Infineon Technologies IRG7T200HF12B

Name: IRG7T200HF12B
Brand: Infineon Technologies
SKU: 2854387-IRG7T200HF12B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG7T200HF12B

Manufacturer:: Infineon Technologies

Ventron No:: 2854387-IRG7T200HF12B

Description:: MOD IGBT 1200V 200A POWIR 62

ECAD Model:

Datasheet:: IRG7T200HF12B

Specifications

Infineon Technologies IRG7T200HF12B technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG7T200HF12B.

Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 62 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.06kW
Configuration
Half Bridge
Power - Max
1060W
Input
Standard
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
400A
Current - Collector Cutoff (Max)
2mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
22.4nF
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 200A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
22.4nF @ 25V
RoHS Status
RoHS Compliant

Description

IRG7T200HF12B Description
IRG7T200HF12B is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. IRG7T200HF12B operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 400A. The IRG7T200HF12B has 3 pins and it is available in Module packaging way. IRG7T200HF12B has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

IRG7T200HF12B Features
Input Capacitance (Cies) @ Vce: 22.4nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max): 1200V
Collector Emitter Voltage (VCEO): 2.2V
Collector Emitter Breakdown Voltage: 1.2kV

IRG7T200HF12B Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRG7T200HF12B More Descriptions

MOD IGBT 1200V 200A POWIR 62
CAP CER 3PF 50V C0G/NP0 RADIAL

Certification