ISSI, Integrated Silicon Solution Inc IS61NLP51236B-200TQLI
- Part Number:
- IS61NLP51236B-200TQLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3228828-IS61NLP51236B-200TQLI
- Description:
- IC SRAM 18MBIT 200MHZ 100TQFP
- Datasheet:
- IS61NLP51236B-200TQLI
ISSI, Integrated Silicon Solution Inc IS61NLP51236B-200TQLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61NLP51236B-200TQLI.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case100-LQFP
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations100
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply3.135V~3.465V
- Terminal PositionQUAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PQFP-G100
- Supply Voltage-Max (Vsup)3.465V
- Supply Voltage-Min (Vsup)3.135V
- Memory Size18Mb 512K x 36
- Memory TypeVolatile
- Clock Frequency200MHz
- Access Time3ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization512KX36
- Memory Width36
- Memory Density18874368 bit
- Height Seated (Max)1.6mm
- Length20mm
- Width14mm
- RoHS StatusROHS3 Compliant
IS61NLP51236B-200TQLI Overview
This product features a 100-LQFP package, ideal for applications requiring a compact and efficient design. The packaging is in tray form, providing ease of handling and storage during production. With a part status of active, this product is readily available for immediate use. The technology utilized is SRAM - Synchronous, SDR, ensuring fast and reliable data access. The terminal position is QUAD, allowing for efficient connection to other components. With a memory size of 18Mb 512K x 36 and a volatile memory type, this product offers ample space for storing and retrieving data. The access time of 3ns and memory density of 18874368 bit further enhance its performance. With a maximum seated height of 1.6mm, this product is suitable for various space-constrained applications.
IS61NLP51236B-200TQLI Features
Package / Case: 100-LQFP
IS61NLP51236B-200TQLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61NLP51236B-200TQLI Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
This product features a 100-LQFP package, ideal for applications requiring a compact and efficient design. The packaging is in tray form, providing ease of handling and storage during production. With a part status of active, this product is readily available for immediate use. The technology utilized is SRAM - Synchronous, SDR, ensuring fast and reliable data access. The terminal position is QUAD, allowing for efficient connection to other components. With a memory size of 18Mb 512K x 36 and a volatile memory type, this product offers ample space for storing and retrieving data. The access time of 3ns and memory density of 18874368 bit further enhance its performance. With a maximum seated height of 1.6mm, this product is suitable for various space-constrained applications.
IS61NLP51236B-200TQLI Features
Package / Case: 100-LQFP
IS61NLP51236B-200TQLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61NLP51236B-200TQLI Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
IS61NLP51236B-200TQLI More Descriptions
R-PQFP-G100 Surface Mount Tray 512KX36 ic memory 200MHz 3ns 14mm 18874368bit
SRAM Chip Sync Quad 3.3V 18M-Bit 512K x 36 3ns 100-Pin LQFP
3.135V~3.465V 18Mbit LQFP-100(14x20) SRAM ROHS
Synchronous SRAM, 512Kx36, 3.3V, QFP-100, RoHSISSI SCT
IC SRAM 18MBIT PARALLEL 100LQFP
18Mb,"no-Wait"/Pipeline,sync,512K X 36,200Mhz,3.3V/2.5V - I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61NLP51236B-200TQLI
SRAM Chip Sync Quad 3.3V 18M-Bit 512K x 36 3ns 100-Pin LQFP
3.135V~3.465V 18Mbit LQFP-100(14x20) SRAM ROHS
Synchronous SRAM, 512Kx36, 3.3V, QFP-100, RoHSISSI SCT
IC SRAM 18MBIT PARALLEL 100LQFP
18Mb,"no-Wait"/Pipeline,sync,512K X 36,200Mhz,3.3V/2.5V - I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61NLP51236B-200TQLI
The three parts on the right have similar specifications to IS61NLP51236B-200TQLI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthRoHS StatusNumber of PinsECCN CodeAdditional FeatureHTS CodePin CountAccess Time (Max)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureOperating Supply VoltageInterfaceMax Supply VoltageMin Supply VoltageNumber of PortsNominal Supply CurrentWrite Cycle Time - Word, PageAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningReach Compliance CodeView Compare
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IS61NLP51236B-200TQLI12 WeeksSurface Mount100-LQFPYES-40°C~85°C TATrayActive3 (168 Hours)100SRAM - Synchronous, SDR3.135V~3.465VQUADNOT SPECIFIED13.3V0.65mmNOT SPECIFIEDR-PQFP-G1003.465V3.135V18Mb 512K x 36Volatile200MHz3nsSRAMParallel512KX363618874368 bit1.6mm20mm14mmROHS3 Compliant-----------------------
-
12 WeeksSurface Mount165-LBGAYES0°C~70°C TATrayActive3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED-1.89V1.71V72Mb 4M x 18Volatile300MHz-SRAMParallel4MX181875497472 bit1.4mm17mm15mmROHS3 Compliant1653A991.B.2.APIPELINED ARCHITECTURE8542.32.00.411650.45 ns----------------
-
8 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)--40°C~85°C TATape & Reel (TR)Active2 (1 Year)-SRAM - Asynchronous4.5V~5.5V---------4Mb 256K x 16Volatile-10nsSRAMParallel------ROHS3 Compliant44-----44-SOJ85°C-40°C5VParallel5.5V4.5V150mA10ns18b4 MbAsynchronous16bNo-
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-Surface Mount165-LBGAYES-40°C~85°C TATrayLast Time Buy3 (168 Hours)165SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM-11.8V1mm-R-PBGA-B1651.89V1.71V72Mb 4M x 18Volatile300MHz1.48nsSRAMParallel4MX181875497472 bit1.4mm17mm15mm--3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41165----------------compliant
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