IRS2108PBF

Infineon Technologies IRS2108PBF

Part Number:
IRS2108PBF
Manufacturer:
Infineon Technologies
Ventron No:
3256872-IRS2108PBF
Description:
IC DRIVER HALF-BRIDGE 8-DIP
ECAD Model:
Datasheet:
IRS2108PBF

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Specifications
Infineon Technologies IRS2108PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRS2108PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    8-DIP (0.300, 7.62mm)
  • Number of Pins
    8
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Tube
  • Published
    1996
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Subcategory
    MOSFET Drivers
  • Max Power Dissipation
    1W
  • Technology
    CMOS
  • Voltage - Supply
    10V~20V
  • Terminal Position
    DUAL
  • Number of Functions
    1
  • Supply Voltage
    15V
  • Base Part Number
    IRS2108PBF
  • Number of Outputs
    2
  • Output Voltage
    10V
  • Max Output Current
    600mA
  • Power Supplies
    15V
  • Nominal Supply Current
    1.6mA
  • Power Dissipation
    1W
  • Output Current
    290mA
  • Max Supply Current
    1.6mA
  • Propagation Delay
    300 ns
  • Input Type
    Inverting, Non-Inverting
  • Turn On Delay Time
    30 ns
  • Rise Time
    220ns
  • Fall Time (Typ)
    80 ns
  • Turn-Off Delay Time
    30 ns
  • Rise / Fall Time (Typ)
    100ns 35ns
  • Channel Type
    Independent
  • Turn On Time
    0.3 μs
  • Driven Configuration
    Half-Bridge
  • Gate Type
    IGBT, N-Channel MOSFET
  • Current - Peak Output (Source, Sink)
    290mA 600mA
  • Logic Voltage - VIL, VIH
    0.8V 2.5V
  • Built-in Protections
    TRANSIENT; UNDER VOLTAGE
  • High Side Voltage - Max (Bootstrap)
    600V
  • Height
    4.9276mm
  • Length
    10.8966mm
  • Width
    7.11mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRS2108PBF Overview
Its 8-DIP (0.300, 7.62mm) package is adopted for higher flexibility.Gate drivers is packaged in the way of Tube.Gate drivers is mounted in the way of Through Hole.In the absence of a power supply voltage of 10V~20V V, it is able to demonstrate its superiority.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.The allowable temperature range that this device can be operated in is -40°C~150°C TJ.Inverting, Non-Inverting is used as the input type.The configuration starts with 8 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number IRS2108PBF.Mosfet driver is mounted using Through Hole.The pins are configured with 8 when designing the chip.With a supply voltage of 15V, it is designed to operate.Mosfet driver is possible for the output current to be as low as 600mA.There are various useful electronic components in its subcategory MOSFET Drivers.Max (Bootstrap) can be as high as 600V.The basis of this system consists of 2 outputs.An output current of 290mA is supported.The maximum power dissipation of 1W shows its maximum capability to transfer and conduct power loss without overheating.As a precaution, make sure the supply current is kept at 1.6mA.Due to its power supply of 15V, it provides an effective solution to power supply problems for a wide range of applications.In this case, the voltage output is 10V.

IRS2108PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W

IRS2108PBF Applications
There are a lot of Infineon Technologies IRS2108PBF gate drivers applications.

Motor controllers
Video amplifiers
Active Clamp Flyback or Forward and Synchronous Rectifier
Refrigerator
Motor Control
Line drivers
3-Phase Motor Inverter Driver
Power factor correction (PFC) circuits
High current laser/LED systems
Topologies
IRS2108PBF More Descriptions
600 V half-bridge gate driver IC with shoot through protection, PDIP8, RoHS
Tube IRS2108PBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 290mA 600mA 1W
Half-Bridge Gate Driver IC Inverting, Non-Inverting 8-PDIP
IRS2108 Series 600 V 290 mA 20 V Supply Dual Half Bridge Driver - PDIP-8
Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin PDIP, Tube
MOSFET DRVR 600V 0.6A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin PDIP Tube
HALF BRIDGE DRIVER, DIP8, 2108; Driver IC Type:MOSFET; No. of Outputs:2; Voltage, Output:620V; Output Current:290mA; Voltage, Supply Min:10V; Voltage, Supply Max:20V; Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; Temp, Op. Max:125°C; Temp, Op. Min:-40°C; Base Number:2108; Max Output Current:0.13A; Termination Type:Through Hole; Voltage, Output Max:20V
600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC (IRS21084S), and 14 Lead PDIP (IRS21084). | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High-side output in phase with HIN input; Low-side output out of phase with LIN input; Logic and power ground /- 5 V offset; Internal 540 ns deadtime; Lower di/dt gate driver for better noise immunity
Product Comparison
The three parts on the right have similar specifications to IRS2108PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Technology
    Voltage - Supply
    Terminal Position
    Number of Functions
    Supply Voltage
    Base Part Number
    Number of Outputs
    Output Voltage
    Max Output Current
    Power Supplies
    Nominal Supply Current
    Power Dissipation
    Output Current
    Max Supply Current
    Propagation Delay
    Input Type
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Rise / Fall Time (Typ)
    Channel Type
    Turn On Time
    Driven Configuration
    Gate Type
    Current - Peak Output (Source, Sink)
    Logic Voltage - VIL, VIH
    Built-in Protections
    High Side Voltage - Max (Bootstrap)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    JESD-609 Code
    Terminal Finish
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reflow Temperature-Max (s)
    Qualification Status
    Interface IC Type
    Number of Drivers
    Output Current Flow Direction
    REACH SVHC
    Series
    View Compare
  • IRS2108PBF
    IRS2108PBF
    12 Weeks
    Through Hole
    Through Hole
    8-DIP (0.300, 7.62mm)
    8
    -40°C~150°C TJ
    Tube
    1996
    Active
    1 (Unlimited)
    8
    EAR99
    MOSFET Drivers
    1W
    CMOS
    10V~20V
    DUAL
    1
    15V
    IRS2108PBF
    2
    10V
    600mA
    15V
    1.6mA
    1W
    290mA
    1.6mA
    300 ns
    Inverting, Non-Inverting
    30 ns
    220ns
    80 ns
    30 ns
    100ns 35ns
    Independent
    0.3 μs
    Half-Bridge
    IGBT, N-Channel MOSFET
    290mA 600mA
    0.8V 2.5V
    TRANSIENT; UNDER VOLTAGE
    600V
    4.9276mm
    10.8966mm
    7.11mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRS210614SPBF
    -
    Surface Mount
    Surface Mount
    14-SOIC (0.154, 3.90mm Width)
    14
    -40°C~150°C TJ
    Tube
    1996
    Obsolete
    2 (1 Year)
    14
    EAR99
    Peripheral Drivers
    1W
    CMOS
    10V~20V
    DUAL
    -
    14V
    IRS210614SPBF
    -
    20V
    600mA
    -
    120μA
    1W
    -
    -
    230 ns
    Non-Inverting
    230 ns
    100ns
    35 ns
    230 ns
    100ns 35ns
    Independent
    -
    Half-Bridge
    IGBT, N-Channel MOSFET
    290mA 600mA
    0.8V 2.5V
    -
    600V
    1.5mm
    8.74mm
    3.99mm
    -
    RoHS Compliant
    Lead Free
    e3
    Tin (Sn)
    GULL WING
    260
    30
    Not Qualified
    BUFFER OR INVERTER BASED PERIPHERAL DRIVER
    2
    SOURCE SINK
    No SVHC
    -
  • IRS2001MPBF
    -
    Surface Mount
    Surface Mount
    16-VFQFN Exposed Pad
    16
    -40°C~150°C TJ
    Tube
    2010
    Obsolete
    2 (1 Year)
    -
    EAR99
    -
    2.08W
    -
    10V~20V
    -
    -
    -
    IRS2001MPBF
    -
    15V
    600mA
    -
    150μA
    2.08W
    600mA
    -
    220 ns
    Non-Inverting
    50 ns
    70ns
    35 ns
    50 ns
    70ns 35ns
    Independent
    -
    Half-Bridge
    IGBT, N-Channel MOSFET
    290mA 600mA
    0.8V 2.5V
    -
    200V
    -
    -
    -
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    BUFFER OR INVERTER BASED PERIPHERAL DRIVER
    2
    -
    No SVHC
    -
  • IRS20752LTRPBF
    18 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    -40°C~125°C TJ
    Tape & Reel (TR)
    1996
    Active
    1 (Unlimited)
    -
    EAR99
    -
    828mW
    -
    10V~18V
    -
    -
    -
    -
    1
    -
    240mA
    -
    -
    -
    -
    -
    -
    Non-Inverting
    -
    85ns
    40 ns
    -
    85ns 40ns
    Single
    -
    High-Side
    N-Channel MOSFET
    160mA 240mA
    0.8V 2.2V
    -
    200V
    1.3mm
    2.9mm
    1.6mm
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    BUFFER OR INVERTER BASED MOSFET DRIVER
    -
    -
    -
    µHVIC™
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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