ISSI, Integrated Silicon Solution Inc IS46R16320D-5BLA1-TR
- Part Number:
- IS46R16320D-5BLA1-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3235067-IS46R16320D-5BLA1-TR
- Description:
- IC SDRAM 512MBIT 200MHZ 60BGA
- ECAD Model:
-
- Datasheet:
- IS43/46R(86400D,16320D,32160D)
ISSI, Integrated Silicon Solution Inc IS46R16320D-5BLA1-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS46R16320D-5BLA1-TR.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Surface MountYES
- Number of Pins60
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- TechnologySDRAM - DDR
- Voltage - Supply2.5V~2.7V
- Terminal PositionBOTTOM
- Supply Voltage2.6V
- Terminal Pitch0.8mm
- Qualification StatusNot Qualified
- Power Supplies2.6V
- Memory Size512Mb 32M x 16
- Memory TypeVolatile
- Max Supply Current430mA
- Clock Frequency200MHz
- Access Time700ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization32MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.03A
- Memory Density536870912 bit
- Screening LevelAEC-Q100
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length248
- Interleaved Burst Length248
- RoHS StatusROHS3 Compliant
IS46R16320D-5BLA1-TR Overview
This product features a surface mount mounting type and is currently active. It has a voltage supply range of 2.5V to 2.7V and a terminal pitch of 0.8mm. The memory size is 512Mb, with a configuration of 32M x 16. The output characteristics are 3-STATE, providing efficient and reliable performance. With a write cycle time of 15ns for both word and page, this product offers fast and efficient data storage and retrieval. Its memory density is 536870912 bits, making it suitable for a wide range of applications. This product also meets the AEC-Q100 screening level and is ROHS3 compliant, ensuring its quality and environmental friendliness.
IS46R16320D-5BLA1-TR Features
Package / Case: 60-TFBGA
60 Pins
I/O Type: COMMON
IS46R16320D-5BLA1-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS46R16320D-5BLA1-TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
This product features a surface mount mounting type and is currently active. It has a voltage supply range of 2.5V to 2.7V and a terminal pitch of 0.8mm. The memory size is 512Mb, with a configuration of 32M x 16. The output characteristics are 3-STATE, providing efficient and reliable performance. With a write cycle time of 15ns for both word and page, this product offers fast and efficient data storage and retrieval. Its memory density is 536870912 bits, making it suitable for a wide range of applications. This product also meets the AEC-Q100 screening level and is ROHS3 compliant, ensuring its quality and environmental friendliness.
IS46R16320D-5BLA1-TR Features
Package / Case: 60-TFBGA
60 Pins
I/O Type: COMMON
IS46R16320D-5BLA1-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS46R16320D-5BLA1-TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS46R16320D-5BLA1-TR More Descriptions
Automotive (-40 To 85C), 512M, 2.5V, Ddr1, 32Mx16, 200Mhz, 60 Ball Fbga Rohs, T&r
DRAM Chip DDR SDRAM 512M-Bit 32M x 16 2.6V 60-Pin TFBGA T/R
IC DRAM 512MBIT PARALLEL 60TFBGA
DRAM 512M, 2.5V, 200Mhz 32Mx16 DDR1
DRAM Chip DDR SDRAM 512M-Bit 32M x 16 2.6V 60-Pin TFBGA T/R
IC DRAM 512MBIT PARALLEL 60TFBGA
DRAM 512M, 2.5V, 200Mhz 32Mx16 DDR1
The three parts on the right have similar specifications to IS46R16320D-5BLA1-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionSupply VoltageTerminal PitchQualification StatusPower SuppliesMemory SizeMemory TypeMax Supply CurrentClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityScreening LevelI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthRoHS StatusJESD-609 CodeECCN CodeTerminal FinishAdditional FeatureHTS CodePeak Reflow Temperature (Cel)Number of FunctionsTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeLengthHeight Seated (Max)WidthAddress Bus WidthDensityMax FrequencyView Compare
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IS46R16320D-5BLA1-TR10 WeeksSurface Mount60-TFBGAYES60-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)60SDRAM - DDR2.5V~2.7VBOTTOM2.6V0.8mmNot Qualified2.6V512Mb 32M x 16Volatile430mA200MHz700psDRAMParallel16b32MX163-STATE1615ns0.03A536870912 bitAEC-Q100COMMON8192248248ROHS3 Compliant-------------------- -
10 WeeksSurface Mount96-TFBGAYES--40°C~105°C TCTrayActive3 (168 Hours)96SDRAM - DDR31.425V~1.575VBOTTOM1.5V0.8mm--1Gb 64M x 16Volatile-667MHz20nsDRAMParallel-64MX16-1615ns-1073741824 bit-----ROHS3 Compliante1EAR99TIN SILVER COPPERAUTO/SELF REFRESH8542.32.00.32NOT SPECIFIED1NOT SPECIFIEDR-PBGA-B961.575V1.425V1SYNCHRONOUS13mm1.2mm9mm---
-
10 WeeksSurface Mount60-TFBGA-60-40°C~85°C TATrayActive3 (168 Hours)-SDRAM - DDR2.3V~2.7V-----512Mb 32M x 16Volatile--700psDRAMParallel----15ns-------ROHS3 Compliant----------------13b512 Mb200MHz
-
10 WeeksSurface Mount60-TFBGAYES60-40°C~85°C TATrayActive3 (168 Hours)60SDRAM - DDR2.3V~2.7VBOTTOM2.5V1mm--512Mb 32M x 16Volatile--700psDRAMParallel-32MX16-1615ns-------ROHS3 Compliant---PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH-NOT SPECIFIED1NOT SPECIFIED-2.7V2.3V1SYNCHRONOUS13mm1.2mm-13b512 Mb166MHz
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