IRFZ46NPBF

Infineon Technologies IRFZ46NPBF

Part Number:
IRFZ46NPBF
Manufacturer:
Infineon Technologies
Ventron No:
3070200-IRFZ46NPBF
Description:
MOSFET N-CH 55V 53A TO-220AB
ECAD Model:
Datasheet:
IRFZ46NPBF

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Specifications
Infineon Technologies IRFZ46NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ46NPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2002
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    250
  • Current Rating
    53A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Qualification Status
    Not Qualified
  • Lead Pitch
    2.54mm
  • Number of Elements
    1
  • Voltage
    55V
  • Power Dissipation-Max
    107W Tc
  • Element Configuration
    Single
  • Current
    40A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    88W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    16.5m Ω @ 28A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1696pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    53A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    72nC @ 10V
  • Rise Time
    76ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    57 ns
  • Turn-Off Delay Time
    52 ns
  • Continuous Drain Current (ID)
    53A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    55V
  • Dual Supply Voltage
    55V
  • Recovery Time
    101 ns
  • Nominal Vgs
    4 V
  • Height
    8.77mm
  • Length
    10.54mm
  • Width
    4.69mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRFZ46NPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1696pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 53A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [52 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFZ46NPBF Features
a continuous drain current (ID) of 53A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 52 ns
a threshold voltage of 4V


IRFZ46NPBF Applications
There are a lot of Infineon Technologies
IRFZ46NPBF applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRFZ46NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de
Single N-Channel 55 V 16.5 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 46A/55V TO220 IRFZ 46 N PBF
Trans MOSFET N-CH 55V 53A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Transistor IRFZ46N MOSFET N-Channel 55V 28A TO-220
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 107 W
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 55V, 53A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:53A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFZ46NPBF.
MOSFET, N, 55V, 46A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:46A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:88W; Power, Pd:88W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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