Infineon Technologies IRS21867STRPBF
- Part Number:
- IRS21867STRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3253811-IRS21867STRPBF
- Description:
- IC MOSFET DRIVER
- Datasheet:
- IRS21867STRPBF
Infineon Technologies IRS21867STRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRS21867STRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1996
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations8
- ECCN CodeEAR99
- SubcategoryMOSFET Drivers
- Max Power Dissipation625mW
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIRS21867SPBF
- Number of Outputs2
- Max Output Current4A
- Power Supplies15V
- Nominal Supply Current120μA
- Power Dissipation625mW
- Output Current4A
- Propagation Delay250 ns
- Input TypeCMOS, TTL
- Turn On Delay Time170 ns
- Rise Time22ns
- Fall Time (Typ)18 ns
- Turn-Off Delay Time170 ns
- Rise / Fall Time (Typ)22ns 18ns
- Channel TypeIndependent
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)4A 4A
- Max Junction Temperature (Tj)150°C
- Logic Voltage - VIL, VIH0.8V 2.5V
- Built-in ProtectionsTRANSIENT; OVER CURRENT; UNDER VOLTAGE
- High Side Voltage - Max (Bootstrap)600V
- Ambient Temperature Range High125°C
- Height1.75mm
- Length4.9mm
- Width3.9mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRS21867STRPBF Overview
For greater flexibility, the 8-SOIC (0.154, 3.90mm Width) package is adopted.The packaging method is indicated by Tape & Reel (TR).Ideally, it should be mounted in the direction of Surface Mount.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.IGBT, N-Channel MOSFET is the gate type used for this design.In this device, temperatures must not exceed -40°C~150°C TJ.Mosfet driver uses CMOS, TTL as Mosfet drivers input type.As a result of its configuration, it contains a maximum of 8 terminations.Numerous related parts are available for its base part number IRS21867SPBF.Devices are mounted by Surface Mount.As a result, it is configured with 8 pins when it is designed.This device operates with 15V supply voltage.As a maximum, there is 4A limit to the output current.Several electronic components are included in its subcategory of MOSFET Drivers.Mosfet driver is possible for the high-side voltage - Max (Bootstrap) to be as low as 600V.The basis of this model has 2 outputs integrated.The device is capable of delivering a current of 4A.Based on the maximum power dissipation of 625mW, it is clear that it is capable of transferring and conducting power losses without becoming overheated.Due to its power supplies of 15V, it solves the power supply problem for a wide range of applications.
IRS21867STRPBF Features
Embedded in the Tape & Reel (TR) package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IRS21867STRPBF Applications
There are a lot of Infineon Technologies IRS21867STRPBF gate drivers applications.
LCD/LCoS/DLP portable and embedded pico projectors
Solar inverters
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
White Goods - Air Conditioner, Washing Machine,
Active Clamp Flyback or Forward and Synchronous Rectifier
Commercial air-conditioning (CAC)
Active filtering
Welding
Topologies
Broadcast equipment
For greater flexibility, the 8-SOIC (0.154, 3.90mm Width) package is adopted.The packaging method is indicated by Tape & Reel (TR).Ideally, it should be mounted in the direction of Surface Mount.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.IGBT, N-Channel MOSFET is the gate type used for this design.In this device, temperatures must not exceed -40°C~150°C TJ.Mosfet driver uses CMOS, TTL as Mosfet drivers input type.As a result of its configuration, it contains a maximum of 8 terminations.Numerous related parts are available for its base part number IRS21867SPBF.Devices are mounted by Surface Mount.As a result, it is configured with 8 pins when it is designed.This device operates with 15V supply voltage.As a maximum, there is 4A limit to the output current.Several electronic components are included in its subcategory of MOSFET Drivers.Mosfet driver is possible for the high-side voltage - Max (Bootstrap) to be as low as 600V.The basis of this model has 2 outputs integrated.The device is capable of delivering a current of 4A.Based on the maximum power dissipation of 625mW, it is clear that it is capable of transferring and conducting power losses without becoming overheated.Due to its power supplies of 15V, it solves the power supply problem for a wide range of applications.
IRS21867STRPBF Features
Embedded in the Tape & Reel (TR) package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IRS21867STRPBF Applications
There are a lot of Infineon Technologies IRS21867STRPBF gate drivers applications.
LCD/LCoS/DLP portable and embedded pico projectors
Solar inverters
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
White Goods - Air Conditioner, Washing Machine,
Active Clamp Flyback or Forward and Synchronous Rectifier
Commercial air-conditioning (CAC)
Active filtering
Welding
Topologies
Broadcast equipment
IRS21867STRPBF More Descriptions
Tape & Reel (TR) IRS21867SPBF Half-Bridge 1996 gate driver 22ns 125C 4A 4A 625mW
600 V high-side and low-side gate driver IC, SOIC 8N, RoHSInfineon SCT
IRS21867S Series Dual 20 V 4 A Surface Mount High and Low Side Driver - SOIC-8
High and Low Side Driver has output source/sink current capability of 4A and 4A
Driver 600V 4A 2-OUT High and Low Side Non-Inv 8-Pin SOIC N T/R
DRIVER, IGBT / MOSFET, 4A, 8SOIC; Device Type:IGBT, MOSFET; Module Configuration:High and Low Side; Peak Output Current:4A; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:SOIC; No. of Pins:8; Input Delay:170ns; Output Delay:170ns; Operating Temperature Min:-40°C; Operating Temperature Max:125°C; MSL:-; SVHC:No SVHC (20-Jun-2013)
Igbt/Mosfet, 170 Ns, Soic-8; No. Of Channels:2Channels; Driver Configuration:High Side And Low Side; Power Switch Type:Mosfet; No. Of Pins:8Pins; Ic Case/Package:Soic; Input Type:-; Source Current:4A; Sink Current:4A Rohs Compliant: Yes |Infineon IRS21867STRPBF.
600 V High and Low Side Driver IC with typical 4 A source and 4 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Low VCC operation; Gate drive supply range from 5 V to 20 V; Undervoltage lockout for both channels; 3.3 V and 5 V input logic compatible; Matched propagation delay for both channels; Logic and power ground /- 5 V offset; Lower di/dt gate driver for better noise immunity; Output source/sink current capability 4.0 A (Typ.)
600 V high-side and low-side gate driver IC, SOIC 8N, RoHSInfineon SCT
IRS21867S Series Dual 20 V 4 A Surface Mount High and Low Side Driver - SOIC-8
High and Low Side Driver has output source/sink current capability of 4A and 4A
Driver 600V 4A 2-OUT High and Low Side Non-Inv 8-Pin SOIC N T/R
DRIVER, IGBT / MOSFET, 4A, 8SOIC; Device Type:IGBT, MOSFET; Module Configuration:High and Low Side; Peak Output Current:4A; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:SOIC; No. of Pins:8; Input Delay:170ns; Output Delay:170ns; Operating Temperature Min:-40°C; Operating Temperature Max:125°C; MSL:-; SVHC:No SVHC (20-Jun-2013)
Igbt/Mosfet, 170 Ns, Soic-8; No. Of Channels:2Channels; Driver Configuration:High Side And Low Side; Power Switch Type:Mosfet; No. Of Pins:8Pins; Ic Case/Package:Soic; Input Type:-; Source Current:4A; Sink Current:4A Rohs Compliant: Yes |Infineon IRS21867STRPBF.
600 V High and Low Side Driver IC with typical 4 A source and 4 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Low VCC operation; Gate drive supply range from 5 V to 20 V; Undervoltage lockout for both channels; 3.3 V and 5 V input logic compatible; Matched propagation delay for both channels; Logic and power ground /- 5 V offset; Lower di/dt gate driver for better noise immunity; Output source/sink current capability 4.0 A (Typ.)
The three parts on the right have similar specifications to IRS21867STRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationVoltage - SupplyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageBase Part NumberNumber of OutputsMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRise / Fall Time (Typ)Channel TypeDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Max Junction Temperature (Tj)Logic Voltage - VIL, VIHBuilt-in ProtectionsHigh Side Voltage - Max (Bootstrap)Ambient Temperature Range HighHeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeTerminal FinishTechnologyOutput VoltageMax Supply CurrentInput Offset Voltage (Vos)Release TimeInterface IC TypePeak Reflow Temperature (Cel)Reflow Temperature-Max (s)Qualification StatusNumber of DriversOutput Current Flow DirectionSeriesView Compare
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IRS21867STRPBF12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTape & Reel (TR)1996e3Active2 (1 Year)8EAR99MOSFET Drivers625mW10V~20VDUALGULL WING115VIRS21867SPBF24A15V120μA625mW4A250 nsCMOS, TTL170 ns22ns18 ns170 ns22ns 18nsIndependentHalf-BridgeIGBT, N-Channel MOSFET4A 4A150°C0.8V 2.5VTRANSIENT; OVER CURRENT; UNDER VOLTAGE600V125°C1.75mm4.9mm3.9mmNoNo SVHCROHS3 CompliantLead Free--------------
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12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTube1996e3Active2 (1 Year)8EAR99MOSFET Drivers625mW10V~20VDUALGULL WING115VIRS2011SPBF21A15V300μA625mW1A80 nsInverting20 ns40ns35 ns20 ns25ns 15nsIndependentHalf-BridgeN-Channel MOSFET1A 1A-0.8V 2.7VTRANSIENT; UNDER VOLTAGE--1.4986mm4.9784mm3.9878mmNoNo SVHCROHS3 CompliantLead FreeMatte Tin (Sn)CMOS220V300μA200V60 nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER------
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-Surface MountSurface Mount14-SOIC (0.154, 3.90mm Width)14-40°C~150°C TJTube1996e3Obsolete2 (1 Year)14EAR99Peripheral Drivers1W10V~20VDUALGULL WING-14VIRS210614SPBF-600mA-120μA1W-230 nsNon-Inverting230 ns100ns35 ns230 ns100ns 35nsIndependentHalf-BridgeIGBT, N-Channel MOSFET290mA 600mA-0.8V 2.5V-600V-1.5mm8.74mm3.99mm-No SVHCRoHS CompliantLead FreeTin (Sn)CMOS20V---BUFFER OR INVERTER BASED PERIPHERAL DRIVER26030Not Qualified2SOURCE SINK-
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18 WeeksSurface MountSurface MountSOT-23-66-40°C~125°C TJTape & Reel (TR)1996-Active1 (Unlimited)-EAR99-828mW10V~18V-----1240mA-----Non-Inverting-85ns40 ns-85ns 40nsSingleHigh-SideN-Channel MOSFET160mA 240mA-0.8V 2.2V-200V-1.3mm2.9mm1.6mm--ROHS3 CompliantLead Free------BUFFER OR INVERTER BASED MOSFET DRIVERNOT SPECIFIEDNOT SPECIFIED---µHVIC™
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