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IRL540NPBF

Infineon Technologies IRL540NPBF

Part Number:
IRL540NPBF
Manufacturer:
Infineon Technologies
Ventron No:
2479818-IRL540NPBF
Description:
MOSFET N-CH 100V 36A TO-220AB
ECAD Model:
Datasheet:
IRL540NPBF

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Specifications
Infineon Technologies IRL540NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL540NPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    1998
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Resistance
    53mOhm
  • Terminal Finish
    MATTE TIN OVER NICKEL
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    250
  • Current Rating
    36A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Lead Pitch
    2.54mm
  • Number of Elements
    1
  • Power Dissipation-Max
    140W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    140W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    44m Ω @ 18A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1800pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    36A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    74nC @ 5V
  • Rise Time
    81ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    62 ns
  • Turn-Off Delay Time
    39 ns
  • Continuous Drain Current (ID)
    36A
  • Threshold Voltage
    2V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    100V
  • Dual Supply Voltage
    100V
  • Recovery Time
    290 ns
  • Nominal Vgs
    2 V
  • Height
    15.24mm
  • Length
    10.5156mm
  • Width
    4.69mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRL540NPBF Description The IRL540NPBF is an N-channel HEXFET? Power MOSFET with a low on-resistance per silicon area and quick switching performance. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.
IRL540NPBF Features Dynamic dv/dt rating
Fully avalanche rated
Logic-level gate drive
Advanced process technology
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry-standard through-hole power package
High-current rating
IRL540NPBF Applications Power Management
DC motors
Inverters
SMPS
lighting
load switches as well as battery-powered applications
IRL540NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 36A;TO-220AB;PD 140W;VGS /-16V
Transistor NPN Field Effect IRL540/IRL540N INTERNATIONAL RECTIFIER Ampere=30 V=100 TO220
MOSFET, 100V, 36A, 44 MOHM, 49.3 NC QG, LOGIC LEVEL, TO-220A
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 100 V 0.063 Ohm 74 nC HEXFET® Power Mosfet - TO-220-3
Transistor MOSFET N-Ch. 36A/100V TO220 IRL 540 NPBF
Trans MOSFET N-CH 100V 36A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
N Channel Mosfet, 100V, 36A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: Yes |Infineon IRL540NPBF.
MOSFET, N, 100V, 36A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):44mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:94W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:36A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:94W; Power Dissipation Pd:94W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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