Vishay Siliconix IRLD024PBF
- Part Number:
- IRLD024PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478287-IRLD024PBF
- Description:
- MOSFET N-CH 60V 2.5A 4-DIP
- Datasheet:
- IRLD024PBF
Vishay Siliconix IRLD024PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLD024PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance100mOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating2.5A
- Number of Elements1
- Power Dissipation-Max1.3W Ta
- Element ConfigurationSingle
- Power Dissipation1.3W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs100mOhm @ 1.5A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.5A Ta
- Gate Charge (Qg) (Max) @ Vgs18nC @ 5V
- Rise Time110ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)110 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)2.5A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage60V
- Input Capacitance870pF
- Recovery Time260 ns
- Drain to Source Resistance100mOhm
- Rds On Max100 mΩ
- Height3.37mm
- Length5mm
- Width6.29mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLD024PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 870pF @ 25V.This device conducts a continuous drain current (ID) of 2.5A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 100mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLD024PBF Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a threshold voltage of 2V
a 60V drain to source voltage (Vdss)
IRLD024PBF Applications
There are a lot of Vishay Siliconix
IRLD024PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 870pF @ 25V.This device conducts a continuous drain current (ID) of 2.5A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 100mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLD024PBF Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 100mOhm
a threshold voltage of 2V
a 60V drain to source voltage (Vdss)
IRLD024PBF Applications
There are a lot of Vishay Siliconix
IRLD024PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRLD024PBF More Descriptions
Single N-Channel 60 V 0.1 Ohms Through Hole Power Mosfet - HVMDIP-4
Transistor MOSFET N-CH 60V 2.5A 4-Pin HVMDIP
Transistor: unipolar, N-MOSFET; 60V; 2.5A; 1.3W; DIP4
MOSFET N-CH 60V 2.5A 4-DIP | Siliconix / Vishay IRLD024PBF
N Channel Mosfet, 60V, 2.5A, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.5A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
MOSFET, N, LOGIC, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; Device Marking:IRLD024PBF; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Pulse Current Idm:20A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V
Transistor MOSFET N-CH 60V 2.5A 4-Pin HVMDIP
Transistor: unipolar, N-MOSFET; 60V; 2.5A; 1.3W; DIP4
MOSFET N-CH 60V 2.5A 4-DIP | Siliconix / Vishay IRLD024PBF
N Channel Mosfet, 60V, 2.5A, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.5A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
MOSFET, N, LOGIC, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; Device Marking:IRLD024PBF; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Pulse Current Idm:20A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V
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