Infineon Technologies IRS2108PBF
- Part Number:
- IRS2108PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3256872-IRS2108PBF
- Description:
- IC DRIVER HALF-BRIDGE 8-DIP
- Datasheet:
- IRS2108PBF
Infineon Technologies IRS2108PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRS2108PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case8-DIP (0.300, 7.62mm)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- SubcategoryMOSFET Drivers
- Max Power Dissipation1W
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIRS2108PBF
- Number of Outputs2
- Output Voltage10V
- Max Output Current600mA
- Power Supplies15V
- Nominal Supply Current1.6mA
- Power Dissipation1W
- Output Current290mA
- Max Supply Current1.6mA
- Propagation Delay300 ns
- Input TypeInverting, Non-Inverting
- Turn On Delay Time30 ns
- Rise Time220ns
- Fall Time (Typ)80 ns
- Turn-Off Delay Time30 ns
- Rise / Fall Time (Typ)100ns 35ns
- Channel TypeIndependent
- Turn On Time0.3 μs
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)290mA 600mA
- Logic Voltage - VIL, VIH0.8V 2.5V
- Built-in ProtectionsTRANSIENT; UNDER VOLTAGE
- High Side Voltage - Max (Bootstrap)600V
- Height4.9276mm
- Length10.8966mm
- Width7.11mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRS2108PBF Overview
Its 8-DIP (0.300, 7.62mm) package is adopted for higher flexibility.Gate drivers is packaged in the way of Tube.Gate drivers is mounted in the way of Through Hole.In the absence of a power supply voltage of 10V~20V V, it is able to demonstrate its superiority.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.The allowable temperature range that this device can be operated in is -40°C~150°C TJ.Inverting, Non-Inverting is used as the input type.The configuration starts with 8 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number IRS2108PBF.Mosfet driver is mounted using Through Hole.The pins are configured with 8 when designing the chip.With a supply voltage of 15V, it is designed to operate.Mosfet driver is possible for the output current to be as low as 600mA.There are various useful electronic components in its subcategory MOSFET Drivers.Max (Bootstrap) can be as high as 600V.The basis of this system consists of 2 outputs.An output current of 290mA is supported.The maximum power dissipation of 1W shows its maximum capability to transfer and conduct power loss without overheating.As a precaution, make sure the supply current is kept at 1.6mA.Due to its power supply of 15V, it provides an effective solution to power supply problems for a wide range of applications.In this case, the voltage output is 10V.
IRS2108PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IRS2108PBF Applications
There are a lot of Infineon Technologies IRS2108PBF gate drivers applications.
Motor controllers
Video amplifiers
Active Clamp Flyback or Forward and Synchronous Rectifier
Refrigerator
Motor Control
Line drivers
3-Phase Motor Inverter Driver
Power factor correction (PFC) circuits
High current laser/LED systems
Topologies
Its 8-DIP (0.300, 7.62mm) package is adopted for higher flexibility.Gate drivers is packaged in the way of Tube.Gate drivers is mounted in the way of Through Hole.In the absence of a power supply voltage of 10V~20V V, it is able to demonstrate its superiority.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.The allowable temperature range that this device can be operated in is -40°C~150°C TJ.Inverting, Non-Inverting is used as the input type.The configuration starts with 8 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number IRS2108PBF.Mosfet driver is mounted using Through Hole.The pins are configured with 8 when designing the chip.With a supply voltage of 15V, it is designed to operate.Mosfet driver is possible for the output current to be as low as 600mA.There are various useful electronic components in its subcategory MOSFET Drivers.Max (Bootstrap) can be as high as 600V.The basis of this system consists of 2 outputs.An output current of 290mA is supported.The maximum power dissipation of 1W shows its maximum capability to transfer and conduct power loss without overheating.As a precaution, make sure the supply current is kept at 1.6mA.Due to its power supply of 15V, it provides an effective solution to power supply problems for a wide range of applications.In this case, the voltage output is 10V.
IRS2108PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IRS2108PBF Applications
There are a lot of Infineon Technologies IRS2108PBF gate drivers applications.
Motor controllers
Video amplifiers
Active Clamp Flyback or Forward and Synchronous Rectifier
Refrigerator
Motor Control
Line drivers
3-Phase Motor Inverter Driver
Power factor correction (PFC) circuits
High current laser/LED systems
Topologies
IRS2108PBF More Descriptions
600 V half-bridge gate driver IC with shoot through protection, PDIP8, RoHS
Tube IRS2108PBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 290mA 600mA 1W
Half-Bridge Gate Driver IC Inverting, Non-Inverting 8-PDIP
IRS2108 Series 600 V 290 mA 20 V Supply Dual Half Bridge Driver - PDIP-8
Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin PDIP, Tube
MOSFET DRVR 600V 0.6A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin PDIP Tube
HALF BRIDGE DRIVER, DIP8, 2108; Driver IC Type:MOSFET; No. of Outputs:2; Voltage, Output:620V; Output Current:290mA; Voltage, Supply Min:10V; Voltage, Supply Max:20V; Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; Temp, Op. Max:125°C; Temp, Op. Min:-40°C; Base Number:2108; Max Output Current:0.13A; Termination Type:Through Hole; Voltage, Output Max:20V
600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC (IRS21084S), and 14 Lead PDIP (IRS21084). | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High-side output in phase with HIN input; Low-side output out of phase with LIN input; Logic and power ground /- 5 V offset; Internal 540 ns deadtime; Lower di/dt gate driver for better noise immunity
Tube IRS2108PBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 290mA 600mA 1W
Half-Bridge Gate Driver IC Inverting, Non-Inverting 8-PDIP
IRS2108 Series 600 V 290 mA 20 V Supply Dual Half Bridge Driver - PDIP-8
Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin PDIP, Tube
MOSFET DRVR 600V 0.6A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin PDIP Tube
HALF BRIDGE DRIVER, DIP8, 2108; Driver IC Type:MOSFET; No. of Outputs:2; Voltage, Output:620V; Output Current:290mA; Voltage, Supply Min:10V; Voltage, Supply Max:20V; Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; Temp, Op. Max:125°C; Temp, Op. Min:-40°C; Base Number:2108; Max Output Current:0.13A; Termination Type:Through Hole; Voltage, Output Max:20V
600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC (IRS21084S), and 14 Lead PDIP (IRS21084). | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High-side output in phase with HIN input; Low-side output out of phase with LIN input; Logic and power ground /- 5 V offset; Internal 540 ns deadtime; Lower di/dt gate driver for better noise immunity
The three parts on the right have similar specifications to IRS2108PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageBase Part NumberNumber of OutputsOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRise / Fall Time (Typ)Channel TypeTurn On TimeDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHBuilt-in ProtectionsHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeJESD-609 CodeTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)Qualification StatusInterface IC TypeNumber of DriversOutput Current Flow DirectionREACH SVHCSeriesView Compare
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IRS2108PBF12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~150°C TJTube1996Active1 (Unlimited)8EAR99MOSFET Drivers1WCMOS10V~20VDUAL115VIRS2108PBF210V600mA15V1.6mA1W290mA1.6mA300 nsInverting, Non-Inverting30 ns220ns80 ns30 ns100ns 35nsIndependent0.3 μsHalf-BridgeIGBT, N-Channel MOSFET290mA 600mA0.8V 2.5VTRANSIENT; UNDER VOLTAGE600V4.9276mm10.8966mm7.11mmNoROHS3 CompliantLead Free------------
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-Surface MountSurface Mount14-SOIC (0.154, 3.90mm Width)14-40°C~150°C TJTube1996Obsolete2 (1 Year)14EAR99Peripheral Drivers1WCMOS10V~20VDUAL-14VIRS210614SPBF-20V600mA-120μA1W--230 nsNon-Inverting230 ns100ns35 ns230 ns100ns 35nsIndependent-Half-BridgeIGBT, N-Channel MOSFET290mA 600mA0.8V 2.5V-600V1.5mm8.74mm3.99mm-RoHS CompliantLead Freee3Tin (Sn)GULL WING26030Not QualifiedBUFFER OR INVERTER BASED PERIPHERAL DRIVER2SOURCE SINKNo SVHC-
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-Surface MountSurface Mount16-VFQFN Exposed Pad16-40°C~150°C TJTube2010Obsolete2 (1 Year)-EAR99-2.08W-10V~20V---IRS2001MPBF-15V600mA-150μA2.08W600mA-220 nsNon-Inverting50 ns70ns35 ns50 ns70ns 35nsIndependent-Half-BridgeIGBT, N-Channel MOSFET290mA 600mA0.8V 2.5V-200V---NoRoHS Compliant-------BUFFER OR INVERTER BASED PERIPHERAL DRIVER2-No SVHC-
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18 WeeksSurface MountSurface MountSOT-23-66-40°C~125°C TJTape & Reel (TR)1996Active1 (Unlimited)-EAR99-828mW-10V~18V----1-240mA------Non-Inverting-85ns40 ns-85ns 40nsSingle-High-SideN-Channel MOSFET160mA 240mA0.8V 2.2V-200V1.3mm2.9mm1.6mm-ROHS3 CompliantLead Free---NOT SPECIFIEDNOT SPECIFIED-BUFFER OR INVERTER BASED MOSFET DRIVER---µHVIC™
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