ISSI, Integrated Silicon Solution Inc IS46R86400D-6BLA1
- Part Number:
- IS46R86400D-6BLA1
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3235116-IS46R86400D-6BLA1
- Description:
- IC SDRAM 512MBIT 167MHZ 60BGA
- ECAD Model:
-
- Datasheet:
- IS43/46R(86400D,16320D,32160D)
ISSI, Integrated Silicon Solution Inc IS46R86400D-6BLA1 technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS46R86400D-6BLA1.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Surface MountYES
- Number of Pins60
- Operating Temperature-40°C~85°C TA
- PackagingTray
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.28
- TechnologySDRAM - DDR
- Voltage - Supply2.3V~2.7V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage2.5V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count60
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)2.7V
- Power Supplies2.5V
- Supply Voltage-Min (Vsup)2.3V
- Memory Size512Mb 64M x 8
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency166MHz
- Supply Current-Max0.37mA
- Access Time700ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width8b
- Organization64MX8
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.025A
- Memory Density536870912 bit
- Screening LevelAEC-Q100
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length248
- Interleaved Burst Length248
- Height Seated (Max)1.2mm
- Length13mm
- RoHS StatusROHS3 Compliant
IS46R86400D-6BLA1 Overview
The packaging for this particular product is a tray. It has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand exposure to moisture for up to 168 hours. The technology used in this product is SDRAM - DDR, which is a type of dynamic random-access memory. It has 1 function and a terminal pitch of 1mm. There is also 1 port for connecting to other devices. The memory interface is parallel, meaning data is transferred in parallel rather than serially. The organization of the memory is 64MX8, indicating that it has a capacity of 64 megabits and is organized in an 8-bit configuration. The maximum standby current for this product is 0.025A. It also has an interleaved burst length of 248, which refers to the number of data bits that can be transferred in a single burst.
IS46R86400D-6BLA1 Features
Package / Case: 60-TFBGA
60 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS46R86400D-6BLA1 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS46R86400D-6BLA1 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
The packaging for this particular product is a tray. It has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand exposure to moisture for up to 168 hours. The technology used in this product is SDRAM - DDR, which is a type of dynamic random-access memory. It has 1 function and a terminal pitch of 1mm. There is also 1 port for connecting to other devices. The memory interface is parallel, meaning data is transferred in parallel rather than serially. The organization of the memory is 64MX8, indicating that it has a capacity of 64 megabits and is organized in an 8-bit configuration. The maximum standby current for this product is 0.025A. It also has an interleaved burst length of 248, which refers to the number of data bits that can be transferred in a single burst.
IS46R86400D-6BLA1 Features
Package / Case: 60-TFBGA
60 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS46R86400D-6BLA1 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS46R86400D-6BLA1 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
IS46R86400D-6BLA1 More Descriptions
Automotive (-40 to 85C), 512M, 2.5v, DDR1, 64Mx8, 166MHz, 60 ball FBGA RoHS
DRAM Chip DDR SDRAM 512Mbit 64Mx8 2.5V Automotive 60-Pin TFBGA
IC DRAM 512MBIT PARALLEL 60TFBGA
DRAM Chip DDR SDRAM 512Mbit 64Mx8 2.5V Automotive 60-Pin TFBGA
IC DRAM 512MBIT PARALLEL 60TFBGA
The three parts on the right have similar specifications to IS46R86400D-6BLA1.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityScreening LevelI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRoHS StatusAddress Bus WidthDensityMax FrequencyOperating Supply VoltageMax Supply CurrentView Compare
-
IS46R86400D-6BLA110 WeeksSurface Mount60-TFBGAYES60-40°C~85°C TATraye1yesActive3 (168 Hours)60EAR99TIN SILVER COPPERAUTO/SELF REFRESH8542.32.00.28SDRAM - DDR2.3V~2.7VBOTTOM26012.5V1mm4060Not Qualified2.7V2.5V2.3V512Mb 64M x 81VolatileSYNCHRONOUS166MHz0.37mA700psDRAMParallel8b64MX83-STATE815ns0.025A536870912 bitAEC-Q100COMMON81922482481.2mm13mmROHS3 Compliant------ -
10 WeeksSurface Mount60-TFBGA-60-40°C~85°C TATray--Active3 (168 Hours)-----SDRAM - DDR2.3V~2.7V-----------512Mb 32M x 16-Volatile---700psDRAMParallel----15ns---------ROHS3 Compliant13b512 Mb200MHz--
-
10 WeeksSurface Mount60-TFBGAYES60-40°C~85°C TATray--Active3 (168 Hours)60--PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH-SDRAM - DDR2.3V~2.7VBOTTOMNOT SPECIFIED12.5V1mmNOT SPECIFIED--2.7V-2.3V512Mb 32M x 161VolatileSYNCHRONOUS--700psDRAMParallel-32MX16-1615ns-------1.2mm13mmROHS3 Compliant13b512 Mb166MHz--
-
-Surface Mount96-TFBGA-96-40°C~105°C TCTape & Reel (TR)--Not For New Designs3 (168 Hours)-----SDRAM - DDR31.283V~1.45V-----------2Gb 128M x 16-Volatile-800MHz-20nsDRAMParallel16b---15ns---------ROHS3 Compliant---1.35V285mA
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