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IRFU9120NPBF

Infineon Technologies IRFU9120NPBF

Part Number:
IRFU9120NPBF
Manufacturer:
Infineon Technologies
Ventron No:
3813881-IRFU9120NPBF
Description:
MOSFET P-CH 100V 6.6A I-PAK
ECAD Model:
Datasheet:
IRFU9120NPBF

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Specifications
Infineon Technologies IRFU9120NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFU9120NPBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    1998
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    480MOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -100V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -6.6A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Power Dissipation-Max
    40W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    39W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    480m Ω @ 3.9A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    6.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • Rise Time
    47ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    31 ns
  • Turn-Off Delay Time
    28 ns
  • Continuous Drain Current (ID)
    -6.6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    6.5A
  • Drain to Source Breakdown Voltage
    -100V
  • Pulsed Drain Current-Max (IDM)
    26A
  • Dual Supply Voltage
    -100V
  • Nominal Vgs
    -4 V
  • Height
    6.22mm
  • Length
    6.7056mm
  • Width
    2.3876mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRFU9120NPBF Description
IRFU9120NPBF is a -100v HEXFET? Power MOSFET. The HEXFET IRFU9120NPBF from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRFU9120NPBF Features
Ultra Low On-Resistance
P-Channel
Straight Lead (IRFU9120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free

IRFU9120NPBF Applications
DC motor drive
High efficiency synchronous rectification in SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits
IRFU9120NPBF More Descriptions
IRFU9120NPBF P-channel MOSFET Transistor, 6.6 A, 100 V, 3-Pin IPAK
-100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, -100V, -6.6A, I-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:-6.6A; Junction to Case Thermal Resistance A:3.2°C/W; On State resistance @ Vgs = 10V:480ohm; Package / Case:IPAK; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:26A; Termination Type:Through Hole; Turn Off Time:31ns; Turn On Time:47ns; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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