ISSI, Integrated Silicon Solution Inc IS61LV12824-10BL
- Part Number:
- IS61LV12824-10BL
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3235362-IS61LV12824-10BL
- Description:
- IC SRAM 3MBIT 10NS 119BGA
- Datasheet:
- IS61LV12824
ISSI, Integrated Silicon Solution Inc IS61LV12824-10BL technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61LV12824-10BL.
- Mounting TypeSurface Mount
- Package / Case119-BGA
- Surface MountYES
- Number of Pins119
- Operating Temperature0°C~70°C TA
- PackagingTray
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations119
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- TechnologySRAM - Asynchronous
- Voltage - Supply3.135V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3.3V
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count119
- Operating Supply Voltage3.3V
- Supply Voltage-Max (Vsup)3.63V
- Supply Voltage-Min (Vsup)2.97V
- Memory Size3Mb 128K x 24
- Number of Ports1
- Nominal Supply Current180mA
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Write Cycle Time - Word, Page10ns
- Address Bus Width17b
- Density3 Mb
- I/O TypeCOMMON
- Sync/AsyncAsynchronous
- Word Size24b
- Standby Voltage-Min3V
- Length22mm
- Width14mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IS61LV12824-10BL Overview
The operating temperature range for this product is from 0°C to 70°C, and it has a total of 119 terminations. The peak reflow temperature is 260 degrees Celsius. The memory interface is parallel and the output characteristics are 3-STATE. This product has a density of 3 Mb and an I/O type of COMMON. The minimum standby voltage is 3V and its length is 22mm. It is not designed for radiation hardening.
IS61LV12824-10BL Features
Package / Case: 119-BGA
119 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON
IS61LV12824-10BL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LV12824-10BL Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
The operating temperature range for this product is from 0°C to 70°C, and it has a total of 119 terminations. The peak reflow temperature is 260 degrees Celsius. The memory interface is parallel and the output characteristics are 3-STATE. This product has a density of 3 Mb and an I/O type of COMMON. The minimum standby voltage is 3V and its length is 22mm. It is not designed for radiation hardening.
IS61LV12824-10BL Features
Package / Case: 119-BGA
119 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON
IS61LV12824-10BL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LV12824-10BL Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
IS61LV12824-10BL More Descriptions
SRAM Chip Async Single 3.3V 3M-Bit 128K x 24-Bit 10ns 119-Pin BGA
e1 Surface Mount Tray SRAM - Asynchronous ic memory 10ns 14mm 180mA 3Mb
Standard SRAM, 128KX24, 10ns, CMOS, PBGA119
IC,IS61LV12824-10BL,3MB,HIGH-S PEED,ASYNC,128K X 24IC SRAM 3MBIT PARALLEL 119PBGA
e1 Surface Mount Tray SRAM - Asynchronous ic memory 10ns 14mm 180mA 3Mb
Standard SRAM, 128KX24, 10ns, CMOS, PBGA119
IC,IS61LV12824-10BL,3MB,HIGH-S PEED,ASYNC,128K X 24
The three parts on the right have similar specifications to IS61LV12824-10BL.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTime@Peak Reflow Temperature-Max (s)Pin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceOutput CharacteristicsWrite Cycle Time - Word, PageAddress Bus WidthDensityI/O TypeSync/AsyncWord SizeStandby Voltage-MinLengthWidthRadiation HardeningRoHS StatusLead FreeFactory Lead TimeECCN CodeAdditional FeatureHTS CodeTerminal PitchClock FrequencyOrganizationMemory WidthMemory DensityAccess Time (Max)Height Seated (Max)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureInterfaceMax Supply VoltageMin Supply VoltageAccess TimeReach Compliance CodeJESD-30 CodeView Compare
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IS61LV12824-10BLSurface Mount119-BGAYES1190°C~70°C TATraye1yesActive2 (1 Year)119Tin/Silver/Copper (Sn/Ag/Cu)SRAM - Asynchronous3.135V~3.6VBOTTOM26013.3V401193.3V3.63V2.97V3Mb 128K x 241180mAVolatileSRAMParallel3-STATE10ns17b3 MbCOMMONAsynchronous24b3V22mm14mmNoROHS3 CompliantLead Free---------------------
-
Surface Mount165-LBGAYES1650°C~70°C TATray--Active3 (168 Hours)165-SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8VNOT SPECIFIED165-1.89V1.71V72Mb 4M x 18--VolatileSRAMParallel--------17mm15mm-ROHS3 Compliant-12 Weeks3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.411mm300MHz4MX181875497472 bit0.45 ns1.4mm---------
-
Surface Mount44-BSOJ (0.400, 10.16mm Width)-44-40°C~85°C TATape & Reel (TR)--Active2 (1 Year)--SRAM - Asynchronous4.5V~5.5V------5V--4Mb 256K x 16150mAVolatileSRAMParallel-10ns18b4 Mb-Asynchronous16b---NoROHS3 Compliant-8 Weeks----------44-SOJ85°C-40°CParallel5.5V4.5V10ns--
-
Surface Mount165-LBGAYES--40°C~85°C TATray--Last Time Buy3 (168 Hours)165-SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM-11.8V-165-1.89V1.71V72Mb 4M x 18--VolatileSRAMParallel--------17mm15mm----3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.411mm300MHz4MX181875497472 bit-1.4mm------1.48nscompliantR-PBGA-B165
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