Infineon Technologies IRLR024NTRRPBF
- Part Number:
- IRLR024NTRRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2487325-IRLR024NTRRPBF
- Description:
- MOSFET N-CH 55V 17A DPAK
- Datasheet:
- IRLR024NTRRPBF
Infineon Technologies IRLR024NTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR024NTRRPBF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2000
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max45W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs65m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds480pF @ 25V
- Current - Continuous Drain (Id) @ 25°C17A Tc
- Gate Charge (Qg) (Max) @ Vgs15nC @ 5V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±16V
- JEDEC-95 CodeTO-252AA
- Drain Current-Max (Abs) (ID)17A
- Drain-source On Resistance-Max0.08Ohm
- Pulsed Drain Current-Max (IDM)72A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)68 mJ
- RoHS StatusROHS3 Compliant
IRLR024NTRRPBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 68 mJ.A device's maximal input capacitance is 480pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 17A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 72A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 55V.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 10V).
IRLR024NTRRPBF Features
the avalanche energy rating (Eas) is 68 mJ
based on its rated peak drain current 72A.
a 55V drain to source voltage (Vdss)
IRLR024NTRRPBF Applications
There are a lot of Infineon Technologies
IRLR024NTRRPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 68 mJ.A device's maximal input capacitance is 480pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 17A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 72A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 55V.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 10V).
IRLR024NTRRPBF Features
the avalanche energy rating (Eas) is 68 mJ
based on its rated peak drain current 72A.
a 55V drain to source voltage (Vdss)
IRLR024NTRRPBF Applications
There are a lot of Infineon Technologies
IRLR024NTRRPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRLR024NTRRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
08 April 2024
STM32F103RET6: Everything You Need to Know For Your Project
Ⅰ. Overview of STM32F103RET6Ⅱ. Importance of STM32F103RET6 in the field of technologyⅢ. Specifications of STM32F103RET6Ⅳ. The practical application of STM32F103RET6Ⅴ. Electrical characteristics of STM32F103RET6Ⅵ. How to use STM32F103RET6?Ⅶ.... -
09 April 2024
TPS82085SILR Characteristics, Specifications, Application Cases and More
Ⅰ. What is TPS82085SILR?Ⅱ. Characteristics of TPS82085SILRⅢ. Device functional modesⅣ. Specifications of TPS82085SILRⅤ. Thermal consideration of TPS82085SILRⅥ. What advanced technologies does TPS82085SILR use?Ⅶ. Competitive product analysis of TPS82085SILRⅧ.... -
09 April 2024
INA826AIDR Layout and Selection Guide
Ⅰ. Description of INA826AIDRⅡ. Pin configuration and functionsⅢ. Functional features of INA826AIDRⅣ. What impact does external resistance have on the stability of INA826AIDR?Ⅴ. Schematic diagram and working principle... -
10 April 2024
LM2904DT Dual Operational Amplifier: Features, Package and Specifications
Ⅰ. Overview of LM2904DTⅡ. Electrical characteristic curvesⅢ. Features of LM2904DTⅣ. Package of LM2904DTⅤ. Supply voltage and current requirements of LM2904DTⅥ. Specifications of LM2904DTⅦ. How to use LM2904DT in...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.