Infineon Technologies IRS2184STRPBF
- Part Number:
- IRS2184STRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3735453-IRS2184STRPBF
- Description:
- IC DVR HALF BRIDGE 8-SOIC
- Datasheet:
- IRS2184STRPBF
Infineon Technologies IRS2184STRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRS2184STRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1996
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryMOSFET Drivers
- Max Power Dissipation625mW
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIRS2184SPBF
- Output Voltage10V
- Max Output Current2.3A
- Power Supplies15V
- Nominal Supply Current1.6mA
- Power Dissipation625mW
- Output Current1.9A
- Max Supply Current1.6mA
- Propagation Delay900 ns
- Input TypeNon-Inverting
- Turn On Delay Time90 ns
- Rise Time60ns
- Fall Time (Typ)35 ns
- Turn-Off Delay Time40 ns
- Rise / Fall Time (Typ)40ns 20ns
- Channel TypeSynchronous
- Number of Drivers2
- Turn On Time0.9 μs
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)1.9A 2.3A
- Logic Voltage - VIL, VIH0.8V 2.5V
- Turn Off Time0.4 μs
- Built-in ProtectionsTRANSIENT; UNDER VOLTAGE
- High Side Voltage - Max (Bootstrap)600V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRS2184STRPBF Overview
The device in question has 8 pins and its part status is active, indicating that it is currently in production. It utilizes CMOS technology, which is known for its low power consumption and high noise immunity. The voltage supply range for this device is 10V to 20V, allowing for flexibility in power sources. It is capable of delivering a maximum output current of 2.3A, making it suitable for applications that require high current capabilities. The power supplies required for this device are 15V. The power dissipation of the device is 625mW, indicating the amount of power it consumes during operation. The turn on delay time is 90ns, which is the amount of time it takes for the device to fully activate after power is applied. The fall time, which is the time it takes for the output voltage to transition from a high state to a low state, is approximately 35ns. The device also features built-in protections against transient and under voltage conditions, ensuring its reliability and longevity.
IRS2184STRPBF Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IRS2184STRPBF Applications
There are a lot of Infineon Technologies IRS2184STRPBF gate drivers applications.
Solar power supplies
Isolated Supplies for Motor Control
UPS systems
Motor Drives
Broadcast equipment
Industrial Motor Inverter - Power Tools, Robotics
Welding
High current laser/LED systems
Motor Control
Motor Controls
The device in question has 8 pins and its part status is active, indicating that it is currently in production. It utilizes CMOS technology, which is known for its low power consumption and high noise immunity. The voltage supply range for this device is 10V to 20V, allowing for flexibility in power sources. It is capable of delivering a maximum output current of 2.3A, making it suitable for applications that require high current capabilities. The power supplies required for this device are 15V. The power dissipation of the device is 625mW, indicating the amount of power it consumes during operation. The turn on delay time is 90ns, which is the amount of time it takes for the device to fully activate after power is applied. The fall time, which is the time it takes for the output voltage to transition from a high state to a low state, is approximately 35ns. The device also features built-in protections against transient and under voltage conditions, ensuring its reliability and longevity.
IRS2184STRPBF Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IRS2184STRPBF Applications
There are a lot of Infineon Technologies IRS2184STRPBF gate drivers applications.
Solar power supplies
Isolated Supplies for Motor Control
UPS systems
Motor Drives
Broadcast equipment
Industrial Motor Inverter - Power Tools, Robotics
Welding
High current laser/LED systems
Motor Control
Motor Controls
IRS2184STRPBF More Descriptions
Tape & Reel (TR) IRS2184SPBF Half-Bridge 1996 gate driver 60ns -40C~150C TJ 1.9A 2.3A 625mW
600 V half-bridge gate driver IC with shutdown, SOIC 8N, RoHSInfineon SCT
Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin SOIC, T/R - Tape and Reel
IRS2184 Series Dual 20 V 2.3 A Surface Mount Half Bridge Driver - SOIC-8
MOSFET/IGBT DRIVER, HALF BRIDGE, SOIC-8; Driver Configuration: Half Bridge; Peak Output Current: 1.8A; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: SOIC; No. of Pins: 8Pins; Input Delay: 680ns; Output Delay: 270ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 2 - 1 year; SVHC: No SVHC (27-Jun-2018)
Surface Mount Tape & Reel (TR) Active EAR99 Gate Drivers ICs Non-Inverting 2 600V V 8-SOIC (0.154, 3.90mm Width) IRS2184SPBF Half-Bridge
IGBT Gate Driver IC; Device Type:High-Side; No. of Outputs:2; Output Voltage:620V; Output Current:2.3A; Source Output Current Max:1400mA; Sink Output Current:1800mA; Power Dissipation, Pd:0.625W; Supply Voltage Min:10V ;RoHS Compliant: Yes
600 V Half Bridge Driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PIDP, 14 Lead SOIC, 14 Lead PDIP, and 14 Lead MLPQ 4x4. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V and 5 V input logic compatible; Matched propagation delay for both channels; Logic and power ground /- 5 V offset; Lower di/dt gate driver for better noise immunity; Output source/sink current capability 1.4 A/1.8 A
600 V half-bridge gate driver IC with shutdown, SOIC 8N, RoHSInfineon SCT
Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin SOIC, T/R - Tape and Reel
IRS2184 Series Dual 20 V 2.3 A Surface Mount Half Bridge Driver - SOIC-8
MOSFET/IGBT DRIVER, HALF BRIDGE, SOIC-8; Driver Configuration: Half Bridge; Peak Output Current: 1.8A; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: SOIC; No. of Pins: 8Pins; Input Delay: 680ns; Output Delay: 270ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 2 - 1 year; SVHC: No SVHC (27-Jun-2018)
Surface Mount Tape & Reel (TR) Active EAR99 Gate Drivers ICs Non-Inverting 2 600V V 8-SOIC (0.154, 3.90mm Width) IRS2184SPBF Half-Bridge
IGBT Gate Driver IC; Device Type:High-Side; No. of Outputs:2; Output Voltage:620V; Output Current:2.3A; Source Output Current Max:1400mA; Sink Output Current:1800mA; Power Dissipation, Pd:0.625W; Supply Voltage Min:10V ;RoHS Compliant: Yes
600 V Half Bridge Driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PIDP, 14 Lead SOIC, 14 Lead PDIP, and 14 Lead MLPQ 4x4. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V and 5 V input logic compatible; Matched propagation delay for both channels; Logic and power ground /- 5 V offset; Lower di/dt gate driver for better noise immunity; Output source/sink current capability 1.4 A/1.8 A
The three parts on the right have similar specifications to IRS2184STRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageBase Part NumberOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRise / Fall Time (Typ)Channel TypeNumber of DriversTurn On TimeDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHTurn Off TimeBuilt-in ProtectionsHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeNumber of OutputsInput Offset Voltage (Vos)Release TimeInterface IC TypeREACH SVHCSeriesPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)View Compare
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IRS2184STRPBF12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTape & Reel (TR)1996e3Active2 (1 Year)8EAR99Matte Tin (Sn)MOSFET Drivers625mWCMOS10V~20VDUALGULL WING115VIRS2184SPBF10V2.3A15V1.6mA625mW1.9A1.6mA900 nsNon-Inverting90 ns60ns35 ns40 ns40ns 20nsSynchronous20.9 μsHalf-BridgeIGBT, N-Channel MOSFET1.9A 2.3A0.8V 2.5V0.4 μsTRANSIENT; UNDER VOLTAGE600V1.4986mm4.9784mm3.9878mmNoROHS3 CompliantLead Free---------
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12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTube1996e3Active2 (1 Year)8EAR99Matte Tin (Sn)MOSFET Drivers625mWCMOS10V~20VDUALGULL WING115VIRS2011SPBF220V1A15V300μA625mW1A300μA80 nsInverting20 ns40ns35 ns20 ns25ns 15nsIndependent--Half-BridgeN-Channel MOSFET1A 1A0.8V 2.7V-TRANSIENT; UNDER VOLTAGE-1.4986mm4.9784mm3.9878mmNoROHS3 CompliantLead Free2200V60 nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERNo SVHC---
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-Surface MountSurface Mount16-VFQFN Exposed Pad16-40°C~150°C TJTube2010-Obsolete2 (1 Year)-EAR99--2.08W-10V~20V----IRS2001MPBF15V600mA-150μA2.08W600mA-220 nsNon-Inverting50 ns70ns35 ns50 ns70ns 35nsIndependent2-Half-BridgeIGBT, N-Channel MOSFET290mA 600mA0.8V 2.5V--200V---NoRoHS Compliant----BUFFER OR INVERTER BASED PERIPHERAL DRIVERNo SVHC---
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18 WeeksSurface MountSurface MountSOT-23-66-40°C~125°C TJTape & Reel (TR)1996-Active1 (Unlimited)-EAR99--828mW-10V~18V------240mA------Non-Inverting-85ns40 ns-85ns 40nsSingle--High-SideN-Channel MOSFET160mA 240mA0.8V 2.2V--200V1.3mm2.9mm1.6mm-ROHS3 CompliantLead Free1--BUFFER OR INVERTER BASED MOSFET DRIVER-µHVIC™NOT SPECIFIEDNOT SPECIFIED
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