Infineon Technologies IRL2703PBF
- Part Number:
- IRL2703PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849371-IRL2703PBF
- Description:
- MOSFET N-CH 30V 24A TO-220AB
- Datasheet:
- IRL2703PBF
Infineon Technologies IRL2703PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL2703PBF.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance40MOhm
- Additional FeatureLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)250
- Current Rating24A
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Power Dissipation-Max45W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation45W
- Case ConnectionDRAIN
- Turn On Delay Time8.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs40m Ω @ 14A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds450pF @ 25V
- Current - Continuous Drain (Id) @ 25°C24A Tc
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- Rise Time140ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)24A
- Threshold Voltage1V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)96A
- Dual Supply Voltage30V
- Avalanche Energy Rating (Eas)77 mJ
- Recovery Time97 ns
- Nominal Vgs1 V
- Height8.77mm
- Length10.5156mm
- Width4.69mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRL2703PBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 77 mJ.A device's maximum input capacitance is 450pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 12 ns.Its maximum pulsed drain current is 96A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRL2703PBF Features
the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 96A.
a threshold voltage of 1V
IRL2703PBF Applications
There are a lot of Infineon Technologies
IRL2703PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 77 mJ.A device's maximum input capacitance is 450pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 12 ns.Its maximum pulsed drain current is 96A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRL2703PBF Features
the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 96A.
a threshold voltage of 1V
IRL2703PBF Applications
There are a lot of Infineon Technologies
IRL2703PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRL2703PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.04Ohm;ID 24A;TO-220AB;PD 45W;VGS /-16V
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 30 V 0.06 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 30V 24A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 45 W
Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 30V, 24A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 30 V 0.06 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 30V 24A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 45 W
Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 30V, 24A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
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