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IS42S16800E-6BLI

ISSI, Integrated Silicon Solution Inc IS42S16800E-6BLI

Part Number:
IS42S16800E-6BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Ventron No:
3247578-IS42S16800E-6BLI
Description:
IC SDRAM 128MBIT 166MHZ 54TFBGA
ECAD Model:
Datasheet:
IS42S16800E, 81600E

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Specifications
ISSI, Integrated Silicon Solution Inc IS42S16800E-6BLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS42S16800E-6BLI.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    54-TFBGA
  • Number of Pins
    54
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    54
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    AUTO/SELF REFRESH
  • Technology
    SDRAM
  • Voltage - Supply
    3V~3.6V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    3.3V
  • Terminal Pitch
    0.8mm
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Pin Count
    54
  • Operating Supply Voltage
    3.3V
  • Supply Voltage-Max (Vsup)
    3.6V
  • Supply Voltage-Min (Vsup)
    3V
  • Memory Size
    128Mb 8M x 16
  • Number of Ports
    1
  • Nominal Supply Current
    150mA
  • Memory Type
    Volatile
  • Clock Frequency
    166MHz
  • Access Time
    5.4ns
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • Data Bus Width
    16b
  • Organization
    8MX16
  • Output Characteristics
    3-STATE
  • Memory Width
    16
  • Address Bus Width
    14b
  • Density
    128 Mb
  • Standby Current-Max
    0.002A
  • I/O Type
    COMMON
  • Refresh Cycles
    4096
  • Sequential Burst Length
    1248FP
  • Interleaved Burst Length
    1248
  • Height Seated (Max)
    1.2mm
  • Length
    8mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IS42S16800E-6BLI Overview
This product has an ECCN Code of EAR99, indicating that it is classified as an Export Administration Regulations (EAR)99 item and does not require a license for export. The terminal position is located at the bottom of the product. The maximum time for peak reflow temperature is 10 seconds. The maximum supply voltage is 3.6V, while the minimum supply voltage is 3V. The memory format is DRAM (Dynamic Random Access Memory). The output characteristics are 3-STATE, meaning the output can be in a high-impedance state. The product has a refresh cycle of 4096 and a sequential burst length of 1248FP. It also has an interleaved burst length of 1248.

IS42S16800E-6BLI Features
Package / Case: 54-TFBGA
54 Pins
Operating Supply Voltage:3.3V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON


IS42S16800E-6BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42S16800E-6BLI Memory applications.


Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
IS42S16800E-6BLI More Descriptions
DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TFBGA
IC SDRAM 128MBIT 166MHZ 54TFBGA
IC DRAM 128MBIT PARALLEL 54TFBGA
Product Comparison
The three parts on the right have similar specifications to IS42S16800E-6BLI.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Nominal Supply Current
    Memory Type
    Clock Frequency
    Access Time
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Output Characteristics
    Memory Width
    Address Bus Width
    Density
    Standby Current-Max
    I/O Type
    Refresh Cycles
    Sequential Burst Length
    Interleaved Burst Length
    Height Seated (Max)
    Length
    Radiation Hardening
    RoHS Status
    Surface Mount
    Qualification Status
    Power Supplies
    Supply Current-Max
    Memory Density
    HTS Code
    Operating Mode
    View Compare
  • IS42S16800E-6BLI
    IS42S16800E-6BLI
    ISSI, Integrated Silicon Solution Inc
    Surface Mount
    Surface Mount
    54-TFBGA
    54
    -40°C~85°C TA
    Tray
    e1
    yes
    Obsolete
    3 (168 Hours)
    54
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AUTO/SELF REFRESH
    SDRAM
    3V~3.6V
    BOTTOM
    260
    1
    3.3V
    0.8mm
    10
    54
    3.3V
    3.6V
    3V
    128Mb 8M x 16
    1
    150mA
    Volatile
    166MHz
    5.4ns
    DRAM
    Parallel
    16b
    8MX16
    3-STATE
    16
    14b
    128 Mb
    0.002A
    COMMON
    4096
    1248FP
    1248
    1.2mm
    8mm
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • IS42S32160C-6BI-TR
    IS42S32160C-6BI-TR
    ISSI, Integrated Silicon Solution Inc
    -
    Surface Mount
    90-LFBGA
    90
    -40°C~85°C TA
    Tape & Reel (TR)
    -
    -
    Obsolete
    3 (168 Hours)
    90
    -
    -
    -
    SDRAM
    3V~3.6V
    BOTTOM
    -
    -
    3.3V
    0.8mm
    -
    -
    -
    -
    -
    512Mb 16M x 32
    -
    -
    Volatile
    166MHz
    5.4ns
    DRAM
    Parallel
    32b
    16MX32
    3-STATE
    32
    -
    -
    0.004A
    COMMON
    8192
    1248FP
    1248
    -
    -
    -
    Non-RoHS Compliant
    YES
    Not Qualified
    3.3V
    0.3mA
    536870912 bit
    -
    -
    IS42S16800E-6BLI vs IS42S32160C-6BI-TR
  • IS42S16100F-6TLI
    IS42S16100F-6TLI
    ISSI, Integrated Silicon Solution Inc
    Surface Mount
    Surface Mount
    50-TSOP (0.400, 10.16mm Width)
    50
    -40°C~85°C TA
    Tray
    e3
    yes
    Obsolete
    3 (168 Hours)
    50
    EAR99
    MATTE TIN
    AUTO/SELF REFRESH
    SDRAM
    3V~3.6V
    DUAL
    260
    1
    3.3V
    0.8mm
    40
    50
    3.3V
    3.6V
    3V
    16Mb 1M x 16
    1
    110mA
    Volatile
    166MHz
    5.5ns
    DRAM
    Parallel
    16b
    1MX16
    3-STATE
    16
    12b
    16 Mb
    0.002A
    COMMON
    2048
    1248FP
    1248
    1.2mm
    20.95mm
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    8542.32.00.02
    -
    IS42S16800E-6BLI vs IS42S16100F-6TLI
  • IS42S16100E-6BLI
    IS42S16100E-6BLI
    ISSI, Integrated Silicon Solution Inc
    -
    Surface Mount
    60-TFBGA
    60
    -40°C~85°C TA
    Tray
    e1
    yes
    Obsolete
    3 (168 Hours)
    60
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AUTO/SELF REFRESH
    SDRAM
    3V~3.6V
    BOTTOM
    260
    1
    3.3V
    0.65mm
    10
    60
    -
    3.6V
    3V
    16Mb 1M x 16
    1
    -
    Volatile
    166MHz
    5.5ns
    DRAM
    Parallel
    16b
    1MX16
    3-STATE
    16
    -
    -
    0.004A
    COMMON
    2048
    1248FP
    1248
    1.2mm
    10.1mm
    -
    RoHS Compliant
    YES
    Not Qualified
    3.3V
    0.17mA
    -
    8542.32.00.02
    SYNCHRONOUS
    IS42S16800E-6BLI vs IS42S16100E-6BLI
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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