ISSI, Integrated Silicon Solution Inc IS42S16160G-7BLI-TR
- Part Number:
- IS42S16160G-7BLI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3228486-IS42S16160G-7BLI-TR
- Description:
- IC SDRAM 256MBIT 143MHZ 54BGA
- ECAD Model:
-
- Datasheet:
- IS4xS83200G, IS4x16160G
ISSI, Integrated Silicon Solution Inc IS42S16160G-7BLI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS42S16160G-7BLI-TR.
- Factory Lead Time6 Weeks
- Mounting TypeSurface Mount
- Package / Case54-TFBGA
- Surface MountYES
- Number of Pins54
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations54
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)10
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies3.3V
- Supply Voltage-Min (Vsup)3V
- Memory Size256Mb 16M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency143MHz
- Supply Current-Max0.13mA
- Access Time5.4ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization16MX16
- Output Characteristics3-STATE
- Memory Width16
- Standby Current-Max0.004A
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- Height Seated (Max)1.2mm
- Length8mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IS42S16160G-7BLI-TR Overview
The device in question has a total of 54 pins and can operate within a temperature range of -40°C to 85°C. It is packaged in Tape & Reel (TR) format and has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand 168 hours of exposure to moisture. The terminal pitch is 0.8mm and the maximum time it can be exposed to peak reflow temperature is 10 seconds. The data bus width is 16 bits and the memory width is also 16 bits. The maximum standby current is 0.004A and the I/O type is COMMON. These specifications make this device suitable for a variety of applications in various environments.
IS42S16160G-7BLI-TR Features
Package / Case: 54-TFBGA
54 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS42S16160G-7BLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42S16160G-7BLI-TR Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
The device in question has a total of 54 pins and can operate within a temperature range of -40°C to 85°C. It is packaged in Tape & Reel (TR) format and has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand 168 hours of exposure to moisture. The terminal pitch is 0.8mm and the maximum time it can be exposed to peak reflow temperature is 10 seconds. The data bus width is 16 bits and the memory width is also 16 bits. The maximum standby current is 0.004A and the I/O type is COMMON. These specifications make this device suitable for a variety of applications in various environments.
IS42S16160G-7BLI-TR Features
Package / Case: 54-TFBGA
54 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS42S16160G-7BLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42S16160G-7BLI-TR Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
IS42S16160G-7BLI-TR More Descriptions
EAR99 Surface Mount Tape & Reel (TR) 16MX16 ic memory 143MHz 5.4ns 8mm 0.004A
DRAM Chip SDRAM 256M-Bit 16M x 16 3.3V 54-Pin TFBGA T/R
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
DDR SDRAM, 16Mx16, 3.3V, 8K, BGA-54,RoHSISSI SCT
IC DRAM 256MBIT PARALLEL 54TFBGA
DRAM 256M 16Mx16 143Mhz SDRAM, 3.3v
256M, 3.3V, Sdram, 16Mx16, 143Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, It, T&r |Integrated Silicon Solution (Issi) IS42S16160G-7BLI-TR
DRAM Chip SDRAM 256M-Bit 16M x 16 3.3V 54-Pin TFBGA T/R
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
DDR SDRAM, 16Mx16, 3.3V, 8K, BGA-54,RoHSISSI SCT
IC DRAM 256MBIT PARALLEL 54TFBGA
DRAM 256M 16Mx16 143Mhz SDRAM, 3.3v
256M, 3.3V, Sdram, 16Mx16, 143Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, It, T&r |Integrated Silicon Solution (Issi) IS42S16160G-7BLI-TR
The three parts on the right have similar specifications to IS42S16160G-7BLI-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Qualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRoHS StatusLead FreePbfree CodeHTS CodePin CountMemory DensitySupplier Device PackageMax Operating TemperatureMin Operating TemperatureFrequencyInterfaceMax Supply VoltageMin Supply VoltageMax FrequencyView Compare
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IS42S16160G-7BLI-TR6 WeeksSurface Mount54-TFBGAYES54-40°C~85°C TATape & Reel (TR)e1Active3 (168 Hours)54EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESHSDRAM3V~3.6VBOTTOM26013.3V0.8mm10Not Qualified3.6V3.3V3V256Mb 16M x 161VolatileSYNCHRONOUS143MHz0.13mA5.4nsDRAMParallel16b16MX163-STATE160.004ACOMMON81921248FP12481.2mm8mmROHS3 CompliantLead Free------------- -
-Surface Mount90-TFBGAYES90-40°C~85°C TATraye0Obsolete3 (168 Hours)90EAR99Tin/Lead (Sn/Pb)AUTO/SELF REFRESHSDRAM3V~3.6VBOTTOMNOT SPECIFIED13.3V0.8mmNOT SPECIFIEDNot Qualified3.6V3.3V3V256Mb 8M x 321VolatileSYNCHRONOUS133MHz0.285mA5.5nsDRAMParallel32b8MX32-320.003ACOMMON40961248FP12481.2mm13mmNon-RoHS Compliant-no8542.32.00.2490268435456 bit--------
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-Surface Mount90-LFBGAYES90-40°C~85°C TATape & Reel (TR)-Obsolete3 (168 Hours)90---SDRAM3V~3.6VBOTTOM--3.3V0.8mm-Not Qualified-3.3V-512Mb 16M x 32-Volatile-166MHz0.3mA5.4nsDRAMParallel32b16MX323-STATE320.004ACOMMON81921248FP1248--Non-RoHS Compliant----536870912 bit--------
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-Surface Mount90-TFBGA-900°C~70°C TATape & Reel (TR)-Obsolete2 (1 Year)----SDRAM3V~3.6V----------256Mb 8M x 32-Volatile-166MHz-5.5nsDRAMParallel32b----------RoHS Compliant-----90-TFBGA (8x13)70°C0°C166MHzParallel3.6V3V166MHz
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ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 512 Mb kb 180mA mA
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