Infineon Technologies IRFZ46NPBF
- Part Number:
- IRFZ46NPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070200-IRFZ46NPBF
- Description:
- MOSFET N-CH 55V 53A TO-220AB
- Datasheet:
- IRFZ46NPBF
Infineon Technologies IRFZ46NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ46NPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2002
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)250
- Current Rating53A
- Time@Peak Reflow Temperature-Max (s)30
- Qualification StatusNot Qualified
- Lead Pitch2.54mm
- Number of Elements1
- Voltage55V
- Power Dissipation-Max107W Tc
- Element ConfigurationSingle
- Current40A
- Operating ModeENHANCEMENT MODE
- Power Dissipation88W
- Case ConnectionDRAIN
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs16.5m Ω @ 28A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1696pF @ 25V
- Current - Continuous Drain (Id) @ 25°C53A Tc
- Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
- Rise Time76ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)57 ns
- Turn-Off Delay Time52 ns
- Continuous Drain Current (ID)53A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage55V
- Dual Supply Voltage55V
- Recovery Time101 ns
- Nominal Vgs4 V
- Height8.77mm
- Length10.54mm
- Width4.69mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IRFZ46NPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1696pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 53A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [52 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFZ46NPBF Features
a continuous drain current (ID) of 53A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 52 ns
a threshold voltage of 4V
IRFZ46NPBF Applications
There are a lot of Infineon Technologies
IRFZ46NPBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1696pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 53A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [52 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFZ46NPBF Features
a continuous drain current (ID) of 53A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 52 ns
a threshold voltage of 4V
IRFZ46NPBF Applications
There are a lot of Infineon Technologies
IRFZ46NPBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRFZ46NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de
Single N-Channel 55 V 16.5 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 46A/55V TO220 IRFZ 46 N PBF
Trans MOSFET N-CH 55V 53A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Transistor IRFZ46N MOSFET N-Channel 55V 28A TO-220
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 107 W
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 55V, 53A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:53A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFZ46NPBF.
MOSFET, N, 55V, 46A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:46A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:88W; Power, Pd:88W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V
Single N-Channel 55 V 16.5 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 46A/55V TO220 IRFZ 46 N PBF
Trans MOSFET N-CH 55V 53A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Transistor IRFZ46N MOSFET N-Channel 55V 28A TO-220
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 107 W
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 55V, 53A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:53A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFZ46NPBF.
MOSFET, N, 55V, 46A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:46A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:88W; Power, Pd:88W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V
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