ISSI, Integrated Silicon Solution Inc IS46DR16128C-3DBLA2
- Part Number:
- IS46DR16128C-3DBLA2
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3234656-IS46DR16128C-3DBLA2
- Description:
- IC SDRAM 2GBIT 333MHZ 84BGA
- ECAD Model:
-
- Datasheet:
- IS46DR16128C-3DBLA2
ISSI, Integrated Silicon Solution Inc IS46DR16128C-3DBLA2 technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS46DR16128C-3DBLA2.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case84-TFBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations84
- ECCN CodeEAR99
- Additional FeaturePROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PBGA-B84
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.9V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size2Gb 128M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency333MHz
- Supply Current-Max0.485mA
- Access Time450ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization128MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.03A
- Memory Density2147483648 bit
- Screening LevelAEC-Q100
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length48
- Interleaved Burst Length48
- Height Seated (Max)1.2mm
- Length12.5mm
- Width8mm
- RoHS StatusROHS3 Compliant
IS46DR16128C-3DBLA2 Overview
The package or case for this particular electronic component is 84-TFBGA, which stands for Thin Fine-Pitch Ball Grid Array. This package is commonly used for integrated circuits and has a rectangular shape with a grid of tiny balls on the bottom. The part status for this component is active, meaning it is currently in production and available for purchase. The terminal position is located on the bottom of the package, which is where the electrical connections are made. The JESD-30 code for this package is R-PBGA-B84, which provides specific information about the package dimensions and layout. This component has one port, and its standby current-max is 0.03A, indicating its power consumption when not in use. The sequential burst length and interleaved burst length are both 48, which refers to the number of data transfers that can occur in a single burst. The length of this component is 12.5mm, making it compact and suitable for various applications. Lastly, it is important to note that this component is ROHS3 compliant, meaning it is in compliance with the Restriction of Hazardous Substances Directive.
IS46DR16128C-3DBLA2 Features
Package / Case: 84-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
I/O Type: COMMON
IS46DR16128C-3DBLA2 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS46DR16128C-3DBLA2 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The package or case for this particular electronic component is 84-TFBGA, which stands for Thin Fine-Pitch Ball Grid Array. This package is commonly used for integrated circuits and has a rectangular shape with a grid of tiny balls on the bottom. The part status for this component is active, meaning it is currently in production and available for purchase. The terminal position is located on the bottom of the package, which is where the electrical connections are made. The JESD-30 code for this package is R-PBGA-B84, which provides specific information about the package dimensions and layout. This component has one port, and its standby current-max is 0.03A, indicating its power consumption when not in use. The sequential burst length and interleaved burst length are both 48, which refers to the number of data transfers that can occur in a single burst. The length of this component is 12.5mm, making it compact and suitable for various applications. Lastly, it is important to note that this component is ROHS3 compliant, meaning it is in compliance with the Restriction of Hazardous Substances Directive.
IS46DR16128C-3DBLA2 Features
Package / Case: 84-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
I/O Type: COMMON
IS46DR16128C-3DBLA2 Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS46DR16128C-3DBLA2 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
IS46DR16128C-3DBLA2 More Descriptions
DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V Automotive 84-Pin TW-BGA
EAR99 Surface Mount Tray 128MX16 ic memory 333MHz 450ps 8mm 0.03A
DDR SDRAM, 128Mx16, 1.8V, 8K, BGA-84,RoHSISSI SCT
DRAM Automotive 2G 1.8V DDR2 128Mx16 333MHz
IC DRAM 2GBIT PARALLEL 84TWBGA
Automotive (Tc: -40 To 105C),2G, 1.8V, Ddr2, 128Mx16, 333Mhz @ Cl5, 84 Ball Bga, (8Mm X 12.5Mm), Rohs |Integrated Silicon Solution (Issi) IS46DR16128C-3DBLA2
EAR99 Surface Mount Tray 128MX16 ic memory 333MHz 450ps 8mm 0.03A
DDR SDRAM, 128Mx16, 1.8V, 8K, BGA-84,RoHSISSI SCT
DRAM Automotive 2G 1.8V DDR2 128Mx16 333MHz
IC DRAM 2GBIT PARALLEL 84TWBGA
Automotive (Tc: -40 To 105C),2G, 1.8V, Ddr2, 128Mx16, 333Mhz @ Cl5, 84 Ball Bga, (8Mm X 12.5Mm), Rohs |Integrated Silicon Solution (Issi) IS46DR16128C-3DBLA2
The three parts on the right have similar specifications to IS46DR16128C-3DBLA2.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityScreening LevelI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusNumber of PinsAddress Bus WidthDensityMax FrequencyOperating Supply VoltageMax Supply CurrentData Bus WidthView Compare
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IS46DR16128C-3DBLA28 WeeksSurface Mount84-TFBGAYES-40°C~105°C TATrayActive3 (168 Hours)84EAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR21.7V~1.9VBOTTOM11.8V0.8mmR-PBGA-B84Not Qualified1.9V1.8V1.7V2Gb 128M x 161VolatileSYNCHRONOUS333MHz0.485mA450psDRAMParallel128MX163-STATE1615ns0.03A2147483648 bitAEC-Q100COMMON819248481.2mm12.5mm8mmROHS3 Compliant-------- -
10 WeeksSurface Mount60-TFBGA--40°C~85°C TATrayActive3 (168 Hours)---SDRAM - DDR2.3V~2.7V---------512Mb 32M x 16-Volatile---700psDRAMParallel---15ns----------ROHS3 Compliant6013b512 Mb200MHz---
-
-Surface Mount96-TFBGA--40°C~105°C TCTape & Reel (TR)Not For New Designs3 (168 Hours)---SDRAM - DDR31.283V~1.45V---------2Gb 128M x 16-Volatile-800MHz-20nsDRAMParallel---15ns----------ROHS3 Compliant96---1.35V285mA16b
-
10 WeeksSurface Mount60-TFBGA--40°C~105°C TATrayActive3 (168 Hours)---SDRAM - DDR2.3V~2.7V---------512Mb 32M x 16-Volatile---700psDRAMParallel---15ns----------ROHS3 Compliant6013b512 Mb166MHz---
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