IRL2703PBF

Infineon Technologies IRL2703PBF

Part Number:
IRL2703PBF
Manufacturer:
Infineon Technologies
Ventron No:
2849371-IRL2703PBF
Description:
MOSFET N-CH 30V 24A TO-220AB
ECAD Model:
Datasheet:
IRL2703PBF

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Specifications
Infineon Technologies IRL2703PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL2703PBF.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Resistance
    40MOhm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    250
  • Current Rating
    24A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Power Dissipation-Max
    45W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    45W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 14A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    450pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    24A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 4.5V
  • Rise Time
    140ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    24A
  • Threshold Voltage
    1V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    96A
  • Dual Supply Voltage
    30V
  • Avalanche Energy Rating (Eas)
    77 mJ
  • Recovery Time
    97 ns
  • Nominal Vgs
    1 V
  • Height
    8.77mm
  • Length
    10.5156mm
  • Width
    4.69mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRL2703PBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 77 mJ.A device's maximum input capacitance is 450pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 12 ns.Its maximum pulsed drain current is 96A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

IRL2703PBF Features
the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 96A.
a threshold voltage of 1V


IRL2703PBF Applications
There are a lot of Infineon Technologies
IRL2703PBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRL2703PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.04Ohm;ID 24A;TO-220AB;PD 45W;VGS /-16V
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 30 V 0.06 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 30V 24A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 45 W
Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 30V, 24A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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