS3 CompliantYES1653A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41BOTTOM11.8V1mm1651.89V1.71V300MHz4MX181875497472 bit0.45 ns17mm1.4mm15mm---------------
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8 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)44-40°C~85°C TATape & Reel (TR)--Active2 (1 Year)-SRAM - Asynchronous4.5V~5.5V--4Mb 256K x 16VolatileSRAMParallel10nsROHS3 Compliant--------------------44-SOJ85°C-40°C5VParallel5.5V4.5V150mA10ns18b4 MbAsynchronous16bNo
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ISSI, Integrated Silicon Solution Inc
5V V Surface Mount 32 Pin Memory IC 4 Mb kb 20.75mm mm 15mA mA 8b b
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